US4769822A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Sharp Corp
•
Filing: 1986-09-23
•
Granted: 1988-09-06
•
Expires: 2006-09-23
Abstract
Abstract A semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets in the region, except for the region corresponding to said striped diffusion region, which is positioned at the interface between the optical guiding layer and the second cladding layer.
Inventors
- 👤 Takahiro Suyama
- 👤 Kohsei Takahashi
- 👤 Saburo Yamamoto
- 👤 Toshiro Hayakawa
- 👤 Masafumi Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 09:03
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/1237; H01S5/20; H01S5/2054; H01S5/2059; H01S5/22; H01S5/223; H01S5/2231; H01S5/30; H01S5/34; H01S5/3428
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
96 words
In a semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, the device wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets and positioned at the interface between said optical guiding layer and said second cladding layer, where said GaAs strips are absent beneath said striped diffusion region.
Claim 2
Dependent Claim
96 words
In a semiconductor laser device comprising a laser oscillation-operating area containing a first cladding layer, an active layer, an optical guiding layer and a second cladding layer in that order, the device wherein a striped impurity-diffusion region is formed into said second cladding layer from one facet to the other facet and a plurality of narrow strips of GaAs with a spaced pitch are formed in parallel with both facets and positioned at the interface between said optical guiding layer and said second cladding layer, where said GaAs strips are absent beneath said striped diffusion region.
Claim 3
Dependent Claim
23 words
A semiconductor laser device according to claim 1, wherein said crystal layers are grown by molecular beam epitaxy or metal-organic chemical vapor deposition.
Claim 4
Dependent Claim
23 words
A semicondcutor laser device according to claim 1, wherein said active layer is of a single layered structure or a multi-quantum well structure.
Claim 5
Dependent Claim
23 words
A semiconductor laser device according to claim 2, wherein said active layer is of a single layered structure or a multi-quantum well structure.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-06 | 1992-03-07 | 1992-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-06 | 1996-03-07 | 1996-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-06 | 2000-03-07 | 2000-09-06 | $7700.00 | Window Closed / Lapsed |