Electron beam memory system with improved high rate digital beam pulsing system

Claim 2

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying between said tip and said anode means a predetermined accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means for developing a series of voltage pulses of predetermined magnitude and duration, and means for applying said pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance different from said first focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focus lens means and said recording medium.

Claim 3

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium, said medium having a melting characteristic which is such that when said medium is bombarded by an electron beam having a current density exceeding a predetermined melting threshold, melting of the medium occurs; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying between said tip and said anode means a predetermined accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means for developing a series of voltage pulses of predetermined magnitude and duration, and means for applying said pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance different from said first focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focus lens means and said recording medium, the said current density of said electron beam and the said magnitude of said voltage pulses being such that when said beam is focused on said medium, said melting threshold is exceeded and melting of said medium occurs, but when said beam is focused at the other of said focal distances and is thus out of focus with respect to said medium, said threshold is not reached and melting of said medium does not occur.

Claim 4

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium, said medium having a melting characteristic which is such that when said medium is bombarded by an electron beam having a current density exceeding a predetermined melting threshold, melting of the medium occurs; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying between said tip and said anode means a predetermined accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means for developing a series of voltage pulses of predetermined magnitude and duration, and means for applying said pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance different from said first focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focus lens means and said recording medium, the said current density of said electron beam and the said magnitude of said voltage pulses being such that when said beam is focused on said medium, said melting threshold is exceeded and melting of said medium occurs, but when said beam is focused at the other of said focal distances and is thus out of focus with respect to said medium, said threshold is not reached and melting of said medium does not occur.

Claim 5

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium, said medium having a melting characteristic which is such that when said medium is bombarded by an electron beam having a current density exceeding a predetermined melting threshold, melting of the medium occurs; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, high voltage supply means for developing and applying to said tip a predetermined accelerating potential which is negative relative to said anode medium for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, said supply means having an electrically conductive housing, means for applying said negative accelerating potential to said supply housing, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means for developing a series of voltage pulses of predetermined magnitude and duration, and means for applying said pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance different from said first focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focal lens means and said recording medium, the said current density of said electron beam and the said magnitude of said voltage pulses being such that when said beam is focused on said medium, said melting threshold is exceeded and melting of said medium occurs, but when said beam is focused at the other of said focal distances and is thus out of focus with respect to said medium, said threshold is not reached and melting of said medium does not occur, the application of said negative accelerating potential to both said tip and said supply housing reducing the capacity therebetwen and thus making possible a faster pulse rate.

Claim 6

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium, said medium having a melting characteristic which is such that when said medium is bombarded by an electron beam having a current density exceeding a predetermined melting threshold, melting of the medium occurs; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, high voltage supply means for developing and applying to said tip a predetermined accelerating potential which is negative relative to said anode medium for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, said supply means having an electrically conductive housing, means for applying said negative accelerating potential to said supply housing, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means for developing a series of voltage pulses of predetermined magnitude and duration, and means for applying said pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance different from said first focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focal lens means and said recording medium, the said current density of said electron beam and the said magnitude of said voltage pulses being such that when said beam is focused on said medium, said melting threshold is exceeded and melting of said medium occurs, but when said beam is focused at the other of said focal distances and is thus out of focus with respect to said medium, said threshold is not reached and melting of said medium does not occur, the application of said negative accelerating potential to both said tip and said supply housing reducing the capacity therebetwen and thus making possible a faster pulse rate.

Claim 7

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying between said tip and said anode means a predetermined relatively high accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means at a relatively low potential for developing a first series of pulses of predetermined magnitude and duration, and pulse-applying means for applying said first series of pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance different from said first focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focus lens and said recording medium, said pulse-applying means including voltage-to-lightwave transduction means at said relatively low potential responsive to said first series of pulses for converting said pulses to a corresponding lightwave signal, and lightwave-to-voltage transduction means at said relatively high potential and optically coupled to said voltage-to-lightwave transduction means for developing a second series of voltage pulses corresponding to said lightwave signal, whereby said first series of pulses are developed at said relatively low potential in electrical isolation from said accelerating potential.

