US4725559A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the fabrication of a gallium arsenide grating solar cell
Assignee: Chevron USA Inc
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Filing: 1986-10-23
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Granted: 1988-02-16
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Expires: 2006-10-23
Abstract
Abstract A photovolatic device is disclosed comprising a p-type conductive substrate, a sandwich of p-type Al y Ga.sub.(1-y) As bottom layer/p-type GaAs base layer/p-type Al y Ga.sub.(1-y) As top layer (wherein the surface area of the p-type Al y Ga.sub.(1-y) As top layer is less than the surface area of the p-type GaAs base layer, a layer of n + -type GaAs emitter contacting the surface of the p-type GaAs base layer (wherein the surface area of the layer of n + -type GaAs emitter is less than one-tenth the surface area of the p-type GaAs base layer), an insulating layer contacting the surface of the p-type Al y Ga.sub.(1-y) As top layer, and means for forming electrical contacts to the substrate and the incident surface of the n + -type GaAsemitter layer.
Inventors
- 👤 Lewis M. Fraas
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:55
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/11; H10F10/14; H10F10/144; H10F71/00; H10F71/127; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
148 words
A process of fabricating a solar cell comprising: (a) growing a sandwich of p-type Al y Ga.sub.(1-y) As bottom layer/p-type GaAs base layer/p-type Al y Ga.sub.(1-y) As top layer on a p-type conductive substrate; (b) coating said sandwich with a dielectric which serves as an AR coating; (c) using photolithography to etch regions through the AR coating and top p-type Al y Ga.sub.(1-y) As layer, thereby exposing GaAs regions; (d) depositing gallium on said exposed GaAs regions by decomposing triethyl gallium, wherein triethyl tin is introduced in an appropriate amount with the triethyl gallium for n + -type doping; (e) exposing the deposited Ga:Sn to a gas containing either As 2 or AsH 3 by flowing said gas over the deposited Ga:Sn to form n + -type GaAs emitter; and (f) forming electrical contacts to said substrate and the incident surface of said n + -type GaAs emitter.
Claim 2
Dependent Claim
148 words
A process of fabricating a solar cell comprising: (a) growing a sandwich of p-type Al y Ga.sub.(1-y) As bottom layer/p-type GaAs base layer/p-type Al y Ga.sub.(1-y) As top layer on a p-type conductive substrate; (b) coating said sandwich with a dielectric which serves as an AR coating; (c) using photolithography to etch regions through the AR coating and top p-type Al y Ga.sub.(1-y) As layer, thereby exposing GaAs regions; (d) depositing gallium on said exposed GaAs regions by decomposing triethyl gallium, wherein triethyl tin is introduced in an appropriate amount with the triethyl gallium for n + -type doping; (e) exposing the deposited Ga:Sn to a gas containing either As 2 or AsH 3 by flowing said gas over the deposited Ga:Sn to form n + -type GaAs emitter; and (f) forming electrical contacts to said substrate and the incident surface of said n + -type GaAs emitter.
Claim 3
Dependent Claim
14 words
The process according to claim 1 wherein y has the value of about 0.8.
Claim 4
Dependent Claim
15 words
The process according to claim 1 wherein said p-type conductive substrate is a GaAs wafer.
Claim 5
Dependent Claim
19 words
The process according to claim 1 wherein said insulating layer is a layer of Si 3 N 4 .
Claim 6
Dependent Claim
19 words
The process according to claim 1 wherein said n + -type GaAs emitter comprises a plurality of dot junctions.
Claim 7
Dependent Claim
160 words
A process of fabricating a solar cell comprising: (a) growing a sandwich of p-type Al 0 .8 Ga 0 .2 As bottom layer/p-type GaAs base layer/p-type Al 0 .8 Ga 0 .2 As top layer on a p-type GaAs wafer substrate; (b) coating said sandwich with Si 3 N 4 which serves as an AR coating; (c) using photolithography to etch dots through the AR coating and top p-type Al 0 .8 Ga 0 .2 As layer, thereby exposing GaAs regions; (d) depositing gallium on said exposed GaAs regions by decomposing triethyl gallium, wherein triethyl tin is introduced in an appropriate amount with the triethyl gallium for n + -type doping; (e) exposing the deposited Ga:Sn to a gas containing either As 2 or AsH 3 by flowing said gas over the deposited Ga:Sn to form n + -type GaAs emitter; and (f) forming electrical contacts to said substrate and the incident surface of said n + -type GaAs emitter.
Claim 8
Dependent Claim
160 words
A process of fabricating a solar cell comprising: (a) growing a sandwich of p-type Al 0 .8 Ga 0 .2 As bottom layer/p-type GaAs base layer/p-type Al 0 .8 Ga 0 .2 As top layer on a p-type GaAs wafer substrate; (b) coating said sandwich with Si 3 N 4 which serves as an AR coating; (c) using photolithography to etch dots through the AR coating and top p-type Al 0 .8 Ga 0 .2 As layer, thereby exposing GaAs regions; (d) depositing gallium on said exposed GaAs regions by decomposing triethyl gallium, wherein triethyl tin is introduced in an appropriate amount with the triethyl gallium for n + -type doping; (e) exposing the deposited Ga:Sn to a gas containing either As 2 or AsH 3 by flowing said gas over the deposited Ga:Sn to form n + -type GaAs emitter; and (f) forming electrical contacts to said substrate and the incident surface of said n + -type GaAs emitter.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-15 | 1991-08-17 | 1992-02-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-15 | 1995-08-17 | 1996-02-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-15 | 1999-08-17 | 2000-02-16 | $7700.00 | Window Closed / Lapsed |