US4755015A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic integrated semiconductor device of semiconductor laser and optical waveguide
Assignee: Panasonic Holdings Corp
•
Filing: 1986-07-11
•
Granted: 1988-07-05
•
Expires: 2006-07-11
Abstract
Abstract A semiconductor device which includes a semiconductor substrate, an active layer in a quantum well structure disposed on said semiconductor substrate, an optical waveguide formed by a disordering part of said active layer, and a clad layer disposed on said active layer and optical waveguide. As a result of this structure, the coupling efficiency of the active layer and optical waveguide is extremely enhanced, and a high performance semiconductor device is obtained.
Inventors
- 👤 Tomoaki Uno
- 👤 Mototsugu Ogura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 15:29
CPC Classifications
B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/125; H01S5/02; H01S5/026; H01S5/20; H01S5/2054; H01S5/2059; H01S5/30; H01S5/34; H01S5/343; H01S5/34306; H01S5/3434
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
70 words
A monolithic integrated semiconductor device of a semiconductor laser and an optical waveguide comprising: a semiconductor substrate; a first semiconductor optical waveguide layer disposed on said semiconductor substrate; a semiconductor active layer of a quantum well structure disposed on said first semiconductor waveguide layer; a semiconductor cladding layer disposed on said semiconductor active layer; and a second semiconductor waveguide layer made by disordering a part of said semiconductor active layer.
Claim 2
Dependent Claim
70 words
A monolithic integrated semiconductor device of a semiconductor laser and an optical waveguide comprising: a semiconductor substrate; a first semiconductor optical waveguide layer disposed on said semiconductor substrate; a semiconductor active layer of a quantum well structure disposed on said first semiconductor waveguide layer; a semiconductor cladding layer disposed on said semiconductor active layer; and a second semiconductor waveguide layer made by disordering a part of said semiconductor active layer.
Claim 3
Dependent Claim
23 words
A monolithic integrated semiconductor device of claim 1, wherein said disordering is carried out by use of a doping impurity of high concentration.
Claim 4
Dependent Claim
17 words
A monolithic integrated semiconductor device of claim 1, wherein said disordering is carried out by local annealing.
Claim 5
Dependent Claim
32 words
A monolithic integrated semiconductor device of claim 1, wherein a grating is formed in the surface of said semiconductor substrate, at least at the portion corresponding to said second semiconductor waveguide layer.
Claim 6
Dependent Claim
31 words
A monolithic integrated semiconductor device of claim 1, wherein a grating is formed in the surface of said semiconductor substrate, at least at the portion corresponding to said semiconductor active layer.
Claim 7
Dependent Claim
12 words
A device according to claim 2, wherein the doping impurity is Zn.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-05 | 1992-01-04 | 1992-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-05 | 1996-01-04 | 1996-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-05 | 2000-01-04 | 2000-07-05 | $7700.00 | Window Closed / Lapsed |