Phase locked diode laser array

Claim 2

A semicodnuctor laser diode array comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is applied thereto, said active layer terminating in first and second end facets, contact means for applying said pumping current, a first set of parallel spaced apart active waveguides defined in said active layer, said first set of active waveguides extending from said first end facet and terminating before said second end facet, a second set of parallel spaced apart active waveguides defined in said active layer, said second set of active waveguides extending from said second end facet and termianting before said first end facet, said first and second sets of active waveguides being interdigitated with one another in a coupling region wherein there is optical coupling between adjacent active waveguides in the first and second sets, said coupling providing feedback paths for supporting laser oscillations in said first and second sets of active waveguides, the threshold current for lasing being lowest when all of said active waveguides in said first and second sets oscillate in phase.

Claim 3

A semiconductor laser diode array which favors oscillation in the zero degree phase shift mode comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is applied thereto, said active layer terminating at first and second spaced apart end facets, contact means for receiving said pumping current, a first set of parallel spaced apart active waveguides defined in said active layer extending inward from the first facet and terminating before the second facet, a second set of parallel spaced apart active waveguides defined in said active layer extending inward from the second facet and terminating before said first facet, said first and second sets of active waveguides being interdigitated with one another in a coupling region wherein there is optical coupling between adjacent active waveguides in said first and second sets so as to define feedback paths which extend from said first end facet along said active waveguide in said first set, through said coupling region, and along an active waveguide in said second set to said second end facet, whereby said active waveguides in said first and second sets favor oscillation in the zero degree phase shift mode.

Claim 4

A semiconductor laser diode array which favors oscillation in the zero degree phase shift mode comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is applied thereto, said active layer terminating at first and second spaced apart end facets, contact means for receiving said pumping current, a first set of parallel spaced apart active waveguides defined in said active layer extending inward from the first facet and terminating before the second facet, a second set of parallel spaced apart active waveguides defined in said active layer extending inward from the second facet and terminating before said first facet, said first and second sets of active waveguides being interdigitated with one another in a coupling region wherein there is optical coupling between adjacent active waveguides in said first and second sets so as to define feedback paths which extend from said first end facet along said active waveguide in said first set, through said coupling region, and along an active waveguide in said second set to said second end facet, whereby said active waveguides in said first and second sets favor oscillation in the zero degree phase shift mode.

Claim 5

The array of claim 2 wherein each of said active waveguides in said first and second sets is an index-guided fundamental lateral mode waveguide.

Claim 6

The array of claim 2 wherein each of said active waveguides is a fundamental lateral waveguide including a first portion located near one of said end facets, and a second portion in said coupling region, said first portion being wider than said second portion, said first and second portions being connected to each other by a tapered portion.

Claim 7

The array of claim 2 wherein each of said active waveguides is a fundamental lateral mode waveguide including a portion of uniform width near one of said end facets, and a tapered portion in said coupling region.

Claim 8

The array of claim 5 wherein said array includes a means for introducing loss for suppressing higher order array lateral modes greater than the fundamental lateral mode.

Claim 9

The array of claim 6 wherein said loss means comprises anti-reflection coated regions formed on one of said end facets.

Claim 10

The array of claim 5 wherein a higher order array lateral mode greater than the fundamental lateral mode is suppressed by decreasing the coupling efficiency between active waveguides in said first and second sets near where the higher order array lateral mode has maxima.

Claim 11

The array of claim 5 wherein the interaction length for coupling between active waveguides of said first and second sets in said coupling region is shortened at predetermined locations in said array to suppress one or more higher order array lateral modes greater than the fundamental lateral mode.

Claim 12

The array of claim 5 wherein a higher order array lateral mode greater than the fundamental lateral mode is suppressed by sharply tapering at least one active waveguide near where the higher order array lateral mode has maxima.

Claim 13

The array of claim 6 wherein a higher order array lateral mode greater than the fundamental lateral mode is suppressed by increasing the spacing between adjacent active waveguides in the coupling region near where the higher order array lateral mode has maxima.