Claim 8

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying between said tip and said anode means a predetermined relatively high accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means at a relatively low potential for developing a first series of pulses of predetermined magnitude and duration, and pulse-applying means for applying said first series of pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance different from said first focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focus lens and said recording medium, said pulse-applying means including voltage-to-lightwave transduction means at said relatively low potential responsive to said first series of pulses for converting said pulses to a corresponding lightwave signal, and lightwave-to-voltage transduction means at said relatively high potential and optically coupled to said voltage-to-lightwave transduction means for developing a second series of voltage pulses corresponding to said lightwave signal, whereby said first series of pulses are developed at said relatively low potential in electrical isolation from said accelerating potential.

Claim 9

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium, said medium having a melting characteristic which is such that when said medium is bombarded by an electron beam having a current density exceeding a predetermined melting threshold, melting of the medium occurs; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, high voltage supply means for developing and applying to said tip a predetermined relatively high accelerating potential which is negative relative to said anode means for forming a high brightness electron source at said tip and means for causing an electron beam to be formed through said anode means, said supply means having an electrically conductive housing, means for applying said negative accelerating potential to said supply housing, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means at a relatively low potential for developing a first series of pulses of predetermined magnitude and duration, and pulse-applying means for applying said first series of pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focal lens means and said recording medium, the said current density of said electron beam and the said magnitude of said voltage pulses being such that when said beam is focused on said medium, said melting threshold is exceeded and melting of said medium occurs, but when said beam is focused at the other of said focal distances and is thus out of focus with respect to said medium, said threshold is not reached and melting of said medium does not occur, the application of said negative accelerating potential to both said tip and said supply housing reducing the capacity therebetween and thus making possible a faster pulse rate, said pulse-applying means including voltage-to-lightwave transduction means at said relatively low potential responsive to said first series of pulses for converting said pulses to a corresponding lightwave signal, and lightwave-to-voltage transduction means at said relatively high potential but optically coupled to said voltage-to-lightwave transduction means for developing a second series of voltage pulses corresponding to said lightwave signal, whereby said first series of pulses are developed at said relatively low potential in electrical isolation from said accelerating potential.

Claim 10

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium, said medium having a melting characteristic which is such that when said medium is bombarded by an electron beam having a current density exceeding a predetermined melting threshold, melting of the medium occurs; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, high voltage supply means for developing and applying to said tip a predetermined relatively high accelerating potential which is negative relative to said anode means for forming a high brightness electron source at said tip and means for causing an electron beam to be formed through said anode means, said supply means having an electrically conductive housing, means for applying said negative accelerating potential to said supply housing, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe at a predetermined first focal distance therefrom; and a high rate digital beam pulsing system comprising: voltage pulse generating means at a relatively low potential for developing a first series of pulses of predetermined magnitude and duration, and pulse-applying means for applying said first series of pulses to said gun such that said pulses add to or subtract from said accelerating potential to thereby cause said focus lens means to focus said beam at a predetermined second focal distance, said gun being positioned relative to said recording medium such that one of said first and second focal distances corresponds to the distance between said focal lens means and said recording medium, the said current density of said electron beam and the said magnitude of said voltage pulses being such that when said beam is focused on said medium, said melting threshold is exceeded and melting of said medium occurs, but when said beam is focused at the other of said focal distances and is thus out of focus with respect to said medium, said threshold is not reached and melting of said medium does not occur, the application of said negative accelerating potential to both said tip and said supply housing reducing the capacity therebetween and thus making possible a faster pulse rate, said pulse-applying means including voltage-to-lightwave transduction means at said relatively low potential responsive to said first series of pulses for converting said pulses to a corresponding lightwave signal, and lightwave-to-voltage transduction means at said relatively high potential but optically coupled to said voltage-to-lightwave transduction means for developing a second series of voltage pulses corresponding to said lightwave signal, whereby said first series of pulses are developed at said relatively low potential in electrical isolation from said accelerating potential.

