US4758321A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of sputtered depositing chromium-silicon-nitrogen resistor
Assignee: US Philips Corp
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Filing: 1985-06-03
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Granted: 1988-07-19
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Expires: 2005-06-03
Abstract
Abstract A resistor having an insulating substrate bearing a thin layer of the alloy CrSi x , where 1≦x≦5 and which layer is doped with nitrogen. The doping may be spread homogeneously throughout the thickness or be concentrated in one or two thickness zones on the outside and/or on the side adjoining the substrate. As a result of the nitrogen doping an improvement of the stability of the resistor is obtained.
Inventors
- 👤 Ludovicus Vugts
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:44
CPC Classifications
H; H01; H01C; H01C7/00; H01C17/00; H01C17/06; H01C17/075; H01C17/12; H01C7/06; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49099
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
96 words
A method of manufacturing a resistor having an insulating substrate provided with a thin layer of the basic composition CrSi x wherein 1≦x≦5, comprising the steps of: first subjecting the insulating substrate to sputtering from a target of chromium silicon in an atmosphere of an inert gas to which nitrogen has been added; and then discontinuing the supply of nitrogen to the inert gas while continuing sputtering in said inert gas, thus providing said substrate with an adjacent nitrogen doped CrSi x layer and an undoped CrSi x layer adjacent to said doped CrSi x layer.
Claim 2
Independent Claim
96 words
A method of manufacturing a resistor having an insulating substrate provided with a thin layer of the basic composition CrSi x wherein 1≦x≦5, comprising the steps of: first subjecting the insulating substrate to sputtering from a target of chromium silicon in an atmosphere of an inert gas to which nitrogen has been added; and then discontinuing the supply of nitrogen to the inert gas while continuing sputtering in said inert gas, thus providing said substrate with an adjacent nitrogen doped CrSi x layer and an undoped CrSi x layer adjacent to said doped CrSi x layer.
Claim 3
Independent Claim
87 words
A method of manufacturing a resistor having an insulating substrate provided with a thin layer of the basic composition CrSi x wherein 1≦x≦5, comprising the steps of: first subjecting the insulating substrate to sputtering from a target of chromium silicon in an atmosphere of an inert gas and then adding a supply of nitrogen to said inert gas while continuing said sputtering, thus providing said substrate with an adjacent undoped CrSi x layer and a nitrogen doped CrSi x layer adjacent to said undoped CrSi x layer.
Claim 4
Independent Claim
87 words
A method of manufacturing a resistor having an insulating substrate provided with a thin layer of the basic composition CrSi x wherein 1≦x≦5, comprising the steps of: first subjecting the insulating substrate to sputtering from a target of chromium silicon in an atmosphere of an inert gas and then adding a supply of nitrogen to said inert gas while continuing said sputtering, thus providing said substrate with an adjacent undoped CrSi x layer and a nitrogen doped CrSi x layer adjacent to said undoped CrSi x layer.
Claim 5
Independent Claim
112 words
A method of manufacturing a resistor having an insulating substrate provided with a thin layer having the basic composition CrSi x in which 1≦×≦5, comprising the steps of: first subjecting the substrate to sputtering from a chromium silicon target in an atmosphere of an inert gas to which nitrogen has been added; discontinuing the supply of nitrogen to said inert gas while continuing said sputtering; and then supplying nitrogen again to said inert gas while continuing said sputtering, thus providing said substrate with a first adjacent nitrogen doped CrSi x layer, an intermediate undoped CrSi x layer and second nitrogen doped CrSi x layer adjacent to said intermediate undoped CrSi x layer.
Claim 6
Independent Claim
112 words
A method of manufacturing a resistor having an insulating substrate provided with a thin layer having the basic composition CrSi x in which 1≦×≦5, comprising the steps of: first subjecting the substrate to sputtering from a chromium silicon target in an atmosphere of an inert gas to which nitrogen has been added; discontinuing the supply of nitrogen to said inert gas while continuing said sputtering; and then supplying nitrogen again to said inert gas while continuing said sputtering, thus providing said substrate with a first adjacent nitrogen doped CrSi x layer, an intermediate undoped CrSi x layer and second nitrogen doped CrSi x layer adjacent to said intermediate undoped CrSi x layer.
References Cited (Backward Citations)
US4392992A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-19 | 1992-01-18 | 1992-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-19 | 1996-01-18 | 1996-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-19 | 2000-01-18 | 2000-07-19 | $7700.00 | Window Closed / Lapsed |