Semiconductor pressure sensor

Claim 2

A semiconductor pressure sensor comprising: a semiconductor substrate; an insulating diaphragm film which is made of an etching-resistant material and is provided on the main surface of said semiconductor substrate; at least one etching hole provided such as to penetrate through said diaphragm film and to reach said semiconductor substrate; a reference pressure chamber formed by etching through said etching hole to remove a part of said substrate; a sealing member for sealing at least one etching hole; and at least one strain gage disposed at a predetermined position in a pressure receiving region of said diaphragm film, so that a pressure is detected on the basis of an output signal from said strain gage.

Claim 3

A semiconductor pressure sensor according to claim 1, wherein the main surface of said semiconductor substrate which is provided with said diaphragm film and said strain gage is coated with an insulating protective film composed of an etching-resistant material, and a detection signal of said strain gage is output through a plurality of electrodes which are connected to both ends of said strain gage.

Claim 4

A semiconductor pressure sensor according to claim 1, wherein said diaphragm film is composed of one selected from a silicon nitride film and a multi-layered film containing at least said silicon nitride film.

Claim 5

A semiconductor pressure sensor according to claim 1, wherein said etching hole is sealed by said sealing member while said reference pressure chamber is maintained in a vacuum state so as to measure an absolute pressure applied from the top side of said diaphragm film.

Claim 6

A semiconductor pressure sensor according to claim 1, wherein a plurality of said etching holes are provided, some of said holes being sealed by said sealing member and others being left open; and means for introducing a second pressure to said reference pressure chamber is provided at said open etching holes, whereby difference between a first pressure applied to the top side of said diaphragm film and said second pressure applied to the back side of said diaphragm is measured.

Claim 7

A semiconductor pressure sensor according to claim 1, wherein the main surface of said semiconductor substrate is provided with a predetermined signal processing circuit, a plurality of electrodes for inputting/outputting for said signal processing circuit and said strain gage, and a plurality of leads for connecting said strain gage and said signal processing circuit through said electrodes.

Claim 8

A semiconductor pressure sensor according to claim 1, wherein said strain gage includes a pair of strain gage members which are provided substantially symmetrically in the central portion of said pressure receiving region of said diaphragm film; and a pair of strain gage members which are provided substantially symmetrically in the peripheral portion of said pressure receiving region; said two pairs of strain gage members being so designed that when compression is applied to one of said pairs, tension is applied to the other pair, so as to constitute a bridge circuit which outputs a voltage which is proportional to the pressure applied to said diaphragm film.

Claim 9

A pressure distribution detecting apparatus comprising: a semiconductor substrate; a plurality of semiconductor pressure sensors which are arrayed on the same substrate as said semiconductor substrate in a matrix; and a sensor scanning means for subsequently scanning each of said semiconductor pressure sensors and detecting an output signal thereof; each semiconductor pressure sensor including an insulating diaphragm film which is made of an etching-resistant material and is formed on the main surface of said semiconductor substrate such as to cover the main surface, at least one strain gage which is provided at a predetermined position in a pressure receiving region of said diaphragm film, an insulating protective film which is made of an etching-resistant material and is formed on said strain gage and said diaphragm film such as to cover the diaphragm film, at least one etching hole which is formed such as to penetrate through said insulating protective film and said diaphragm film, and a reference pressure chamber which is formed by etching and removing a part of said semiconductor substrate through said etching hole, whereby the distribution of the pressure applied to each of said semiconductor pressure sensors which are arrayed in a matrix is measured.

Claim 10

A pressure distribution detecting apparatus comprising: a semiconductor substrate; a plurality of semiconductor pressure sensors which are arrayed on the same substrate as said semiconductor substrate in a matrix; and a sensor scanning means for subsequently scanning each of said semiconductor pressure sensors and detecting an output signal thereof; each semiconductor pressure sensor including an insulating diaphragm film which is made of an etching-resistant material and is formed on the main surface of said semiconductor substrate such as to cover the main surface, at least one strain gage which is provided at a predetermined position in a pressure receiving region of said diaphragm film, an insulating protective film which is made of an etching-resistant material and is formed on said strain gage and said diaphragm film such as to cover the diaphragm film, at least one etching hole which is formed such as to penetrate through said insulating protective film and said diaphragm film, and a reference pressure chamber which is formed by etching and removing a part of said semiconductor substrate through said etching hole, whereby the distribution of the pressure applied to each of said semiconductor pressure sensors which are arrayed in a matrix is measured.

Claim 11

A pressure distribution detecting apparatus according to claim 8, wherein said sensor scanning means subsequently scans each of said pressure sensors to connect the same to power source and detects the output signals of said pressure sensors.

Claim 12

A pressure distribution detecting apparatus according to claim 8, wherein said sensor scanning means is composed of MOS type field effect transistors.

Claim 13

A pressure distribution detecting apparatus according to claim 8, wherein said sensor scanning means includes a clock circuit, decoder, multiplexer, amplifier and A/D converter, and is provided on the same semiconductor substrate as that for said semiconductor pressure sensors.

Claim 14

A pressure distribution detecting apparatus according to claim 8, wherein each of said semiconductor pressure sensors is disposed between said semiconductor substrate and said diaphragm film along a predetermined position in said pressure receiving region of said semiconductor substrate and is coated with a disappearing film formed of an isotropic etching material.

Claim 15

A pressure distribution detecting apparatus according to claim 8, wherein each of said semiconductor pressure sensors which are arrayed in a matrix is so designed that the entirety of each of said etching holes is sealed by a sealing member while said reference pressure chamber is maintained in a vacuum state, whereby an absolute pressure applied from the top side of said diaphragm film is measured.

Claim 16

A pressure distribution detecting apparatus according to claim 8, wherein the under surface of said semiconductor substrate is adhered to a predetermined base; a planar elastic member is brought into contact with the main surface of said semiconductor substrate on which said sensor matrix is provided; and a pressure is applied to said elastic member, whereby the distribution of the applied pressures is transmitted to said sensor matrix as it is for detection of pressure distribution.

Claim 17

A pressure distribution detecting apparatus according to claim 8, wherein the under surface of said semiconductor substrate is adhered to a predetermined base; a cap in which a plurality of through holes are opened is brought into contact with the main surface of said semiconductor substrate on which said sensor matrix is provided; and an elastic member is injected into each of said through holes for transmitting a pressure applied from the top side to the corresponding sensor; whereby, when a pressure is applied to the top side, the distribution of the applied pressures is transmitted to the corresponding sensor as it is through each of said elastic members for detection of pressure distribution.