US4740606A
Expired / Lapsed
US
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Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
Assignee: ATK Launch Systems LLC
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Filing: 1986-07-01
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Granted: 1988-04-26
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Expires: 2006-07-01
Abstract
Abstract Adduct of the formula: H.sub.3 GaNR.sub.3 wherein each R is independently selected from lower alkyl having from 2 to about 4 carbon atoms, and a process for depositing gallium nitride, gallium arsenide, or gallium phosphide films, using the above adduct as a source of nitride (for the nitride film) and gallium. Arsenic and phosphorus compounds are also added for depositing gallium compounds of those elements. The process can also be performed using the analogous trimethylamine adduct.
Inventors
- 👤 Andreas A. Melas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:53
CPC Classifications
C; C07; C07F; C07F5/00; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301; C07F5/003
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
23 words
An adduct of the formula: H.sub.3 GaNR.sub.3 wherein each R is independently selected from alkyl having from 2 to about 4 carbon atoms.
Claim 2
Dependent Claim
23 words
An adduct of the formula: H.sub.3 GaNR.sub.3 wherein each R is independently selected from alkyl having from 2 to about 4 carbon atoms.
Claim 3
Dependent Claim
10 words
The adduct of claim 1, wherein each R is ethyl.
References Cited (Backward Citations)
US3318931A
Cited
US3607257A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-26 | 1991-10-26 | 1992-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-26 | 1995-10-26 | 1996-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-26 | 1999-10-26 | 2000-04-26 | $7700.00 | Window Closed / Lapsed |