US4739389A
Expired / Lapsed
US
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High-frequency circuit arrangement and semiconductor device for use in such an arrangement
Assignee: US Philips Corp
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Filing: 1986-09-26
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Granted: 1988-04-19
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Expires: 2006-09-26
Abstract
Abstract In a high-frequency circuit arrangement, passive parts of the circuit are realized in a semiconductor body in which active circuit elements of another semiconductor material are located in recesses in the semiconductor body. When the semi-conductor body is at least in part low-ohmic, a reference plane, for example, the ground plane, can extend very close to the elements of the circuit arrangement. Consequently, due to the shorter connections required, parasitic effects are considerably reduced. When only one active element is mounted and only connections for this element are formed on the semiconductor body, a very suitable support for mounting and measurement is obtained.
Inventors
- 👤 Willem Goedbloed
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 01:50
CPC Classifications
H; H10; H10W; H10W90/00; H10W44/00; H10W44/20; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/698; H10W44/226; H10W70/68; H10W70/682; H10W70/685; H10W72/00; H10W72/50; H10W72/541; H10W72/5445; H10W90/701; H10W90/751; H10W90/752; H10W90/754; H10W90/756
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
166 words
A high frequency microwave circuit arrangement comprising an insulating substrate, a reference conducting pattern on said substrate for providing a reference potential, and a microwave semiconductor device on said substrate, said semiconductor device comprising a first semiconductor body of a first semiconductor material and at least a second semiconductor body of a second semiconductor material, said first semiconductor body having first and second oppositely-located major sides, a metallization pattern on said first semiconductor body at said first major side, said first semiconductor body having a major semiconductor surface at said first major side, said second semiconductor body comprising an active microwave semiconductor circuit element on said first semiconductor body at said first major side thereof, said first semiconductor body comprising a low-ohmic semiconductor zone with respect to said first semiconductor body, which low-ohmic zone at least partially adjoins said major semiconductor surface, said low-ohmic zone-being electrically connected to said reference conducting pattern, and said active microwave semiconductor circuit element being electrically connected to said metallization pattern.
Claim 2
Dependent Claim
166 words
A high frequency microwave circuit arrangement comprising an insulating substrate, a reference conducting pattern on said substrate for providing a reference potential, and a microwave semiconductor device on said substrate, said semiconductor device comprising a first semiconductor body of a first semiconductor material and at least a second semiconductor body of a second semiconductor material, said first semiconductor body having first and second oppositely-located major sides, a metallization pattern on said first semiconductor body at said first major side, said first semiconductor body having a major semiconductor surface at said first major side, said second semiconductor body comprising an active microwave semiconductor circuit element on said first semiconductor body at said first major side thereof, said first semiconductor body comprising a low-ohmic semiconductor zone with respect to said first semiconductor body, which low-ohmic zone at least partially adjoins said major semiconductor surface, said low-ohmic zone-being electrically connected to said reference conducting pattern, and said active microwave semiconductor circuit element being electrically connected to said metallization pattern.
Claim 3
Dependent Claim
42 words
A circuit arrangement as claimed in claim 1, characterized in that the first semiconductor body comprises, at said first major side, a layer of insulating material covering said major semiconductor surface, at least part of said metallization pattern extending on said layer.
Claim 4
Dependent Claim
83 words
A semiconductor device as claimed in claim 1, characterized in that the semiconductor device comprises a first semiconductor body, said first semiconductor body having first and second oppositely-located major sides, and comprising a low-ohmic semiconductor zone with respect to said first semiconductor body, which low-ohmic zone at least partially adjoins a first major semiconductor surface located at said first major side of said first semiconductor body and a second major semiconductor surface located at said second major side of said first semiconductor body.
Claim 5
Dependent Claim
48 words
A high-frequency circuit arrangement as claimed in claim 1, characterized in that the first semiconductor body has a recess in which the second semiconductor body is disposed, said recess being of such a depth that said first and second semiconductor bodies are substantially coplanar at their upper surfaces.
Claim 6
Dependent Claim
31 words
A high-frequency circuit arrangement as claimed in claim 1 or 2, characterized in that the second semiconductor body comprises a second semiconductor material different from that of the first semiconductor material.
Claim 7
Dependent Claim
24 words
A circuit arrangement as claimed in claim 1 or 4, characterized in that the low-ohmic semiconductor zone comprises substantially the whole first semiconductor body.
Claim 8
Dependent Claim
24 words
A circuit arrangement as claimed in claim 1 or 4, characterized in that the low-ohmic semiconductor zone has a resistivity of at most 0.05Ω·cm.
Claim 9
Dependent Claim
47 words
A circuit arrangement as claimed in claim 4, characterized in that the low-ohmic semiconductor zone is connected, at the area of the main surface of the first semiconductor body in an electrically conducting manner, to a connection of a circuit element formed in the second semiconductor body.
Claim 10
Dependent Claim
41 words
A circuit arrangement as claimed in claim 2, characterized in that at least a portion of said metallization pattern forms a capacitor with the subjacent layer of insulating material as the dielectric and the underlying part of the first semiconductor body.
Claim 11
Dependent Claim
30 words
A circuit arrangement as claimed in claim 2, characterized in that at least a portion of said metallization pattern has one of a meander form and a helical spiral form.
Claim 12
Dependent Claim
25 words
A circuit arrangement as claimed in claim 2, characterized in that the metallization pattern has two connection areas, between which a resistance layer is disposed.
Claim 13
Dependent Claim
30 words
A circuit arrangement as claimed in claim 2, characterized in that a part of the metallization pattern extends as a self-supporting conductor beyond the periphery of the first semiconductor body.
Claim 14
Dependent Claim
34 words
A circuit arrangement as claimed in claim 10, characterized in that the metallization pattern is locally insulated from the first semiconductor body by a glass layer having a thickness of at most 100 μm.
Claim 15
Dependent Claim
27 words
A semiconductor device as claimed in claim 3, characterized in that the first semiconductor body is provided at the second major semiconductor surface with a contact metallization.
Claim 16
Dependent Claim
31 words
A semiconductor device as claimed in claim 3, characterized in that the first semiconductor body has a recess at said first major side in which the second semiconductor body is disposed.
Claim 17
Dependent Claim
26 words
A semiconductor device as claimed in claim 3, characterized in that the second semiconductor body comprises a second semiconductor material different from the first semiconductor material.
Claim 18
Dependent Claim
22 words
A semiconductor device as claimed in claim 3, characterized in that the low-ohmic semiconductor zone comprises substantially the whole first semiconductor body.
Claim 19
Dependent Claim
22 words
A semiconductor device as claimed in claim 3, characterized in that the low-ohmic semiconductor zone has a resistivity of at most 0.05Ω·cm.
Claim 20
Dependent Claim
48 words
A semiconductor device as claimed in claim 3, characterized in that the low-ohmic semiconductor zone is connected, at the area of the first major side of the first emiconductor body in an electrically conducting manner, to a connection of a circuit element formed in the second semiconductor body.
Claim 21
Dependent Claim
53 words
A semiconductor device as claimed in claim 3, characterized in that a circuit element formed in the second semiconductor body is connected in an electrically conducting manner to at least part of a metallization pattern provided on a layer of insulating material on the first major semiconductor surface of the first semiconductor body.
Claim 22
Dependent Claim
42 words
A semiconductor device as claimed in claim 20, characterized in that at least a portion of the metallization pattern forms a capacitance with the subjacent layer of insulating material as the dielectric and with the underlying part of the first semiconductor body.
Claim 23
Dependent Claim
29 words
A semiconductor device as claimed in claim 20, characterized in that at least a portion of the metallization pattern has one of a meander form and a spiral form.
Claim 24
Dependent Claim
25 words
A semiconductor device as claimed in claim 20, characterized in that the metallization pattern has two connection areas between which a resistance layer is disposed.
Claim 25
Dependent Claim
30 words
A semiconductor device as claimed in claim 20, characterized in that a part of the metallization pattern extends as a self-supporting conductor beyond the periphery of the first semiconductor body.
Claim 26
Dependent Claim
31 words
A semiconductor device as claimed in claim 22, characterized in that the metallization pattern is locally insulated from the first semiconductor body by a glass layer of at most 100 μm.
Claim 27
Dependent Claim
27 words
A semiconductor device as claimed in claim 3, characterized in that the first semiconductor body comprises silicon and the second semiconductor body comprises of a III-V compound.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-19 | 1991-10-19 | 1992-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-19 | 1995-10-19 | 1996-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-19 | 1999-10-19 | 2000-04-19 | $7700.00 | Window Closed / Lapsed |