US4734168A
Expired / Lapsed
US
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Method of making n-silicon electrodes
Assignee: Texas A&M University
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Filing: 1984-11-30
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Granted: 1988-03-29
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Expires: 2004-11-30
Abstract
Abstract The photoelectrolysis of water by solar radiation to produce hydrogen and oxygen is achieved using semiconductor electrodes. The cell comprises a p-silicon wafer treated with catalyst as photocathode and metal doped n-silicon wafer as photoanode. The cell is operated at a small bias potential.
Inventors
- 👤 John O'M. Bockris
- 👤 Marek Szklarczyk
- 👤 Aliasgar Q. Contractor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:20
CPC Classifications
C; C25; C25B; C25B1/00; C25B1/50; C25B1/55; C01; C01B; C01B13/00; C01B13/02; C01B13/0203; C01B13/0207; C01B3/00; C01B3/02; C01B3/04; C01B3/042; C25B1/01; C25B1/02; C25B1/04; Y; Y02; Y02E; Y02E60/00; Y02E60/30; Y02E60/36; Y10; Y10S; Y10S205/00; Y10S205/923
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
68 words
The method of preparing an improved photoanode comprising; depositing a dopant agent selected from the group consisting of platinum, palladium, nickel, cobalt, gold, rhodium, ruthenium and tellurium in island form onto at least one surface of an n-silicon body; forming a layer of silicon dioxide on said one surface of said body; and dispersing the dopant into said silicon dioxide layer to thereby render the layer electrically conductive.
Claim 2
Independent Claim
68 words
The method of preparing an improved photoanode comprising; depositing a dopant agent selected from the group consisting of platinum, palladium, nickel, cobalt, gold, rhodium, ruthenium and tellurium in island form onto at least one surface of an n-silicon body; forming a layer of silicon dioxide on said one surface of said body; and dispersing the dopant into said silicon dioxide layer to thereby render the layer electrically conductive.
Claim 3
Dependent Claim
32 words
The method according to claim 1 wherein an amount of from about 0.002 to about 2.5 monolayers of said dopant are deposited in island form on said surface of said n-silicon body.
Claim 4
Dependent Claim
42 words
The method according to claim 1 wherein said silicon dioxide layer is formed utilizing an anodic sweep of from about 0.6 to about 1.9 volts (NHE) in 0.2 molar H 2 SO 4 under simulated solar illumination equal to about 2.5 suns.
Claim 5
Dependent Claim
50 words
The method according to claim 1 wherein said dopant deposited in island form is dispersed into said silicon dioxide layer by heating said n-silicon body with said dopant and SiO 2 layer deposited thereon at approximately 200° C. for approximately 5 minutes at a vacuum of about 5×10 -5 torr.
Claim 6
Independent Claim
53 words
The method of preparing an improved photoanode comprising: depositing platinum in island form onto at least one surface of an n-silicon body; forming a layer of silicon dioxide on said surface of said n-silicon body; and dispersing said platinum into said silicon dioxide layer to thereby render said silicon dioxide layer electrically conductive.
Claim 7
Independent Claim
53 words
The method of preparing an improved photoanode comprising: depositing platinum in island form onto at least one surface of an n-silicon body; forming a layer of silicon dioxide on said surface of said n-silicon body; and dispersing said platinum into said silicon dioxide layer to thereby render said silicon dioxide layer electrically conductive.
Claim 8
Dependent Claim
28 words
The method according to claim 5 wherein an amount of approximately 0.25 monolayers of said platinum is deposited in island form onto said surface of said n-silicon body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-03-29 | 1991-09-28 | 1992-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-03-29 | 1995-09-28 | 1996-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-03-29 | 1999-09-28 | 2000-03-29 | $7700.00 | Window Closed / Lapsed |