US4746181A
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Optical semiconductor device
Assignee: Sharp Corp
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Filing: 1985-06-20
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Granted: 1988-05-24
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Expires: 2005-06-20
Abstract
Abstract An optical semiconductor device comprising laminated thin layers made of two kinds of binary compounds to form a superlatticed optical waveguiding structure and a superlatticed active region structure, thereby achieving a quantum well effect.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:31
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H10D; H10D62/00; H10D62/80; H10D62/81; H10D62/815; H10D62/8161; H10D62/8162; H10D62/8164; H10H20/822; H10H20/824; H01S5/20; H01S5/2004; H01S5/32; H01S5/3211; H01S5/3216; H01S5/3432
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
52 words
An optical semiconductor device comprising an active region confined by optical waveguiding structures, wherein each of said optical waveguiding structures is a superlattice layer in which layers of a first binary compound are alternately stacked with layers of a second binary compound, said first and second binary compounds having one common element.
Claim 2
Dependent Claim
52 words
An optical semiconductor device comprising an active region confined by optical waveguiding structures, wherein each of said optical waveguiding structures is a superlattice layer in which layers of a first binary compound are alternately stacked with layers of a second binary compound, said first and second binary compounds having one common element.
Claim 3
Dependent Claim
29 words
An optical semiconductor device according to claim 1, wherein said two kinds of binary compounds are GaAs and AlAs, GaSb and AlSb, InAs and AlAs, or InP and GaP.
Claim 4
Dependent Claim
29 words
An optical semiconductor device according to claim 1, wherein said alternative layers are successively grown to form a laminated structure by molecular beam epitaxy or metal-organic chemical vapor deposition.
Claim 5
Dependent Claim
56 words
An optical semiconductor device according to claim 1, wherein said active region includes an active layer sandwiched by two optical guide layers, each of said two optical guide layers being a superlattice layer in which layers of said binary compound are alternately stacked with layers of said second binary compound, thereby forming a single-quantum well structure.
Claim 6
Dependent Claim
55 words
An optical semiconductor device according to claim 1, wherein said active region includes an alternate lamination of active layers and barrier layers, each of said barrier layers being another alternate lamination in which layers of said first binary compound are alternately stacked with layers of said second binary compound, thereby forming a multi-quantum well structure.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-24 | 1991-11-23 | 1992-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-24 | 1995-11-23 | 1996-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-24 | 1999-11-23 | 2000-05-24 | $7700.00 | Window Closed / Lapsed |