Abstract A semiconductor laser apparatus comprising a laser-oscillating area and a light-detecting area, both of which are formed on a single substrate, wherein said laser-oscillating area and said light-detecting area have a common semiconductor layer with a first polarity disposed on said substrate and a common active layer disposed on said semiconductor layer, and said layer-oscillating area of said laser-oscillating area and/or said light-detecting area has a cladding layer with a second polarity disposed on said active layer, said laser-oscillating area and said light-detecting area being separated by a groove formed from the upper face of said cladding layer to the region below said active layer, and the active layer of said laser-oscillation area being flat while the active layer of said light-detecting area is sloped.
A semiconductor laser apparatus comprising a laser-oscillating area and a light-detecting area, both of which are formed on a single substrate, wherein said laser-oscillating area and said light-detecting area have a common semiconductor layer with a first conductivity type disposed on said substrate and a common active layer disposed on said semiconductor layer, and said laser-oscillating area has a cladding layer with a second conductivity type disposed on said active layer, said laser-oscillating area and said light-detecting area being separated by a groove formed from the upper face of said cladding layer to the region below said active layer, and the active layer of said laser-oscillating area being flat while the active layer of said light-detecting area is sloped at least in a region of said light-detecting area.
Claim 2
Dependent Claim
128 words
A semiconductor laser apparatus comprising a laser-oscillating area and a light-detecting area, both of which are formed on a single substrate, wherein said laser-oscillating area and said light-detecting area have a common semiconductor layer with a first conductivity type disposed on said substrate and a common active layer disposed on said semiconductor layer, and said laser-oscillating area has a cladding layer with a second conductivity type disposed on said active layer, said laser-oscillating area and said light-detecting area being separated by a groove formed from the upper face of said cladding layer to the region below said active layer, and the active layer of said laser-oscillating area being flat while the active layer of said light-detecting area is sloped at least in a region of said light-detecting area.
Claim 3
Dependent Claim
50 words
A semiconductor laser apparatus according to claim 1, wherein said substrate is a terraced substrate, said laser-oscillating area being located in a first flat portion of said substrate and said light-detecting area being located in a terraced portion of said substrate having a sloped portion and a second flat portion.