US4772370A
Expired / Lapsed
US
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Process for producing icosahedral materials
Assignee: United States, COMMERCE THE, Secretary of
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Filing: 1987-06-23
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Granted: 1988-09-20
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Expires: 2007-06-23
Abstract
Abstract A method for producing quasi-crystalline films by direct vapor deposition through sputtering is provided. The method is applicable to all alloys which can be converted to quasi-crystalline structure by melt spinning.
Inventors
- 👤 Kenneth G. Kreider
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:10
CPC Classifications
C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/52
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
59 words
A method for producing icosahedral material comprising the steps of: vacuum sputtering, onto a substrate, a depositing species of an alloy, which can be used to produce an icosahedral structure by melt spinning, at sputtering conditions to form said icosahedral material as a film onto said substrate, said sputtering occurring in an atmosphere consisting essentially of a noble gas.
Claim 2
Independent Claim
59 words
A method for producing icosahedral material comprising the steps of: vacuum sputtering, onto a substrate, a depositing species of an alloy, which can be used to produce an icosahedral structure by melt spinning, at sputtering conditions to form said icosahedral material as a film onto said substrate, said sputtering occurring in an atmosphere consisting essentially of a noble gas.
Claim 3
Dependent Claim
10 words
The method of claim 1, wherein said alloy comprises aluminum.
Claim 4
Dependent Claim
27 words
The method of claim 2, wherein said sputtering occurs at a rate of deposition of said alloy on said substrate from about 0.1 to about 1.0 nm/s.
Claim 5
Dependent Claim
22 words
The method of claim 3, wherein said substrate is selected from the group consisting of metal oxides, silicon oxide and ionic crystals.
Claim 6
Dependent Claim
13 words
The method of claim 4, wherein said alloy further comprises a transition metal.
Claim 7
Dependent Claim
20 words
The method of claim 5, wherein said sputtering conditions comprise a substrate temperature from about 200° to about 450° C.
Claim 8
Dependent Claim
13 words
The method of claim 6, wherein said noble gas consists essentially of argon.
Claim 9
Dependent Claim
27 words
The method of claim 7, wherein said sputtering conditions comprise a rate of deposition of said alloy on said substrate from about 0.2 to about 0.3 nm/s.
Claim 10
Dependent Claim
38 words
The method of claim 8, wherein said alloy is selected from the group consisting of 30±1 weight percent manganese with a remainder being aluminum; and 34±1 weight percent manganese, 4±1/2 weight percent silicon with a remainder being aluminum.
Claim 11
Dependent Claim
20 words
The method of claim 9, wherein said sputtering conditions comprise a substrate temperature from about 350° to about 400° C.
Claim 12
Dependent Claim
18 words
The method of claim 10, wherein said sputtering occurs at a pressure of at most about 3.0 Pascals.
Claim 13
Dependent Claim
28 words
The method of claim 11, wherein said substrate is selected from the group consisting of NaCl, soda lime silicate glass, fused quartz, and Al 2 O 3 .
Claim 14
Dependent Claim
18 words
The method of claim 12, wherein said sputtering occurs at a pressure of at most about 0.3 Pascals.
Claim 15
Independent Claim
54 words
A method for producing icosahedral material from an alloy which can be used to produce an icosahedral structure by melt spinning, the improvement comprising vacuum sputtering said alloy onto a substrate in an atmosphere consisting essentially of a noble gas at sputtering conditions to produce said icosahedral material as a film on said substrate.
Claim 16
Independent Claim
54 words
A method for producing icosahedral material from an alloy which can be used to produce an icosahedral structure by melt spinning, the improvement comprising vacuum sputtering said alloy onto a substrate in an atmosphere consisting essentially of a noble gas at sputtering conditions to produce said icosahedral material as a film on said substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |