Abstract A method for generating patterned structures on a monolith substrate in micro-mechanics to permit the production of at least two successive structurings with the depths required in micro-mechanics. At least two different, selectively removable etching masks which are etchable by different etching agents are applied in sequence to the substrate. A first structuring or patterning step is then employed after the last etching mask has been generated. A further etching step occurs after the removal of the last etching mask through the use of the etching masks then remaining on the substrate. The removal of additional etching masks and generating further structuring steps are repeated until the number of etching steps that have been carried out is the same as the number of etching masks that had been originally present on the monolith substrate.
A method for generating patterned structures on a monolith substrate in micro-mechanics which comprises: providing a plurality of etching masks of different masking configurations in superimposed relation on said substrate, said masks being selectively etchable by different etchants, the first etching mask being composed of a titanium-gold alloy and the next succeeding mask being composed of a photoresist composition, structuring said substrate using the last mask to be applied by etching selected areas to a substantial depth, removing said last mask after said structuring, additionally structuring said substrate through the next to last mask to be applied by etching other selected areas to a different depth than in the original etching, and repeating the structuring and mask removals for each of the remaining masks.
Claim 2
Independent Claim
124 words
A method for generating patterned structures on a monolith substrate in micro-mechanics which comprises: providing a plurality of etching masks of different masking configurations in superimposed relation on said substrate, said masks being selectively etchable by different etchants, the first etching mask being composed of a titanium-gold alloy and the next succeeding mask being composed of a photoresist composition, structuring said substrate using the last mask to be applied by etching selected areas to a substantial depth, removing said last mask after said structuring, additionally structuring said substrate through the next to last mask to be applied by etching other selected areas to a different depth than in the original etching, and repeating the structuring and mask removals for each of the remaining masks.
Claim 3
Dependent Claim
18 words
A method acording to claim 1 wherein said plurality of masks consists of only two selectively etchable masks.
Claim 4
Dependent Claim
45 words
A method according to claim 1 which includes: forming a relatively deep hole in said substrate in a first etching of said substrate, and enlarging said relatively deep hole and forming an annular groove of lesser depth about said hole in a subsequent etching step.
Claim 5
Dependent Claim
36 words
A method according to claim 1 which includes the steps of: first etching an annular shape in said substrate and enlarging said shape and thinning the substrate within said annular shape in a subsequent etching step.
Claim 6
Dependent Claim
16 words
A method according to claim 1 wherein said etching is carried out by electrochemical fine etching.