US4749959A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multiple FET device having direct-coupled stages for improved microwave operation
Assignee: Celeritek Inc
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Filing: 1986-11-24
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Granted: 1988-06-07
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Expires: 2006-11-24
Abstract
Abstract A field effect transistor microwave circuit device includes first and second field effect transistors having common source connections with a pair of coupled transmission lines connecting the drain of a first transistor to the source of the second transistor and the source of the first transistor to the gate of the second transistor. The cross coupled transmission lines function as a balun between the transistors. The device is formed in III-V semiconductor and has an increased operating range in microwave frequencies. In alternative embodiments, the balun is connected to the circuit output thereby permitting the cascading of a plurality of FET devices. The balun can be integrated into the device structure or connected as a discrete element in a hybrid circuit arrangement.
Inventors
- 👤 Stephen C. Cripps
- 👤 John R. Anderson
- 👤 Gary J. Policky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:56
CPC Classifications
H; H03; H03F; H03F3/00; H03F3/60; H03F3/601
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
5 words
A microwave circuit device comprising
Claim 2
Dependent Claim
5 words
A microwave circuit device comprising
Claim 3
Dependent Claim
13 words
a first field effect transistor having a source, a drain, and a gate,
Claim 4
Dependent Claim
13 words
a first field effect transistor having a source, a drain, and a gate,
Claim 5
Dependent Claim
13 words
a second field effect transistor having a source, a drain, and a gate,
Claim 6
Dependent Claim
13 words
a second field effect transistor having a source, a drain, and a gate,
Claim 7
Dependent Claim
59 words
means for connecting the sources of said first and second transistors to a circuit common potential, and first and second coupled transmission lines, said first transmission line connecting said drain of said first transistor to said source of said second transistor, said second transmission line connecting said source of said first transistor to said gate of said second transistor.
Claim 8
Dependent Claim
59 words
means for connecting the sources of said first and second transistors to a circuit common potential, and first and second coupled transmission lines, said first transmission line connecting said drain of said first transistor to said source of said second transistor, said second transmission line connecting said source of said first transistor to said gate of said second transistor.
Claim 9
Dependent Claim
37 words
The microwave circuit device as defined by claim 1 wherein said device operates over a microwave frequency range, the length of said transmission lines being approximately one-eighth the wavelength of the highest frequency in said operating range.
Claim 10
Dependent Claim
23 words
The microwave circuit device as defined by claim 2 wherein said first and second transistors are formed in a group III-V semiconductor body.
Claim 11
Dependent Claim
24 words
The microwave circuit device as defined by claim 3 wherein said transmission lines comprise metal layers formed on a surface of said semiconductor body.
Claim 12
Dependent Claim
34 words
The microwave circuit device as defined by claim 1 and including an input terminal connected to said gate of said first transistor and an output terminal connected to said drain of said second transistor.
Claim 13
Dependent Claim
8 words
A dual gate field effect transistor structure comprising
Claim 14
Dependent Claim
8 words
A dual gate field effect transistor structure comprising
Claim 15
Dependent Claim
5 words
a body of gallium arsenide,
Claim 16
Dependent Claim
5 words
a body of gallium arsenide,
Claim 17
Dependent Claim
21 words
a first field effect transistor formed in said body of gallium arsenide and having a source, a drain, and a gate,
Claim 18
Dependent Claim
21 words
a first field effect transistor formed in said body of gallium arsenide and having a source, a drain, and a gate,
Claim 19
Dependent Claim
22 words
a second field effect transistor formed in said body of gallium arsenide and having a source, a drain, and a gate, and
Claim 20
Dependent Claim
22 words
a second field effect transistor formed in said body of gallium arsenide and having a source, a drain, and a gate, and
Claim 21
Dependent Claim
42 words
first and second coupled transmission lines, said first transmission line connecting said drain of said first transistor to said source of said second transistor, said second transmission line connecting said source of said first transistor to said gate of said second transistor.
Claim 22
Dependent Claim
42 words
first and second coupled transmission lines, said first transmission line connecting said drain of said first transistor to said source of said second transistor, said second transmission line connecting said source of said first transistor to said gate of said second transistor.
Claim 23
Dependent Claim
30 words
The dual gate field effect transistor structure as defined by claim 6 wherein said coupled transmission lines comprise metal layers formed on a surface of said body of gallium arsenide.
Claim 24
Dependent Claim
37 words
The dual gate field effect transistor structure as defined by claim 7 and including an input terminal connected to said gate of said first transistor and an output terminal connected to said drain of said second transistor.
Claim 25
Dependent Claim
22 words
The dual gate field effect transistor as defined by claim 6 wherein said body of gallium arsenide includes a doped epitaxial layer.
Claim 26
Dependent Claim
36 words
A microwave amplifier circuit comprising a plurality of field effect transistors, means connecting said transistors in cascade, and a balun connecting one transistor to a circuit output, said balun comprising first and second coupled transmission lines.
Claim 27
Dependent Claim
36 words
A microwave amplifier circuit comprising a plurality of field effect transistors, means connecting said transistors in cascade, and a balun connecting one transistor to a circuit output, said balun comprising first and second coupled transmission lines.
Claim 28
Dependent Claim
24 words
The microwave amplifier circuit as defined by claim 10 wherein the source of one transistor is connected to the drain of the other transistor.
Claim 29
Dependent Claim
40 words
The microwave amplifier circuit as defined by claim 11 and including an input terminal connected to a gate of one of said transistors, said first and second transmission lines being connected to a source and a drain of another transistor.
References Cited (Backward Citations)
US4277764A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-06-07 | 1991-12-07 | 1992-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-06-07 | 1995-12-07 | 1996-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-06-07 | 1999-12-07 | 2000-06-07 | $7700.00 | Window Closed / Lapsed |