Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
103 words
A method of doing one or more of writing data into, reading data out of, or removing data from a state changeable, chalcogenide memory medium, comprising the steps of: (a) applying projected beam energy to the medium to change a discrete portion of the medium from a solid state of first order through a high mobility intermediate state, to a solid state of second order; and (b) applying projected beam energy to the medium to change the discrete portion of the medium from the solid state of second order through a high mobility intermediate state, back to the solid state of first order.
Claim 2
Independent Claim
103 words
A method of doing one or more of writing data into, reading data out of, or removing data from a state changeable, chalcogenide memory medium, comprising the steps of: (a) applying projected beam energy to the medium to change a discrete portion of the medium from a solid state of first order through a high mobility intermediate state, to a solid state of second order; and (b) applying projected beam energy to the medium to change the discrete portion of the medium from the solid state of second order through a high mobility intermediate state, back to the solid state of first order.
Claim 3
Dependent Claim
29 words
The method of claim 1 wherein the state of first order is a relatively disordered state formed by a single, relatively high energy density, relatively short duration disordering pulse.
Claim 4
Dependent Claim
25 words
The method of claim 2 wherein the high energy disordering density pulse has an energy density of about 5 to 20 milliwatts per square micron.
Claim 5
Dependent Claim
21 words
The method of claim 2 wherein the high energy density disordering pulse has a duration of less than about 400 nanoseconds.
Claim 6
Dependent Claim
42 words
The method of claim 1 wherein the state of second relative order is a ordered state formed by applying an energy beam comprising: (a) a relatively high energy density, short duration component, and (b) a relatively low energy density, long duration component.
Claim 7
Dependent Claim
22 words
The method of claim 5 wherein the high energy density component has an energy density of about 5 to 20 milliwatts/square micron.
Claim 8
Dependent Claim
20 words
The method of claim 5 wherein the high energy density component has a duration of less than about 400 nanoseconds.
Claim 9
Dependent Claim
22 words
The method of claim 5 wherein the low energy density component has an energy density of about 1 to 2 milliwatts/square micron.
Claim 10
Dependent Claim
20 words
The method of claim 5 wherein the low energy density component has a duration of about 1 to 2 microseconds.
Claim 11
Dependent Claim
11 words
The method of claim 5 wherein the components are sequentially applied.
Claim 12
Dependent Claim
17 words
The method of claim 10 wherein the high energy density component precedes the low energy density component.
Claim 13
Dependent Claim
17 words
The method of claim 10 wherein the low energy density component precedes the high energy density component.
Claim 14
Dependent Claim
11 words
The method of claim 5 wherein the components are substantially superimposed.
Claim 15
Dependent Claim
12 words
The method of claim 13 wherein the components are initiated substantially simultaneously.
Claim 16
Dependent Claim
12 words
The method of claim 13 wherein the components are extinguished substantially simultaneously.
Claim 17
Dependent Claim
33 words
The method of claim 13 comprising initiating the high energy density component after initiating the low energy density component, and extinguishing the high energy density component before extinguishing the low energy density component.
Claim 18
Dependent Claim
18 words
The method of claim 1 wherein the recorded carrier to noise ratio is at least about 38 decibels.
Claim 19
Dependent Claim
18 words
The method of claim 1 wherein the erased carrier to noise ratio is less than about 6 decibels.
Claim 20
Dependent Claim
20 words
The method claim 1 comprising writing data by vitrifying said memory material, and erasing data by crystallizing said memory material.