US4755862A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated triac structure with diac control
Assignee: STMicroelectronics SA
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Filing: 1985-12-09
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Granted: 1988-07-05
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Expires: 2005-12-09
Abstract
Abstract An integrated triac structure with diac control is provided on a common substrate. The diac is connected to the gate of the triac by a common metallization on the integrated substrate. The diac has a lateral structure with two metallizations on the same face of the substrate. It is separated from the triac by a passivated furrow 16 deeper than the gate region of the triac.
Inventors
- 👤 Jean P. Noguier
- 👤 Jean P. Montaut
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 12:09
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/221; H10D18/80
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
168 words
An integrated semiconductor component including a triac and a diac, comprising: a substrate having a first face and a second face; a first region of first conductivity type formed on said first face; a first metallization covering said first region; a second region of first conductivity type formed on said first face, separate from said first region; a second metallization covering said second region and separate from said first metallization; a third region of a second conductivity type adjacent said first and second regions and separate from said first and second metallizations; said diac being formed from said first, second and third regions and said first and second metallizations; said triac being formed on said substrate; one of said first and second metallizations being connected to a gate metallization of said triac on said first face and the other of said first and second metallizations being a control terminal for said component; said second face having a portion thereof opposite said disc which is partially removed and passivated.
Claim 2
Dependent Claim
168 words
An integrated semiconductor component including a triac and a diac, comprising: a substrate having a first face and a second face; a first region of first conductivity type formed on said first face; a first metallization covering said first region; a second region of first conductivity type formed on said first face, separate from said first region; a second metallization covering said second region and separate from said first metallization; a third region of a second conductivity type adjacent said first and second regions and separate from said first and second metallizations; said diac being formed from said first, second and third regions and said first and second metallizations; said triac being formed on said substrate; one of said first and second metallizations being connected to a gate metallization of said triac on said first face and the other of said first and second metallizations being a control terminal for said component; said second face having a portion thereof opposite said disc which is partially removed and passivated.
Claim 3
Dependent Claim
24 words
The component according to claim 1, wherein said third region is formed by the same semiconductor layer as a gate region of said triac.
Claim 4
Dependent Claim
25 words
The component according to claim 1, further comprising a passivated furrow between said diac and said triac, said furrow being deeper than said third region.
References Cited (Backward Citations)
US3508127A
Cited
US3524114A
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US3964091A
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US3970843A
Cited
FR2253285A1
Cited
FR2279224A1
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US4054893A
Cited
JPS5441582A
Cited
WO1983000582A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-05 | 1992-01-04 | 1992-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-05 | 1996-01-04 | 1996-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-05 | 2000-01-04 | 2000-07-05 | $7700.00 | Window Closed / Lapsed |