Interconnecting wire for semiconductor devices
Abstract
Abstract An interconnecting wire of aluminum alloy for semiconductor devices which as improved ball-forming performance in the ball-bonding process, without any loss of conductivity and corrosion resistance. There is also provided an interconnecting wire for semiconductor devices which is lowered in resistance, with a minimum loss of conductivity and without any adverse effect on the bonding performance. The interconnecting wire contains about 0.1 to 45 wt % of an element having a melting point lower than about 450° C., with the balance being substantially aluminum, or contains about 0.1 to 45 wt % of one more elements having a melting point lower than about 450° C. and about 0.2 to 2 wt % of one or more elements selected from the group consisting of silicon, magnesium, manganese, and copper, with the balance being substantially aluminum.
Inventors
- 👤 Masanobu Nishio
- 👤 Kazuo Sawada
- 👤 Minoru Yokota
- 👤 Hitoshi Kishida
Bibliographic Details
Claims Analysis
Total Claims: 6References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-31 | 1991-11-30 | 1992-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-31 | 1995-11-30 | 1996-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-31 | 1999-11-30 | 2000-05-31 | $7700.00 | Window Closed / Lapsed |