Claim 11

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying to said tip a predetermined relatively high negative accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe in the vicinity of said storage medium; a tip heater current source for developing and supplying a heater current for heating said tip; means for applying said accelerating potential to said current source; current level monitoring means for developing an electrical signal representative of the level of said heater current, including voltage-to-lightwave transduction means at said relatively high potential and responsive to said heater current for developing a lightwave signal representing the level of said heater current and lightwave-to-voltage transduction means at a relatively low potential and optically coupled to said voltage-to-lightwave transduction means for developing a current-responsive signal corresponding to said optical signal, whereby said current-representative signal is developed at said relatively low potential in electrical isolation from said heater current source at said accelerating potential.

Claim 12

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium; means for rotating said substrate; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying to said tip a predetermined relatively high negative accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe in the vicinity of said storage medium; a tip heater current source for developing and supplying a heater current for heating said tip; means for applying said accelerating potential to said current source; current level monitoring means for developing an electrical signal representative of the level of said heater current, including voltage-to-lightwave transduction means at said relatively high potential and responsive to said heater current for developing a lightwave signal representing the level of said heater current and lightwave-to-voltage transduction means at a relatively low potential and optically coupled to said voltage-to-lightwave transduction means for developing a current-responsive signal corresponding to said optical signal, whereby said current-representative signal is developed at said relatively low potential in electrical isolation from said heater current source at said accelerating potential.

Claim 13

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium; means for rotating said substance; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying to said tip a predetermined relatively high negative accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe in the vicinity of said storage medium; a tip heater current source for developing and supplying a heater current for heating said tip; means for applying said accelerating potential to said current source; current level monitoring means for developing an electrical signal representative of the level of said heater current, including voltage-to-lightwave transduction means at said relatively high potential and responsive to said heater current for developing a periodically fluctuating lightwave signal whose frequency represents the level of said heater current and lightwave-to-voltage transduction means at a relatively low potential and optically coupled to said voltage-to-lightwave transduction means for developing a heater-current-representative signal corresponding to said optical signal; means for developing a heater current stabilizing signal comprising: control signal generating means at said relatively low potential and responsive to said heater-current-representative signal for developing a current supply control signal, voltage-to-lightwave transduction means at said relatively low potential and responsive to said stabilizing signal for developing a periodically fluctuating lightwave signal whose frequency represents said control signal, and lightwave-to-voltage transduction means at said relatively high potential and optically coupled to said voltage-to-lightwave transduction means for developing a heater-current-stabilizing signal corresponding to said lightwave signal, and means for applying said stabilizing signal to said tip heater current source for stabilizing said source, whereby said control signal is developed at said relatively low potential in electrical isolation from said heater current source at said relatively high potential.

Claim 14

An electron beam memory system comprising: a substrate mounted for rotation and supporting an information storage medium; means for rotating said substance; an electron gun and means for effecting relative movement between said gun and said substrate, said electron gun comprising: a field emission cathode having an emitting tip, anode means, means for developing and applying to said tip a predetermined relatively high negative accelerating potential for forming a high brightness electron source at said tip and for causing an electron beam to be formed through said anode means, and focus lens means for receiving said beam and for forming a very small yet intense electron beam probe in the vicinity of said storage medium; a tip heater current source for developing and supplying a heater current for heating said tip; means for applying said accelerating potential to said current source; current level monitoring means for developing an electrical signal representative of the level of said heater current, including voltage-to-lightwave transduction means at said relatively high potential and responsive to said heater current for developing a periodically fluctuating lightwave signal whose frequency represents the level of said heater current and lightwave-to-voltage transduction means at a relatively low potential and optically coupled to said voltage-to-lightwave transduction means for developing a heater-current-representative signal corresponding to said optical signal; means for developing a heater current stabilizing signal comprising: control signal generating means at said relatively low potential and responsive to said heater-current-representative signal for developing a current supply control signal, voltage-to-lightwave transduction means at said relatively low potential and responsive to said stabilizing signal for developing a periodically fluctuating lightwave signal whose frequency represents said control signal, and lightwave-to-voltage transduction means at said relatively high potential and optically coupled to said voltage-to-lightwave transduction means for developing a heater-current-stabilizing signal corresponding to said lightwave signal, and means for applying said stabilizing signal to said tip heater current source for stabilizing said source, whereby said control signal is developed at said relatively low potential in electrical isolation from said heater current source at said relatively high potential.