US4758476A
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Polyimide precursor resin composition and semiconductor device using the same
Assignee: Resonac Corp
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Filing: 1985-12-10
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Granted: 1988-07-19
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Expires: 2005-12-10
Abstract
Abstract A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages, (b) an aminosilane, and (c) a solvent for both the components (a) and (b), can form a polyimide film excellent in adhesiveness and heat resistance and is suitable for producing a semiconductor device having high reliability.
Inventors
- 👤 Hiroyoshi Sekine
- 👤 Hiroshi Suzuki
- 👤 Hidetaka Sato
- 👤 Shun-ichiro Uchimura
- 👤 Daisuke Makino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:20
CPC Classifications
C; C08; C08G; C08G73/00; C08G73/06; C08G73/10; C08G73/1057; C08G73/106; C08L; C08L79/00; C08L79/04; C08L79/08; H; H01; H01B; H01B3/00; H01B3/18; H01B3/30; H01B3/303; H01B3/306; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/929; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31551; Y10T428/31609; Y10T428/31612; Y10T428/31678; Y10T428/31681; Y10T428/31721
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
121 words
A semiconductor device having formed on conductor layers a polyimide resin film made by dehydrating and ring-closing a polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages obtained by reacting an aromatic diamine, a diaminosiloxane and an aromatic tetracarboxylic acid dianhydride, and (b) an aminosilane represented by the formula: ##STR8## wherein R 1 is a hydrogen atom or a monovalent hydrocarbon residue; R 2 is a divalent hydrocarbon residue; and R 3 is a monovalent hydrocarbon residue, the proportion of said diaminosiloxane for reaction being 0.1-10% by mole based on the total molar quantity of said aromatic diamine and diaminosiloxane, and the proportion of said aminosilane in the composition being 0.1-2.0% by weight based on said poly(amic acid).
Claim 2
Dependent Claim
121 words
A semiconductor device having formed on conductor layers a polyimide resin film made by dehydrating and ring-closing a polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages obtained by reacting an aromatic diamine, a diaminosiloxane and an aromatic tetracarboxylic acid dianhydride, and (b) an aminosilane represented by the formula: ##STR8## wherein R 1 is a hydrogen atom or a monovalent hydrocarbon residue; R 2 is a divalent hydrocarbon residue; and R 3 is a monovalent hydrocarbon residue, the proportion of said diaminosiloxane for reaction being 0.1-10% by mole based on the total molar quantity of said aromatic diamine and diaminosiloxane, and the proportion of said aminosilane in the composition being 0.1-2.0% by weight based on said poly(amic acid).
Claim 3
Dependent Claim
166 words
A semiconductor device according to claim 1, wherein the aromatic diamine is at least one member selected from the group consisting of 4,4'-diaminodiphenylether, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenyl sulfide, benzidine, metaphenylenediamine, paraphenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine and a compound of the formula: ##STR9## wherein Ar is an aromatic group; and Y is SO 2 or CO, and one amino group and the Y--NH 2 are at the ortho positions relative to each other, the diaminosiloxane is at least one compound of the formula: ##STR10## wherein R 4 and R 5 are independently a divalent hydrocarbon residue; R 6 , R 7 , R 8 and R 9 are independently a monovalent hydrocarbon residue; and m is an integer of 1 or greater, and the aromatic tetracarboxylic acid dianhydride is at least one member selected from the group consisting of pyromellitic acid dianhydride, 3,3',4,4'-diphenyltetracarboxylic acid dianhydride, 3,3',4,4'-benzophenonetetracarboxylic acid dianhydride, cyclopentanetetracarboxylic acid dianhydride, 1,2,5,6-naphthalenetetracarboxylic acid dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride, 2,3,5,6-pyridinetetracarboxylic acid dianhydride, 1,4,5,8-naphthalenetetracarboxylic acid dianhydride, 3,4,9,10-perillenetetracarboxylic acid dianhydride, and 4,4'-sulfonyldiphthalic acid dianhydride.
