US4744862A
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Manufacturing methods for nonlinear semiconductor element and liquid crystal display panel using the same
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1987-01-02
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Granted: 1988-05-17
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Expires: 2007-01-02
Abstract
Abstract A method of manufacturing a liquid crystal display panel including preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member where the forming of the first non-single-crystal semiconductor laminate member includes forming at least a first non-single-crystal semiconductor of P (or N) type on the substrate, forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconduictor layer, the i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and forming a third non-single-crystal semiconductor layer of P (or N) type on the i-type second non-single-crystal semiconductor layer; forming a second conductive layer serving as a second electrode in a pattern on the first non-single-crystal semiconductor layer laminate layer in opposing relation to the first conductive layer; selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member; preparing a second substrate member by forming on a second substrate an insulating surface and a third conductive layer; and filling liquid crystal in a gap defined by the first and second substrate members.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
- 👤 Toshimitsu Konuma
- 👤 Minoru Miyazaki
- 👤 Mitsunori Sakama
- 👤 Takashi Inushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:56
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1365; H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D8/00; H10D8/50; H10D86/00; H10D86/40; H10D86/60
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
207 words
A method of manufacturing a nonlinear semiconductor element comprising the steps of: (a) forming a first conductive layer, which will ultimately serve as a first electrode, on a substrate having an insulating surface; (b) forming a first non-single crystal semiconductor layer laminate member on the substrate so that it continuously extends on the first conductive layer, where the forming of the first non-single-crystal semiconductor layer laminate member includes the substeps of: (1) forming at least a first non-single-crystal semiconductor of a predetermined conductivity type on the substrate and extending on the first conductive layer, (2) forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconductor layer, said i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and (3) forming a third non-single-crystal semiconductor layer of said predetermined conductivity type on the i-type second non-single-crystal semiconductor layer; (c) forming a second conductive layer, which will ultimately serve as a second electrode, in a predetermined pattern on the first non-single-crystal semiconductor layer laminate member in opposing relation to the first conductive layer; and (d) selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member.
Claim 2
Independent Claim
207 words
A method of manufacturing a nonlinear semiconductor element comprising the steps of: (a) forming a first conductive layer, which will ultimately serve as a first electrode, on a substrate having an insulating surface; (b) forming a first non-single crystal semiconductor layer laminate member on the substrate so that it continuously extends on the first conductive layer, where the forming of the first non-single-crystal semiconductor layer laminate member includes the substeps of: (1) forming at least a first non-single-crystal semiconductor of a predetermined conductivity type on the substrate and extending on the first conductive layer, (2) forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconductor layer, said i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and (3) forming a third non-single-crystal semiconductor layer of said predetermined conductivity type on the i-type second non-single-crystal semiconductor layer; (c) forming a second conductive layer, which will ultimately serve as a second electrode, in a predetermined pattern on the first non-single-crystal semiconductor layer laminate member in opposing relation to the first conductive layer; and (d) selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member.
Claim 3
Dependent Claim
21 words
A method as in claim 1 wherein said predetermined conductivity type of said first and third non-single-crystal semiconductor layers is P-type.
Claim 4
Dependent Claim
21 words
A method as in claim 1 where said predetermined conductivity type of said first and third non-single-crystal semiconductor layers is N-type.
Claim 5
Dependent Claim
14 words
A method as in claim 3 including doping said i-type layer with said boron.
Claim 6
Independent Claim
265 words
A method of manufacturing a liquid crystal display panel comprising the steps of: (a) preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; (b) forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member which continuously extends on the first conductive layer, where the forming of the first non-single-crystal semiconductor laminate member includes the substeps of: (1) forming at least a first non-single-crystal semiconductor of a predetermined conductivity type on the substrate and extending on the first conductive layer, (2) forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconductor layer, said i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and (3) forming a third non-single-crystal semiconductor layer of said predetermined conductivity type on the i-type second non-single-crystal semiconductor layer; (c) forming a second conductive layer, which will ultimately serve as a second electrode, in a liquid pattern on the first non-single-crystal semiconductor layer laminate layer in opposing relation to the first conductive layer; (d) selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member; (e) preparing a second substrate member by forming on a second substrate an insulating surface and a third conductive layer; (f) positioning said first and second substrate members with respect to each other so that a gap is present therebetween; and (g) filling liquid crystal in said gap defined by the first and second substrate members.
Claim 7
Independent Claim
265 words
A method of manufacturing a liquid crystal display panel comprising the steps of: (a) preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; (b) forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member which continuously extends on the first conductive layer, where the forming of the first non-single-crystal semiconductor laminate member includes the substeps of: (1) forming at least a first non-single-crystal semiconductor of a predetermined conductivity type on the substrate and extending on the first conductive layer, (2) forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconductor layer, said i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and (3) forming a third non-single-crystal semiconductor layer of said predetermined conductivity type on the i-type second non-single-crystal semiconductor layer; (c) forming a second conductive layer, which will ultimately serve as a second electrode, in a liquid pattern on the first non-single-crystal semiconductor layer laminate layer in opposing relation to the first conductive layer; (d) selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member; (e) preparing a second substrate member by forming on a second substrate an insulating surface and a third conductive layer; (f) positioning said first and second substrate members with respect to each other so that a gap is present therebetween; and (g) filling liquid crystal in said gap defined by the first and second substrate members.
Claim 8
Dependent Claim
21 words
A method as in claim 5 where said predetermined conductivity type of said first and third non-single-crystal semiconductor layers is P-type.
Claim 9
Dependent Claim
21 words
A method as in claim 5 where said predetermined conductivity type of said first and third non-single-crystal semiconductor layers is N-type.
Claim 10
Dependent Claim
14 words
A method as in claim 5 including doping said i-type layer with said boron.
References Cited (Backward Citations)
US4331758A
Cited
US4654117A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-17 | 1991-11-16 | 1992-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-17 | 1995-11-16 | 1996-05-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-17 | 1999-11-16 | 2000-05-17 | $7700.00 | Window Closed / Lapsed |