Optical external modulation semiconductor element

Claim 2

An optical external modulation semiconductor element integrally associated with a distributed feedback (DFB) semiconductor laser, comprising: means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; and means on the waveguide portion for, without need of a temperature dependence, changing at will during operation the refractive index of the waveguide portion in which the diffraction grating is formed for modulating the intensity of output light of the laser.

Claim 3

An optical external modulation semiconductor element according to claim 1, in which said DFB laser has a diffraction grating without phase inversion at the center thereof, and in which the DFB laser is a two-wavelength oscillation semiconductor laser.

Claim 4

An optical external modulation semiconductor element according to claim 1, in which said DFB laser has a diffraction grating having its phase shifted by 1/4 of the waveguide portion wavelength.

Claim 5

An optical external modulation semiconductor element according to claim 1, in which said means on the waveguide portion comprises means to apply a field to the waveguide for changing the refractive index of the waveguide portion for modulating the intensity of the output light of the laser as a function of the intensity of said field.

Claim 6

An external optical modulation semiconductor element integrally associated with a distributed feedback (DFB) semiconductor laser, comprising means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; and means on the waveguide portion for, without need of a temperature dependence, changing at will the refractive index of the waveguide portion in which the diffraction grating is formed.

Claim 7

An external optical modulation semiconductor element integrally associated with a distributed feedback (DFB) semiconductor laser, comprising means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; and means on the waveguide portion for, without need of a temperature dependence, changing at will the refractive index of the waveguide portion in which the diffraction grating is formed.

Claim 8

An optical external modulation semiconductor element integrally associated with a distributed feedback (DFP) semiconductor laser, comprising: means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; means on the waveguide portion for changing at will during operation the refractive index of the waveguide portion in which the diffraction grating is formed for modulating the intensity of output light of the laser, and said means on the waveguide portion comprising voltage application electrodes to which a voltage is applied for changing at will during operation the refractive index of the waveguide portion.

Claim 9

An optical external modulation semiconductor element integrally associated with a distributed feedback (DFP) semiconductor laser, comprising: means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; means on the waveguide portion for changing at will during operation the refractive index of the waveguide portion in which the diffraction grating is formed for modulating the intensity of output light of the laser, and said means on the waveguide portion comprising voltage application electrodes to which a voltage is applied for changing at will during operation the refractive index of the waveguide portion.

Claim 10

An optical external modulation semiconductor element integrally associated with a distributed feedback (DFB) semiconductor laser, comprising: means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; means on the waveguide portion for changing at will during operation the refractive index of the waveguide portion in which the diffraction grating is formed for modulating the intensity of output light of the laser, and said means on said waveguide portion comprising current injecting electrodes for injecting carriers for changing at will during operation the refractive index of the waveguide portion.

Claim 11

An optical external modulation semiconductor element integrally associated with a distributed feedback (DFB) semiconductor laser, comprising: means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; means on the waveguide portion for changing at will during operation the refractive index of the waveguide portion in which the diffraction grating is formed for modulating the intensity of output light of the laser, and said means on said waveguide portion comprising current injecting electrodes for injecting carriers for changing at will during operation the refractive index of the waveguide portion.

Claim 12

An optical external modulation semiconductor element integrally associated with a distributed feedback (DFB) semiconductor laser, comprising: means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; means on the waveguide portion for changing at will during operation the refractive index of the waveguide portion in which the diffraction grating is formed for modulating the intensity of output light of the laser, and said means on said waveguide portion comprising light irradiating transparent electrodes to which light is applied for changing at will during operation the refractive index of the waveguide portion.

Claim 13

An optical external modulation semiconductor element integrally associated with a distributed feedback (DFB) semiconductor laser, comprising: means external to the DFB laser for defining a waveguide portion integral with said DFB laser having formed therein a diffraction grating of fixed period having a Bragg wavelength substantially equal to the wavelength of an output light from the distributed feedback semiconductor laser and formed along said waveguide portion for guiding unmodulated incident light radiated from the distributed feedback semiconductor laser to be inclined to the direction of travel of the light; means on the waveguide portion for changing at will during operation the refractive index of the waveguide portion in which the diffraction grating is formed for modulating the intensity of output light of the laser, and said means on said waveguide portion comprising light irradiating transparent electrodes to which light is applied for changing at will during operation the refractive index of the waveguide portion.