Claim 14

The array of claim 2 wherein at least one of said first and second sets includes an active waveguide which comprises: a first waveguide portion located adjacent one of said end facet, said first waveguide portion being wide enough to support at least the fundamental lateral mode, and a second waveguide portion formed contiguous with said first waveguide portion and extending into said coupling region for optical coupling with the active waveguide of the other set, said second waveguide portion supporting only the fundamental lateral mode, said waveguide portions being coupled such that the coupling loss is least for the fundamental lateral mode so that said first waveguide portion and said second waveguide portion both support only the fundamental lateral mode.

Claim 15

The array of claim 1 wherein said first set of waveguides are fundamental lateral mode waveguide and wherein said second set of waveguides are fundamental lateral mode waveguides, said second set of waveguides all terminating in a laterally guided region, wide enough to support higher order lateral mode, said fundamental mode waveguides of said second set being coupled to said laterally guided region such that coupling losses are least for the fundamental lateral mode of the laterally guided region so that the laterally guided region supports only the fundamental lateral mode.

Claim 16

A semiconductor laser diode array comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is applied thereto, said active layer terminating at first and second spaced apart end facets, contact means for applying said pumping current, first and second parallel spaced apart active waveguides defined in said active layer extending inward from said first end facet and terminating before said second end facet, and a third active waveguide defined in said active layer extending inward from said second end facet and terminating in the space between said first and second active waveguide before said first end facet, said first and second active waveguides being optically coupled to said third active waveguide to provide a feedback path for sustaining laser oscillations in said first, second, and third active waveguides, the threshold current for sustaining laser oscillations being lowest when said first, second and third active waveguides oscillate in phase.

Claim 17

A semiconductor laser diode array comprising: a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is applied thereto, said active layer terminating at first and second spaced apart end facets, contact means for applying said pumping current, first and second parallel spaced apart active waveguides defined in said active layer extending inward from said first end facet and terminating before said second end facet, and a third active waveguide defined in said active layer extending inward from said second end facet and terminating in the space between said first and second active waveguide before said first end facet, said first and second active waveguides being optically coupled to said third active waveguide to provide a feedback path for sustaining laser oscillations in said first, second, and third active waveguides, the threshold current for sustaining laser oscillations being lowest when said first, second and third active waveguides oscillate in phase.

Claim 18

A semiconductor laser diode comprising; a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is applied thereto, said active layer terminating at first and second spaced apart end facets, contact means for applying said pumping current, a first set of parallel spaced apart active waveguides defined in said active layer extending inward from said first end facet and terminating before said second end facet, a second set of parallel spaced apart active waveguides defined in said active layer extending inward from said second end facet and termianting before said first end facet, and a third set of parallel spaced apart active waveguides defined in said active layer in the space between said end facets but spaced apart from both said end facets, said first and third active waveguide sets being intedigitated with one another in a first coupling region where there is optical coupling between adjacent active waveguides in the first and third sets, and said second and third active waveguide sets being interdigitated with one another in a second coupling region where there is optical coupling between adjacent active waveguides in the second and third sets, the threshold current for lasing being lowest when all of said active waveguides in said first, second, and third sets oscillate in phase.

Claim 19

A semiconductor laser diode comprising; a substrate, a plurality of layers fabricated on said substrate, said layers including an active layer capable of emitting radiation when a pumping current is applied thereto, said active layer terminating at first and second spaced apart end facets, contact means for applying said pumping current, a first set of parallel spaced apart active waveguides defined in said active layer extending inward from said first end facet and terminating before said second end facet, a second set of parallel spaced apart active waveguides defined in said active layer extending inward from said second end facet and termianting before said first end facet, and a third set of parallel spaced apart active waveguides defined in said active layer in the space between said end facets but spaced apart from both said end facets, said first and third active waveguide sets being intedigitated with one another in a first coupling region where there is optical coupling between adjacent active waveguides in the first and third sets, and said second and third active waveguide sets being interdigitated with one another in a second coupling region where there is optical coupling between adjacent active waveguides in the second and third sets, the threshold current for lasing being lowest when all of said active waveguides in said first, second, and third sets oscillate in phase.