Step-and-repeat alignment and exposure system

Claim 3

The method as in claim 1, wherein the three axis stage assembly is a component assembly of a photometric printing apparatus of the type for printing the image of the first object, including a light source for illuminating the reticle, an imaging lens for forming the image of the reticle, and an alignment apparatus for use in aligning the stage mark image with the first and second alignment window images, and further wherein said first object includes a reticle having first and second alignment windows by which said first and second alignment window images are formed, and the positioning and offset determining steps include the steps of: a. moving the three axis stage assembly along the coordinate X and Y axes of motion to a first nominal x,y address so as to position the stage mark image in nominal alignment with the first alignment window image; b. offsetting the three axis stage assembly by such offset values δx' and δy' as required to obtain best alignment of the stage mark image with the first alignment window image; c. moving the three axis stage assembly along the coordinate X and Y axes of motion to a second nominal x,y address so as to position the stage mark image in nominal alignment with the second alignment window image; and d. offsetting the three axis stage assembly by such offset values δx" and δy" as required to obtain best alignment of the stage mark image with the second alignment window image.

Claim 4

The method of claim 2, wherein the calibrating step includes the step of: e. rotating and offsetting the coordinate U and V axes of motion with respect to the coordinate X and Y axes of motion according to the formulas u=(x-δx) cos φ+(y-δy) sin φ and v=(y-δy) cos φ-(x-δx) sin φ, where δx, δy and φ are determined by the formulas δx=1/2(δx'+δx"), δy=1/2(δy'+δy") and φ=arcsin (δy'-δy")/w, where w is the difference between the first and second nominal X addresses of the first and second alignment window images, respectively.

Claim 5

The method as in claim 3, wherein the light source includes a shutter, and the three axis stage assembly further includes a wafer chuck for supporting a semiconductive wafer to be coplanar with the image of the reticle, and further wherein an image of a first level of microcircuitry is formed when the reticle is illuminated by the light source, and said image of the first level of microcircuitry is photometrically printed in a plurality of regions of the semiconductive wafer, the method further comprising the steps of: f. mounting the semiconductive wafer on the wafer chuck in nominal orthogonal alignment with the coordinate U and V axes of motion of the three axis stage assembly; g. moving the three axis stage assembly in a serpentine fashion under the imaging lens; h. stopping the three axis stage assembly as said image of the first level of microcircuitry is positioned in each of the plurality of regions of the semiconductive wafer; and i. making an exposure of the image of the reticle by opening the shutter at each of the plurality of regions of the semiconductive wafer.

Claim 6

The method as in claim 4, wherein the recticle comprises a first level reticle having windows suitable for printing wafer alignment marks useful for aligning the semiconductive wafer during the photometric printing of succeeding levels of microcircuitry.

Claim 7

The method as in claim 3, wherein the light source includes a shutter and the three axis stage assembly includes a wafer chuck for supporing a semiconductive wafer to be coplanar with the image of the reticle, the semiconductive wafer having a processed first level of microcircuitry and wafer alignment marks positioned in a plurality of regions of the semiconductive wafer, and further wherein the reticle forms an image of a level of microcircuitry which succeeds a first level of microcircuitry when illuminated by the light source, and said image of the succeeding level of microcircuitry is photometrically printed in the plurality of regions of the wafer of semiconductive material, the method further comprising the steps of: f. mounting the semiconductor wafer on the wafer chuck in nominal orthogonal alignment with the coordinate U and V axes of motion of the three axis stage assembly; g. moving the three axis stage assembly along the coordinate U and V axes of motion to a first nominal u,v address so as to position a first region of the semiconductor wafer in nominal alignment with the image of the reticle; h. offsetting the three axis stage assembly, only along the coordinate U and V axes of motion, by such offset values δu a and δv a as required to obtain a "best fit" alignment of the wafer alignment marks of the first region of the semiconductive wafer with the first and second alignment window images of the image of the reticle; i. moving the three axis stage assembly along the coordinate U and V axes of motion to a second nominal u,v address so as to position a second region of the semiconductive wafer in nominal alignment with the image of the reticle; j. positioning the three axis stage assembly, along the coordinate U and V axes of motion only, by such offset values δu b and δv b as required to obtain a "best fit" alignment of the wafer alignment marks of the second region of the semiconductive wafer with the first and second alignment window images of the image of the reticle; k. determining a set of best average alignment offsets according to the formulas δu=1/2(δu.sub.a +δu.sub.b), δv=1/2(δv.sub.a +δv.sub.b) and δΨ=arcsin (δv.sub.b -δv.sub.a)/L where L is the difference in the nominal first and second U addresses of the first and second regions of the semiconductive wafer, respectively; l. offsetting the nominal addresses, along the coordinate U and V axes of motion of the three axis stage assembly, of all of the plurality of regions of the semiconductive wafer by δu and δv, and rotating the wafer chuck about the rotational Ψ axis of motion by δΨ m. moving the three axis stage assembly in a serpentine fashion under the imaging lens; n. stopping the three axis stage assembly as said image of the first level of microcircuitry is positioned in each of the plurality of regions of the semiconductive wafer; and o. making an exposure of the image of the reticle by opening the shutter at each of the plurality of regions.

Claim 8

The method as in claim 3 wherein the light source includes a shutter and the three axis stage assembly further includes a wafer chuck for supporting a semiconductive wafer to be coplanar with the image of the reticle, the semiconductive wafer having a processed first level of microcircuitry, including wafer alignment marks, formed in a plurality of regions of the semiconductive wafer, and further wherein the reticle forms an image of a succeeding level of microcircuitry on the semiconductive wafer, and said succeeding level of microcircuitry is photometrically printed in the plurality of regions of the semiconductive wafer, comprising the additional steps of: f. mounting the semiconductive wafer on the wafer chuck in nominal orthogonal alignment with the coordinate U and V axes of motion of the three axis stage assembly; g. moving the three axis stage assembly along the coordinate U and V axes of motion to a first nominal u,v address so as to position a first region of the semiconductive wafer in nominal alignment with the image of the reticle; h. positioning the three axis stage assembly, along the coordinate U and V axes of motion and about the rotational Ψ axis of motion, by such offset values δu, δv and δΨ as required to obtain alignment of the wafer alignment marks of the first region of the semiconductive wafer with the first and second alignment window images contained within the image of the reticle; i. making an exposure of the image of the reticle by opening the shutter; j. modifying the u,v address of a succeeding region of the semiconductive wafer by including the δu, δv and δΨ offsets of step "h.", so as to improve the anticipated nominal coincidence of the image of the succeeding level of microcircuitry with adjacent regions of the semiconductive wafer; k. moving the three axis stage assembly along the coordinate U and V axes of motion to the modified u,v address of step "j." so as to position the adjacent region of the semiconductive wafer in nominal alignment with the image of the reticle; l. positioning the three axis stage assembly, along the coordinate U and V axes of motion and about the rotational Ψ axis of motion, by such offset values δu, δv and δΨ as required to obtain alignment of the wafer alignment marks of the succeeding region of the semiconductive wafer with the alignment window images contained within the image of the reticle; and m. repeating steps "i." through "l." until the all of the plurality of regions of the semiconductive wafer are completely photometrically printed.