US4751195A
Expired / Lapsed
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Method of manufacturing a heterojunction bipolar transistor
Assignee: Sony Corp
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Filing: 1987-06-25
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Granted: 1988-06-14
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Expires: 2007-06-25
Abstract
Abstract A method of manufacturing a heterojunction bipolar transistor in which a collector region, a base region and an emitter region are successively formed on a compound semiconductor substrate, forming the emitter region by epitaxial growth in a concave portion formed on an electrode leading region at the base region.
Inventors
- 👤 Hiroji Kawai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 06:25
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D10/00; H10D10/01; H10D10/021; H10D10/80; H10D10/821; H10D62/00; H10D62/80; H10D62/85; Y; Y10; Y10S; Y10S148/00; Y10S148/011
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
57 words
A method of manufacturing a heterojunction bipolar transistor which comprises: providing a compound semiconductor substrate, successively forming a collector region and a base region having an electrode leading region on said substrate, forming a concave portion in said electrode leading region, and forming an emitter region within said concave portion and in contact with said base region.
Claim 2
Independent Claim
57 words
A method of manufacturing a heterojunction bipolar transistor which comprises: providing a compound semiconductor substrate, successively forming a collector region and a base region having an electrode leading region on said substrate, forming a concave portion in said electrode leading region, and forming an emitter region within said concave portion and in contact with said base region.
Claim 3
Dependent Claim
16 words
A method according to claim 1 in which said emitter region is formed by epitaxial growth.
Claim 4
Dependent Claim
23 words
A method according to claim 1 which includes a step of forming an insulating layer between said emitter region and said base region.
Claim 5
Dependent Claim
20 words
A method according to claim 2 wherein said emitter region is formed by chemical vapor deposition, followed by epitaxial growth.
Claim 6
Dependent Claim
18 words
A method according to claim 1 wherein the length of said emitter region is less than 0.5 um.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-14 | 1991-12-14 | 1992-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-14 | 1995-12-14 | 1996-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-14 | 1999-12-14 | 2000-06-14 | $7700.00 | Window Closed / Lapsed |