Abstract A high-frequency oscillator having a high-frequency oscillation circuit formed through use of a microstripline. The high-frequency oscillation circuit has a resonator and a transistor connected to a reference potential and coupled with the resonator through a first capacitor. A first electrode of the transistor is connected with the resonator through the first capacitor. A second electrode of the transistor is connected to the reference potential and a third electrode thereof is adapted to derive an output. A substrate is provided with a land portion to be connected with the first electrode of the transistor, and a capacitor electrode is formed on the opposite surface of the substrate to be opposite to the first electrode connection land portion through the substrate. The capacitor electrode, the first electrode connection land portion and the substrate form a second capacitor, which is connected to the reference potential between the first capacitor and the first electrode of the transistor.
A high-frequency oscillator comprising: a dielectric substrate having formed on one surface thereof a microstrip line including a land area formed as an enlarged end portion of said microstrip line; a resonance means; a transistor forming a high frequency oscillator with said resonance means, said transistor having a collector connected to said land area and to said resonance means through a first capacitor which is connected to said land area, a base connected to a reference potential, and an emitter connected to provide an output of said high-frequency oscillator; and a second capacitor for stabilizing high frequency oscillation formed by said land area and a common counterelectrode on a second surface of said dielectric substrate opposite to said land area, said land area having an area such as to provide a predetermined capacitance of said second capacitor; wherein the dimensions of said land area forming said second capacitor are insufficient to cause said land area to constitute a reactive component such as would create a series resonant circuit with the capacitance of said second capacitor that would resonate at a frequency in a normal frequency range of said oscillator.
Claim 2
Dependent Claim
189 words
A high-frequency oscillator comprising: a dielectric substrate having formed on one surface thereof a microstrip line including a land area formed as an enlarged end portion of said microstrip line; a resonance means; a transistor forming a high frequency oscillator with said resonance means, said transistor having a collector connected to said land area and to said resonance means through a first capacitor which is connected to said land area, a base connected to a reference potential, and an emitter connected to provide an output of said high-frequency oscillator; and a second capacitor for stabilizing high frequency oscillation formed by said land area and a common counterelectrode on a second surface of said dielectric substrate opposite to said land area, said land area having an area such as to provide a predetermined capacitance of said second capacitor; wherein the dimensions of said land area forming said second capacitor are insufficient to cause said land area to constitute a reactive component such as would create a series resonant circuit with the capacitance of said second capacitor that would resonate at a frequency in a normal frequency range of said oscillator.
Claim 3
Dependent Claim
48 words
A high frequency oscillator as recited in claim 1 wherein said land area is substantially rectangular in shape and wherein neither lateral dimension of the rectangle is great enough to constitute a reactive element that would resonate with said second capacitor at a normal frequency of said oscillator.