Solid state cyclotron laser

Claim 2

A solid state cyclotron laser for generating coherent electromagnetic radiation comprising: a semiconductor assembly comprising an emitter region, a base region and a collector region, each such region comprised of n-doped narrow band gap semiconductor crystal material, first barrier means separating said emitter region and from said base region, second barrier means separating said collector region from said base region, first biasing means for applying negative bias to said emitter region relative to said base region and causing the majority of electrons entering said base region from said emitter region to enter said base region as hot electrons, second biasing means for applying positive bias to said collector region relative to said base region for removing from said base region to said collector region essentially the same number of electrons as enter said base region from said emitter region while restricting to essentially zero the flow of electrons having energies in thermal equilibrium with the crystal lattice of said base region, means for applying in said base region a magnetic flux to cause said hot electrons to gyrate in helical trajectories around the lines of magnetic flux, quantize into Landau levels and generate electromagnetic radiation as said hot electrons go from higher to lower Landau levels, and optical resonant cavity means encompassing said base region for producing coherent electromagnetic radiation from said electromagnetic radiation generated in said base region as said hot electrons go from higher to lower Landau levels.

Claim 3

A solid state cyclotron laser for generating coherent electromagnetic radiation comprising: a semiconductor assembly comprising an emitter region, a base region and a collector region, each such region comprised of p-doped narrow band gap semiconductor crystal lattice material, said emitter region being separated from said base region by first barrier means for restricting the flow of low energy holes from said base region to said emitter region, and said collection region being separated from said base region by second barrier means for restricting the flow of low energy holes from said emitter region to said base region, first biasing means for applying positive bias to said emitter region with respect to said base region, the magnitude of said bias and said first barrier means being chosen to cause the holes entering said base region from said emitter region to enter said base region as hot holes, second biasing means for applying a negative bias to said collector region with respect to said base region so as to remove from said base region to said collector region essentially the same number of holes as enter said base region from said emitter region while restricting to essentially zero the flow of holes having energies in thermal equilibrium with the crystal lattice of said base region, means for applying in said base region a magnetic field having a flux density in excess of 1.0 T to cause said hot holes to gyrate in helical trajectories around the lines of flux of said magnetic field, quantize into Landau levels and radiate as said hot holes go from higher to lower Landau levels, and optical resonance cavity means containing said base region for producing coherent electromagnetic radiation from said electromagnetic radiation produced in said base region as said hot holes go from higher to lower Landau levels.

Claim 4

A solid state cyclotron laser for generating coherent electromagnetic radiation comprising: a semiconductor assembly comprising an emitter region, a base region and a collector region, each such region comprised of p-doped narrow band gap semiconductor crystal lattice material, said emitter region being separated from said base region by first barrier means for restricting the flow of low energy holes from said base region to said emitter region, and said collection region being separated from said base region by second barrier means for restricting the flow of low energy holes from said emitter region to said base region, first biasing means for applying positive bias to said emitter region with respect to said base region, the magnitude of said bias and said first barrier means being chosen to cause the holes entering said base region from said emitter region to enter said base region as hot holes, second biasing means for applying a negative bias to said collector region with respect to said base region so as to remove from said base region to said collector region essentially the same number of holes as enter said base region from said emitter region while restricting to essentially zero the flow of holes having energies in thermal equilibrium with the crystal lattice of said base region, means for applying in said base region a magnetic field having a flux density in excess of 1.0 T to cause said hot holes to gyrate in helical trajectories around the lines of flux of said magnetic field, quantize into Landau levels and radiate as said hot holes go from higher to lower Landau levels, and optical resonance cavity means containing said base region for producing coherent electromagnetic radiation from said electromagnetic radiation produced in said base region as said hot holes go from higher to lower Landau levels.

Claim 5

A laser according to claim 1 wherein said emitter, base and collector regions are formed of semiconductor crystal materials selected from the group consisting of InSb, InAs, and Cd 1-x Hg x Te.

Claim 6

A laser according to claim 1 wherein said first and second barrier materials are formed of semiconductor crystal materials selected from the group consisting of In 1-x Ga x Sb and In 1-x Al x Sb.

Claim 7

A laser according to claim 1 wherein said emitter, base and collector regions comprise InSb semiconductor crystal material, and said first and second barrier materials comprise In 1-x Ga x Sb.

Claim 8

A laser according to claim 2 wherein said emitter, base and collector region comprise GaAs and said barrier region is formed of semiconductor crystal materials selected from the group consisting of Ga 1-x Al x As and materials having an i-n-i depression of the valence band.

Claim 9

A laser according to claim 1 wherein said optical resonant cavity means forms a Fabry-Perot cavity.

Claim 10

A laser according to claim 2 wherein said optical resonance cavity means forms a Fabry-Perot cavity.