← Back to Patent Explorer
US4768464A Expired / Lapsed US ⏱️ 0.0 years remaining

Chemical vapor reaction apparatus

Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1987-09-16
•
Granted: 1988-09-06
•
Expires: 2007-09-16
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An improved chemical vapor reaction system is described. The system is characterized by its light source which radiates ultraviolet light to a substrate to be processed. Before the light source, an obturating plate is placed so that the intensity of the light source is apparently reduced at the center position. With this light, the substrate is irradiated with light having uniform intensity over the surface of the substrate to be processed.

Inventors

  • 👤 Shigenori Hayashi
  • 👤 Naoki Hirose
  • 👤 Takashi Inujima
  • 👤 Kenji Ito

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 21:37
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/482

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 68 words
A chemical vapor reaction apparatus comprising: a reaction chamber; a reactive gas introducing system: a substrate holder for holding a substrate in said reaction chamber; an exhausing system; and a light source for irradiating said substrate, said apparatus characterized in that the radiation of light from said light source to said substrate has weaker intensity at the center position of said substrate than that of a peripheral position.
Claim 2
Dependent Claim 68 words
A chemical vapor reaction apparatus comprising: a reaction chamber; a reactive gas introducing system: a substrate holder for holding a substrate in said reaction chamber; an exhausing system; and a light source for irradiating said substrate, said apparatus characterized in that the radiation of light from said light source to said substrate has weaker intensity at the center position of said substrate than that of a peripheral position.
Claim 3
Dependent Claim 23 words
The appratus of claim 1 wherein said light source consists of at least one lamp which is positioned around a lamp-free center area.
Claim 4
Dependent Claim 13 words
The apparatus of claim 2 wherein said lamp source is a spiral lamp.
Claim 5
Dependent Claim 18 words
The apparatus of claim 1 further comprising an obturating plate before the center position of said light source.
Claim 6
Dependent Claim 22 words
The apparatus of claim 4 wherein said obturating plate has a profile similar to the surface to be processed by said appratus.
Claim 7
Dependent Claim 14 words
The apparatus of claim 4 wherein said obturating plate is made of a metal.
Claim 8
Dependent Claim 25 words
The apparatus of claim 6 wherein the area of said obturating plate is between 1/4 and 1/16 of the radiating area of said light source.
Claim 9
Dependent Claim 14 words
The apparatus of claim 1 wherein said apparatus is a chemical vapor deposition apparatus.
Claim 10
Dependent Claim 12 words
The apparatus of claim 1 wherein said apparatus is an etching apparatus.
Claim 11
Dependent Claim 68 words
A chemical vapor reaction apparatus comprising: a reaction chamber; a reactive gas introducing system: a substrate holder for holding a substrate in said reaction chamber; an exhausting system; and a light source for irradiating said substrate, said apparatus characterized in that said light source is so constructed that its intensity at the center position is limited with reference to that at a position distant from the center position.
Claim 12
Dependent Claim 68 words
A chemical vapor reaction apparatus comprising: a reaction chamber; a reactive gas introducing system: a substrate holder for holding a substrate in said reaction chamber; an exhausting system; and a light source for irradiating said substrate, said apparatus characterized in that said light source is so constructed that its intensity at the center position is limited with reference to that at a position distant from the center position.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-09-06 1992-03-07 1992-09-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-09-06 1996-03-07 1996-09-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-09-06 2000-03-07 2000-09-06 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag