US4744089A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Monolithic semiconductor laser and optical amplifier
Assignee: MRJ Corp
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Filing: 1986-05-19
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Granted: 1988-05-10
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Expires: 2006-05-19
Abstract
Abstract An integrated semiconductor source of high-power, single spatial mode, narrow spectral mode modulated radiation. A frequency selective feedback laser diode is disposed on the same semiconductor crystal with a power amplifier having a diverging active area which causes emitted light to be distributed over a large exit facet area.
Inventors
- 👤 Andrew H. Montroll
- 👤 Steven H. Macomber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:40
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/50; H01S5/10; H01S5/12; H01S5/02; H01S5/026; H01S5/1053; H01S5/1064; H01S5/20
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
106 words
An integrated semiconductor radiation generating device comprising: distributive feedback laser diode means including a first active region wherein a laser beam is generated; optical power amplifier means optically coupled to said distributed feedback laser diode means and having an entrance width substantially equal to and coplanar with the exit of said distributed feedback laser diode means; said optical power amplifier means including a second active region for expanding and amplifying said laser beam prior to emission from said power amplifier means; means connected to said distributive feedback laser diode means and said optical power amplifier means for supplying pumping current to each independently of the other.
Claim 2
Dependent Claim
106 words
An integrated semiconductor radiation generating device comprising: distributive feedback laser diode means including a first active region wherein a laser beam is generated; optical power amplifier means optically coupled to said distributed feedback laser diode means and having an entrance width substantially equal to and coplanar with the exit of said distributed feedback laser diode means; said optical power amplifier means including a second active region for expanding and amplifying said laser beam prior to emission from said power amplifier means; means connected to said distributive feedback laser diode means and said optical power amplifier means for supplying pumping current to each independently of the other.
Claim 3
Dependent Claim
23 words
An integrated semiconductor radiation generating device as claimed in claim 1 wherein: said second active region increases in width in the amplifying direction.
Claim 4
Dependent Claim
27 words
An integrated semiconductor radiation generating device as claimed in claim 1 wherein: said first and said second active regions are substantially coplanar and of equal constant thickness.
Claim 5
Dependent Claim
41 words
An integrated semiconductor radiation generating device as claimed in claim 1 wherein said distributive feedback laser diode mans comprises: a periodic structure extending at least the length of said first active region producing internal optical feedback within said first active region.
Claim 6
Dependent Claim
32 words
An integrated semiconductor radiation generating device as claimed in claim 4 wherein: said optical power amplifier means includes layers of n and p doped material with said second active region disposed therebetween.
Claim 7
Dependent Claim
27 words
An integrated semiconductor radiation generating device as claimed in claim 5 wherein: said optical power amplifier means includes an output facet, said output facet having antirefleting properties.
Claim 8
Dependent Claim
70 words
An integrated semiconductor radiation generating device as claimed in claim 1 wherein said distributive feedback laser diode means comprise: said first active region disposed between a layer of n doped material and a first layer of p doped material; said first layer of p doped material having a diffraction grating generated on its surface; said diffraction grating being substantially as wide and substantially as long as said first active region;
Claim 9
Dependent Claim
26 words
An integrated semiconductor radiation generating device as claimed in claim 1 wherein said distributive feedback diode means includes means to modulate the laser radiation eminating therefrom.
References Cited (Backward Citations)
US4573158A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-05-10 | 1991-11-09 | 1992-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-05-10 | 1995-11-09 | 1996-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-05-10 | 1999-11-09 | 2000-05-10 | $7700.00 | Window Closed / Lapsed |