Claim 4
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein the aminosilane is at least one member selected from the group consisting of γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminobutyltriethoxysilane, N-phenyl-γ-aminopropyltriethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, and γ-ureidopropyltriethoxysilane.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 1, wherein the aminosilane is γ-aminopropyltriethoxysilane and the diaminosiloxane is 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane.
Claim 6
Dependent Claim
116 words
A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages obtained by reacting an aromatic diamine, a diaminosiloxane and an aromatic tetracarboxylic acid dianhydride, (b) an aminosilane represented by the formula: ##STR11## wherein R 1 is a hydrogen atom or a monovalent hydrocarbon residue; R 2 is a divalent hydrocarbon residue; and R 3 is a monovalent hydrocarbon residue, and (c) a solvent capable of dissolving said both compounds (a) and (b), the proportion of said diaminosiloxane for reaction being 0.1-10% by mole based on the total molar quantity of said aromatic diamine and diaminosiloxane, and the proportion of said aminosilane in the composition being 0.1-2.0% by weight based on said poly(amic acid).
Claim 7
Dependent Claim
116 words
A polyimide precursor resin composition comprising (a) a poly(amic acid) containing siloxane linkages obtained by reacting an aromatic diamine, a diaminosiloxane and an aromatic tetracarboxylic acid dianhydride, (b) an aminosilane represented by the formula: ##STR11## wherein R 1 is a hydrogen atom or a monovalent hydrocarbon residue; R 2 is a divalent hydrocarbon residue; and R 3 is a monovalent hydrocarbon residue, and (c) a solvent capable of dissolving said both compounds (a) and (b), the proportion of said diaminosiloxane for reaction being 0.1-10% by mole based on the total molar quantity of said aromatic diamine and diaminosiloxane, and the proportion of said aminosilane in the composition being 0.1-2.0% by weight based on said poly(amic acid).
Claim 8
Dependent Claim
166 words
A composition according to claim 5, wherein the aromatic diamine is at least one member selected from the group consisting of 4,4'-diaminodiphenylether, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenyl sulfide, benzidine, metaphenylenediamine, paraphenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine and a compound of the formula: ##STR12## wherein Ar is an aromatic group, and Y is SO 2 or CO, and one amino group and the Y--NH 2 group are at the ortho positions relative to each other, the diaminosiloxane is at least one compound of the formula: ##STR13## wherein R 4 and R 5 are independently a divalent hydrocarbon residue; R 6 , R 7 , R 8 and R 9 are independently a monovalent hydrocarbon residue; and m is an integer of 1 or greater, and the aromatic tetracarboxylic acid dianhydride is at least one member selected from the group consisting of pyromellitic acid dianhydride, 3,3',4,4'-diphenyltetracarboxylic acid dianhydride, 3,3',4,4'-benzophenonetetracarboxylic acid dianhydride, cyclopentanetetracarboxylic acid dianhydride, 1,2,5,6-naphthalenetetracarboxylic acid dianhydride, 2,3,6,7-naphthalenetetracarboxylic acid dianhydride, 2,3,5,6-pyridinetetracarboxylic acid dianhydride, 1,4,5,8-naphthalenetetracarboxylic acid dianhydride, 3,4,9,10-perillenetetracarboxylic acid dianhydride, and 4,4'-sulfonyldiphthalic acid dianhydride.
Claim 9
Dependent Claim
27 words
A composition according to claim 5, wherein the aminosilane is at least one member selected from the group consisting of γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminobutyltriethoxysilane, N-phenyl-γ-aminopropyltriethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, and γ-ureidopropyltriethoxysilane.
Claim 10
Dependent Claim
29 words
A composition according to claim 5, wherein the solvent is at least one member selected from the group consisting of N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-diethylformamide, dimethyl sulfoxide, hexamethylphosphoramide, and tetramethylenesulfone.
Claim 11
Dependent Claim
11 words
A composition according to claim 5, wherein the aminosilane is γ-aminopropyltriethoxysilane.
Claim 12
Dependent Claim
11 words
A composition according to claim 5, wherein the diaminosiloxane is 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |