Laser probing for solid-state device

Claim 1

A method of laser probing a solid-state device, comprising the steps of: irradiating a laser light beam as a first irradiation on desired regions of a solid-state device to be examined; producing a first image on a first color based on a first photo-induced current or PIC, induced by said first irradiation of said laser light beam on said desired regions; irradiating a laser light beam as a second irradiation on the corresponding regions of a reference solid-state device of substantially the same constitution as said solid-state device to be examined; producing a second image of a second color, different than said first color, based on a second PIC induced by said second irradiation of laser light beam on said corresponding regions; and superposingly displaying said first image and said second image in a manner that images of corresponding regions are superposed on each other, thereby to produce spot images of only one of the first or second color for regions on said solid-state device where said first PIC and said second PIC differ from each other therein, and to produce a color of display for other regions from said such regions on said solid-state device are of a composite color of the first color and the second color.

Claim 2

A method of laser probing a solid-state device, comprising the steps of: irradiating a laser light beam as a first irradiation on desired regions of a solid-state device to be examined; producing a first image on a first color based on a first photo-induced current or PIC, induced by said first irradiation of said laser light beam on said desired regions; irradiating a laser light beam as a second irradiation on the corresponding regions of a reference solid-state device of substantially the same constitution as said solid-state device to be examined; producing a second image of a second color, different than said first color, based on a second PIC induced by said second irradiation of laser light beam on said corresponding regions; and superposingly displaying said first image and said second image in a manner that images of corresponding regions are superposed on each other, thereby to produce spot images of only one of the first or second color for regions on said solid-state device where said first PIC and said second PIC differ from each other therein, and to produce a color of display for other regions from said such regions on said solid-state device are of a composite color of the first color and the second color.

Claim 6

A method of laser probing a solid-state device, comprising the steps of: impressing an input signal on a semiconductor device to be examined; irradiating a laser light beam as a first irradiation on desired semiconductor regions of said semiconductor device to be examined while impressed with said input signal; producing a first image of a first color based on a first photo-induced current or PIC induced in said semiconductor device by said first irradiation of laser light beam on said desired regions and taken out from its external terminals; irradiating a laser light beam as a second irradiation on corresponding semiconductor regions of a reference semiconductor device of substantially the same constitution as said semiconductor device to be examined; producing a second image of a second color different from said first color based on a second PIC induced in said semiconductor device by said second irradiation of said laser light beam on said corresponding regions; superposingly displaying said first image and said second image in a manner that the image of said corresponding regions are superposed on each other, thereby to produce spot images of only one color which can be the first or second color, only for such regions on said semiconductor device where said first PIC and said second PIC differ each other therein, and to produce a color of display for other regions from said such regions on said semiconductor device of a composite color of the first color and the second color.

Claim 7

A method of laser probing a solid-state device, comprising the steps of: impressing an input signal on a semiconductor device to be examined; irradiating a laser light beam as a first irradiation on desired semiconductor regions of said semiconductor device to be examined while impressed with said input signal; producing a first image of a first color based on a first photo-induced current or PIC induced in said semiconductor device by said first irradiation of laser light beam on said desired regions and taken out from its external terminals; irradiating a laser light beam as a second irradiation on corresponding semiconductor regions of a reference semiconductor device of substantially the same constitution as said semiconductor device to be examined; producing a second image of a second color different from said first color based on a second PIC induced in said semiconductor device by said second irradiation of said laser light beam on said corresponding regions; superposingly displaying said first image and said second image in a manner that the image of said corresponding regions are superposed on each other, thereby to produce spot images of only one color which can be the first or second color, only for such regions on said semiconductor device where said first PIC and said second PIC differ each other therein, and to produce a color of display for other regions from said such regions on said semiconductor device of a composite color of the first color and the second color.

Claim 31

A method for laser probe testing a solid-state device, comprising the steps of: (a) irradiating a laser light onto a desired region of a reference solid-state device; (b) detecting a reference photo-induced current in said reference semiconductor device; (c) storing said reference photo-induced current as an image of a first color; (d) irradiating laser light onto a desired region of an object solid-state device, said desired region of said object solid-state device corresponding to said desired region of said reference solid-state device; (e) detecting an object photo-induced current in said object solid-state device; and (f) storing said object photo-induced current as an image of a second color different from said first color; and (g) displaying said first and second images in a superposed manner such that images of corresponding regions are superposed upon one another, so that images of only one color are produced where said detected photo-induced currents differ from one another, and an image of a superposed color between said first and second colors are displayed where said photo-induced currents correspond with one another.

Claim 32

A method for laser probe testing a solid-state device, comprising the steps of: (a) irradiating a laser light onto a desired region of a reference solid-state device; (b) detecting a reference photo-induced current in said reference semiconductor device; (c) storing said reference photo-induced current as an image of a first color; (d) irradiating laser light onto a desired region of an object solid-state device, said desired region of said object solid-state device corresponding to said desired region of said reference solid-state device; (e) detecting an object photo-induced current in said object solid-state device; and (f) storing said object photo-induced current as an image of a second color different from said first color; and (g) displaying said first and second images in a superposed manner such that images of corresponding regions are superposed upon one another, so that images of only one color are produced where said detected photo-induced currents differ from one another, and an image of a superposed color between said first and second colors are displayed where said photo-induced currents correspond with one another.

Claim 35

An apparatus for laser probe testing a solid-state device, comprising: means for irradiating a laser light onto a desired region of a solid-state device; means for detecting a photo-induced current in said solid-state device; means for storing said photo-induced current as an image of a predetermined color, a photo-induced current of a reference solid-state device being stored in a first color, as an image of a photo-induced current of an object solid-state device being stored in a second color; and means for displaying said images in a superposed manner so that regions corresponding to areas where photo-induced currents do not correspond are displayed in only one color, and regions corresponding to areas where photo-induced currents do correspond are displayed in a color which is a combination of said first and second color.

Claim 36

An apparatus for laser probe testing a solid-state device, comprising: means for irradiating a laser light onto a desired region of a solid-state device; means for detecting a photo-induced current in said solid-state device; means for storing said photo-induced current as an image of a predetermined color, a photo-induced current of a reference solid-state device being stored in a first color, as an image of a photo-induced current of an object solid-state device being stored in a second color; and means for displaying said images in a superposed manner so that regions corresponding to areas where photo-induced currents do not correspond are displayed in only one color, and regions corresponding to areas where photo-induced currents do correspond are displayed in a color which is a combination of said first and second color.

Claim 38

A method of laser probing a solid-state device, comprising the steps of: impressing an input signal on a semiconductor device to be examined; irradiating a laser light beam as a first irradiation on desired semiconductor regions of said semiconductor device to be examined while impressed with said input signal; producing a first image of a first color based on a first photo-induced current or PIC induced in said semiconductor device by said first irradiation of said laser light beam on said desired regions; irradiating a laser light beam as a second irradiation on corresponding semiconductor regions of a reference semiconductor device of substantially the same constitution as said semiconductor device to be examined; producing a second image of a second color different from said first color based on a second PIC induced in said semiconductor device by said second irradiation of said laser light beam on said corresponding regions; superposingly displaying said first image and said second image in a manner that the image of said corresponding regions are superposed on each other, thereby to produce spot images of only one color which can be the first or second color, only for such regions on said semiconductor device where said first PIC and said second PIC differ each other therein, and to produce a color of display for other regions from said such regions on said semiconductor device of a composite color of the first color and the second color; detecting a reflection light from the surface of said semiconductor device; and producing superposingly displaying a third image by utilising said reflection light.

Claim 39

A method of laser probing a solid-state device, comprising the steps of: impressing an input signal on a semiconductor device to be examined; irradiating a laser light beam as a first irradiation on desired semiconductor regions of said semiconductor device to be examined while impressed with said input signal; producing a first image of a first color based on a first photo-induced current or PIC induced in said semiconductor device by said first irradiation of said laser light beam on said desired regions; irradiating a laser light beam as a second irradiation on corresponding semiconductor regions of a reference semiconductor device of substantially the same constitution as said semiconductor device to be examined; producing a second image of a second color different from said first color based on a second PIC induced in said semiconductor device by said second irradiation of said laser light beam on said corresponding regions; superposingly displaying said first image and said second image in a manner that the image of said corresponding regions are superposed on each other, thereby to produce spot images of only one color which can be the first or second color, only for such regions on said semiconductor device where said first PIC and said second PIC differ each other therein, and to produce a color of display for other regions from said such regions on said semiconductor device of a composite color of the first color and the second color; detecting a reflection light from the surface of said semiconductor device; and producing superposingly displaying a third image by utilising said reflection light.