US4745258A
Expired / Lapsed
US
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Apparatus for laser-cutting metal interconnections in a semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1987-01-12
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Granted: 1988-05-17
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Expires: 2007-01-12
Abstract
Abstract In apparatus for cutting metal interconnections in a semiconductor device according to the present invention, a semiconductor wafer (5) which has metal interconnections having a high melting point is placed in an oxygen atmosphere (9) within a chamber (6), and laser beams (4) are irradiated through an optical system (2) and an optical beam positioner (3) on the high melting point metal interconnections while maintaining the interior at the chamber (6) in a vacuum of 1 to 10 mTorr., and introducing oxygen from an oxygen inlet port (7) under a pressure of 1 to 1.5 Torr. to sublimate and cut the high melting point metal interconnections.
Inventors
- 👤 Junichi Arima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:10
CPC Classifications
B; B23; B23K; B23K26/00; B23K26/12; B23K26/123; B23K26/36; B23K26/40; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H10W20/068; H10W20/40; H10W20/49; H10W20/493; H10W20/494; B23K2101/00; B23K2101/36; B23K2101/40; B23K2103/00; B23K2103/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
122 words
Apparatus for cutting metal interconnections having a high melting point, in a semiconductor device, comprising: containment means for containing a low-pressure gaseous atmosphere comprising oxygen and for containing said semiconductor device within said atmosphere; means for maintaining said low pressure inside said containment means in a pressure range 1 to 10 mTorr.; a laser beam source means for providing a laser beam; optical beam-positioning means for positioning said laser beam to irradiate selected portions of said interconnections of said semiconductor device located in said low-pressure atmosphere within said containment means, whereby said interconnections are sublimated and cut, and a source of oxygen connected to said containment means to deliver oxygen gas thereto at a pressure in the range 1 to 1.5 mTorr.
Claim 2
Dependent Claim
122 words
Apparatus for cutting metal interconnections having a high melting point, in a semiconductor device, comprising: containment means for containing a low-pressure gaseous atmosphere comprising oxygen and for containing said semiconductor device within said atmosphere; means for maintaining said low pressure inside said containment means in a pressure range 1 to 10 mTorr.; a laser beam source means for providing a laser beam; optical beam-positioning means for positioning said laser beam to irradiate selected portions of said interconnections of said semiconductor device located in said low-pressure atmosphere within said containment means, whereby said interconnections are sublimated and cut, and a source of oxygen connected to said containment means to deliver oxygen gas thereto at a pressure in the range 1 to 1.5 mTorr.
Claim 3
Dependent Claim
38 words
Apparatus according to claim 1, wherein: said metal interconnections comprise a metal that is oxidized by combining with said oxygen in said low-pressure atmosphere to form a metal oxide which sublimates to generate cuts at said selected portions.
Claim 4
Dependent Claim
44 words
Apparatus according to claim 2, wherein: said laser beam source provides a laser beam capable of generating a local temperature in the range 800° C. to 1000° C. at said irradiated selected portions to effect said oxidation and said sublimation to generate said cuts.
Claim 5
Dependent Claim
38 words
Apparatus according to claim 1, wherein: said metal interconnections comprise a metal that is oxidized by combining with said oxygen in said low-pressure atmosphere to form a metal oxide which sublimates to generate cuts at said selected portions.
Claim 6
Dependent Claim
44 words
Apparatus according to claim 4, wherein: said laser beam source provides a laser beam capable of generating a local temperature in the range 800° C. to 1000° C. at said irradiated selected portions to effect said oxidation and said sublimation to generate said cuts.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-17 | 1991-11-16 | 1992-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-17 | 1995-11-16 | 1996-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-17 | 1999-11-16 | 2000-05-17 | $7700.00 | Window Closed / Lapsed |