US4766085A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing contact type one-dimensional image sensor
Assignee: Sharp Corp
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Filing: 1986-08-07
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Granted: 1988-08-23
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Expires: 2006-08-07
Abstract
Abstract A method for manufacturing a contact type one-dimensional image sensor, which includes the step of providing a light receiving element portion composed of one or more of Group II-VI compounds semiconductor containing Cd on a substrate, and also providing a matrix wiring portion on the same substrate as that of the light receiving element portion, and the method is characterized by the step of forming an insulating layer for the formation of the matrix wiring portion in such a manner as to cover the light receiving element portion.
Inventors
- 👤 Satoshi Nishigaki
- 👤 Ryusuke Kita
- 👤 Shuhei Tsuchimoto
- 👤 Akiteru Rai
- 👤 Masaru Iwasaki
- 👤 Yuzi Matsuda
- 👤 Takashi Nukii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:58
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H04; H04N; H04N1/00; H04N1/04; H04N1/19; H04N1/191; H04N1/192; H04N1/193; H04N1/1931; H10F39/011; H10F39/022; H10F39/198
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
77 words
A method of manufacturing a contact type one-dimensional image sensor comprising the steps of: providing on a substrate a light receiving element portion composed of at least one Group II-VI compound semiconductor containing Cd; providing a matrix wiring portion on the same substrate in communication with said light receiving element portion; and forming an insulating layer over said substrate and said matrix wiring portion in such a manner as to also cover said light receiving element portion.
Claim 2
Independent Claim
77 words
A method of manufacturing a contact type one-dimensional image sensor comprising the steps of: providing on a substrate a light receiving element portion composed of at least one Group II-VI compound semiconductor containing Cd; providing a matrix wiring portion on the same substrate in communication with said light receiving element portion; and forming an insulating layer over said substrate and said matrix wiring portion in such a manner as to also cover said light receiving element portion.
Claim 3
Dependent Claim
83 words
A method as claimed in claim 1, wherein said light receiving element portion is formed by the steps of: applying onto the substrate, a material in a paste-like form prepared by adding a powder of said compound semiconductor, one or more kinds of a halogen compound of Cd as a flux and/or a low melting point glass frit dispersed in an organic binder; and subjecting said material to a heat treatment in an inert gas atmosphere at temperatures of 400° to 600° C.
Claim 4
Dependent Claim
15 words
A method as claimed in claim 1, wherein said insulating layer comprises a polymer film.
Claim 5
Dependent Claim
30 words
A method as claimed in claim 1, wherein said light receiving element portion includes an electrode portion continuously formed with a lower layer electrode portion of said matrix wiring portion.
Claim 6
Dependent Claim
21 words
The method as claimed in claim 1 further comprising the step of: forming another matrix wiring portion over said insulating layer.
Claim 7
Dependent Claim
21 words
The method as claimed in claim 5, wherein said matrix wiring portions are interconnected through via-holes etched in said insulating layer.
Claim 8
Dependent Claim
21 words
The method as claimed in claim 6, wherein said insulating layer protects said light receiving element portion from damage during etching.
Claim 9
Dependent Claim
21 words
The method as claimed in claim 1, wherein said matrix wiring portion is in contact with said light receiving element portion.
Claim 10
Independent Claim
87 words
A method of forming a coplanar contact type image sensor module substrate comprising the steps of: forming a photoconductor layer and a lower wiring on a substrate; coating an insulating layer over the lower wiring, with said insulating layer being retained at a semi-cured state; etching said insulating layer in said semi-cured state to effect a via-hole formation; subsequently completing the curing of said insulating layer; and forming an upper wiring on said insulating layer so as to establish contact with said lower wiring through said via-holes.
Claim 11
Independent Claim
87 words
A method of forming a coplanar contact type image sensor module substrate comprising the steps of: forming a photoconductor layer and a lower wiring on a substrate; coating an insulating layer over the lower wiring, with said insulating layer being retained at a semi-cured state; etching said insulating layer in said semi-cured state to effect a via-hole formation; subsequently completing the curing of said insulating layer; and forming an upper wiring on said insulating layer so as to establish contact with said lower wiring through said via-holes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-08-23 | 1992-02-22 | 1992-08-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-08-23 | 1996-02-22 | 1996-08-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-08-23 | 2000-02-22 | 2000-08-23 | $7700.00 | Window Closed / Lapsed |