Method of making photoelectric conversion device

Claim 1

A method of making a photoelectric conversion device in which a plurality n (where n is an integer layer than 2) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having an insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i and a second electrode F i on the non-single-crystal semiconductor laminate member Q i , the second electrode F j+1 of the semiconductor element U j+1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming on the substrate a first conductive layer; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer by using a first laser beam to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer to cover the first grooves G 1 to G n-1 and the first electrodes E 1 to E n , the non-single-crystal semiconductor laminate layer having at least a first non-single-crystal semiconductor layer having a P or N conductivity type, a second non-single-crystal semiconductor layer having I conductivity and a third non-single-crystal semiconductor layer having opposite conductivity type to the first non-single-crystal semiconductor layer; forming (n-1) sequentially arranged grooves O 1 to O n-1 in the non-single-crystal semiconductor laminate layer by using a second laser beam to form n sequentially arranged non-single-crystal semiconductor laminate member Q 1 to Q n extending on the first electrode E 1 to E n , respectively and to expose the first electrode E 1 to E n-1 to the outside through the grooves O 1 to O n-1 , respectively; forming a second conductive layer comprising a conductive metal oxide layer and which continuously extends on the non-single-crystal semiconductor laminate members Q 1 to Q n and extends into the grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 which are connected to the first electrodes E 1 to E n-1 through the grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H n-1 in at least the second conductive layer to form n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n-1 and opposing the first electrode electrode E 1 to E n-1 through the isolating portion H 1 to H n-1 , respectively, the second electrode F j+1 being connected to the first electrode E j through the coupling portion K j by the contact between the conductive metal oxide layer of the coupling portion K j and the first conductive layer of the first electrode E j ; and before or after the formation of the isolating portions H 1 to H n-1 selectively for annealing by light having a wavelength greater than 500 nm to the region between the first electrode E i and the second electrode F i of the non-single-crystal semiconductor laminate member Q i .

Claim 2

A method of making a photoelectric conversion device in which a plurality n (where n is an integer layer than 2) of semiconductor elements U 1 to U n are sequentially formed side by side on a substrate having an insulating surface and connected in series one after another, the semiconductor element U i (i=1, 2, . . . n) comprising a first electrode E i on the substrate, a non-single-crystal semiconductor laminate member Q i on the first electrode E i and a second electrode F i on the non-single-crystal semiconductor laminate member Q i , the second electrode F j+1 of the semiconductor element U j+1 (j=1, 2, . . . (n-1)) being connected via coupling portion K j to the first electrode E j , comprising the steps of: forming on the substrate a first conductive layer; forming (n-1) sequentially arranged first grooves G 1 to G n-1 in the first conductive layer by using a first laser beam to form therein n sequentially arranged first electrodes E 1 to E n separated by the first grooves G 1 to G n-1 , respectively; forming on the substrate a non-single-crystal semiconductor laminate layer to cover the first grooves G 1 to G n-1 and the first electrodes E 1 to E n , the non-single-crystal semiconductor laminate layer having at least a first non-single-crystal semiconductor layer having a P or N conductivity type, a second non-single-crystal semiconductor layer having I conductivity and a third non-single-crystal semiconductor layer having opposite conductivity type to the first non-single-crystal semiconductor layer; forming (n-1) sequentially arranged grooves O 1 to O n-1 in the non-single-crystal semiconductor laminate layer by using a second laser beam to form n sequentially arranged non-single-crystal semiconductor laminate member Q 1 to Q n extending on the first electrode E 1 to E n , respectively and to expose the first electrode E 1 to E n-1 to the outside through the grooves O 1 to O n-1 , respectively; forming a second conductive layer comprising a conductive metal oxide layer and which continuously extends on the non-single-crystal semiconductor laminate members Q 1 to Q n and extends into the grooves O 1 to O n-1 to provide coupling portions K 1 to K n-1 which are connected to the first electrodes E 1 to E n-1 through the grooves O 1 to O n-1 , respectively; and forming (n-1) sequentially arranged isolating portions H 1 to H n-1 in at least the second conductive layer to form n sequentially arranged second electrodes F 1 to F n separated by the isolating portions H 1 to H n-1 and opposing the first electrode electrode E 1 to E n-1 through the isolating portion H 1 to H n-1 , respectively, the second electrode F j+1 being connected to the first electrode E j through the coupling portion K j by the contact between the conductive metal oxide layer of the coupling portion K j and the first conductive layer of the first electrode E j ; and before or after the formation of the isolating portions H 1 to H n-1 selectively for annealing by light having a wavelength greater than 500 nm to the region between the first electrode E i and the second electrode F i of the non-single-crystal semiconductor laminate member Q i .