US4755256A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing small conductive members on a substrate
Assignee: Verizon Laboratories Inc
•
Filing: 1984-05-17
•
Granted: 1988-07-05
•
Expires: 2004-05-17
Abstract
Abstract Method of forming alternating narrow strips of conductive metal silicide, specifically cobalt disilicide, and silicon on a substrate as of silicon with a silicon dioxide or silicon nitride surface layer. Cobalt and silicon are deposited on the substrate in the mole ratio of the eutectic composition of cobalt disilicide and silicon. A molten zone is caused to traverse these materials which upon resolidification at the trailing edge of the molten zone segregate into the two eutectic phases forming alternating narrow strata or lamellae of cobalt disilicide and silicon.
Inventors
- 👤 Brian M. Ditchek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:30
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B13/00; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/913; Y10S148/00; Y10S148/019; Y10S148/147; Y10S438/00; Y10S438/929; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12535; Y10T428/12542; Y10T428/12549
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
254 words
The method of producing small conductive members on a substrate comprising providing a substrate having a surface; depositing silicon and a material on the surface of the substrate to form a layer; said material being selected from the group consisting of a metal a silicide of which forms a eutectic composition with silicon, the silicide of said metal which forms the eutectic composition with silicon, and mixtures thereof; the mole ratio of silicon to the metal present in the layer being approximately equal to the mole ratio of silicon to the metal in the eutectic composition of the silicide of said metal which forms the eutectic composition with silicon and silicon; heating an area on the surface of said layer to a temperature above the melting point of the eutectic composition of the silicide of said metal which forms the eutectic composition with silicon and silicon to establish a molten zone in said layer; and causing the molten zone to tranverse a portion of said layer whereby the portion of said layer traversed by the molten zone resolidifies into alternating strips of silicon and the silicide of said metal which forms the eutectic composition with silicon; wherein silicon and said material are deposited in alternate films to form said layer; and including prior to heating to establish a molten zone the step of annealing the silicon and material of said layer to form a more intimate mixture of silicon and the material in said layer and to reduce the surface reflectivity of said layer.
Claim 2
Independent Claim
254 words
The method of producing small conductive members on a substrate comprising providing a substrate having a surface; depositing silicon and a material on the surface of the substrate to form a layer; said material being selected from the group consisting of a metal a silicide of which forms a eutectic composition with silicon, the silicide of said metal which forms the eutectic composition with silicon, and mixtures thereof; the mole ratio of silicon to the metal present in the layer being approximately equal to the mole ratio of silicon to the metal in the eutectic composition of the silicide of said metal which forms the eutectic composition with silicon and silicon; heating an area on the surface of said layer to a temperature above the melting point of the eutectic composition of the silicide of said metal which forms the eutectic composition with silicon and silicon to establish a molten zone in said layer; and causing the molten zone to tranverse a portion of said layer whereby the portion of said layer traversed by the molten zone resolidifies into alternating strips of silicon and the silicide of said metal which forms the eutectic composition with silicon; wherein silicon and said material are deposited in alternate films to form said layer; and including prior to heating to establish a molten zone the step of annealing the silicon and material of said layer to form a more intimate mixture of silicon and the material in said layer and to reduce the surface reflectivity of said layer.
Claim 3
Dependent Claim
17 words
The method in accordance with claim 1 wherein said layer is less than approximately 2 microns thick.
Claim 4
Independent Claim
204 words
The method of producing small conductive members on a substrate comprising providing a substrate having a surface; depositing silicon and a material on the surface of the substrate to form a layer; said material being selected from the group consisting of cobalt, cobalt disilicide, and mixtures thereof; the mole ratio of silicon to cobalt present in the layer being approximately equal to the mole ratio of silicon to cobalt in the eutectic composition of cobalt disilicide and silicon; heating an area on the surface of said layer to a temperature above the melting point of the eutectic composition of cobalt disilicide and cobalt to establish a molten zone in said layer; and causing the molten zone to traverse a portion of said layer, the portion of said layer traversed by the molten zone resolidifying into alternate strips of single crystal silicon and single crystal cobalt disilicide; wherein silicon and said material are deposited in alternate films to form said layer; and including prior to heating to establish a molten zone the step of annealing the silicon and material of said layer to form a more intimate mixture of silicon and the material in said layer and to reduce the surface reflectivity of said layer.
Claim 5
Independent Claim
204 words
The method of producing small conductive members on a substrate comprising providing a substrate having a surface; depositing silicon and a material on the surface of the substrate to form a layer; said material being selected from the group consisting of cobalt, cobalt disilicide, and mixtures thereof; the mole ratio of silicon to cobalt present in the layer being approximately equal to the mole ratio of silicon to cobalt in the eutectic composition of cobalt disilicide and silicon; heating an area on the surface of said layer to a temperature above the melting point of the eutectic composition of cobalt disilicide and cobalt to establish a molten zone in said layer; and causing the molten zone to traverse a portion of said layer, the portion of said layer traversed by the molten zone resolidifying into alternate strips of single crystal silicon and single crystal cobalt disilicide; wherein silicon and said material are deposited in alternate films to form said layer; and including prior to heating to establish a molten zone the step of annealing the silicon and material of said layer to form a more intimate mixture of silicon and the material in said layer and to reduce the surface reflectivity of said layer.
Claim 6
Dependent Claim
17 words
The method in accordance with claim 3 wherein said layer is less than approximately 2 microns thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-05 | 1992-01-04 | 1992-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-05 | 1996-01-04 | 1996-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-05 | 2000-01-04 | 2000-07-05 | $7700.00 | Window Closed / Lapsed |