US4721989A
Expired / Lapsed
US
⏱️ 0.0 years remaining
CCD with transfer channel at lower potential than supply channel
Assignee: Toshiba Corp
•
Filing: 1987-06-04
•
Granted: 1988-01-26
•
Expires: 2007-06-04
Abstract
Abstract A solid-state image sensing device has a plurality of first CCDs for transferring a charge along the column direction and a second CCD for transferring the charge supplied from the first CCDs along the row direction. The first and second CCDs have n-type first transfer channels and an n-type second transfer channel which are formed on a p-type semiconductor body. The p-type semiconductor body has a first region contacting the bottom surface of the first transfer channels and a second region contacting the bottom surface of the second transfer channel. An impurity concentration of the second region is lower than that of the first region.
Inventors
- 👤 Tetsuo Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:28
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
331 words
A charge transfer device comprising: a semiconductor substrate; charge supplying means including a plurality of supply channels of a second conductivity type of uniform impurity concentration formed in the surface area of the substrate and extending in a first direction for supplying charge through said supply channels; a charge coupled device, including a transfer channel having a control region of the second conductivity type of uniform impurity concentration having the same impurity concentration as each of the supply channels and formed in the surface area of the substrate in direct contact with a contiguous portion of each of the supply channels and extending in a second direction different from the first direction, a plurality of first and second electrodes arranged in the second direction, and voltage applying means for selectively applying a control voltage to the first and second electrodes to transfer charge in the second direction, each of said first electrodes being insulatively formed to extend over a portion of said control region and over said contiguous portion of a corresponding one of the supply channels, each of said second electrodes being insulatively formed to extend over a portion of said transfer channel; and potential control means including a first embedded layer of a first conductivity type and uniform impurity concentration underlying the control region of the transfer channel and a second embedded layer of the first conductivity type and uniform impurity concentration underlying the contiguous portion of the corresponding supply channel, the impurity concentration of said first embedded layer underlying the control region being different than that of said second embedded layer underlying the contiguous portion of the corresponding supply channel, for keeping the electrostatic potential energy of the control region and the contiguous portion of the corresponding supply channel at respective first and second levels, with the first level lower than the second level, wherein charge is transferred from the supply channels to the transfer channel when the control voltage is applied to each of the first electrodes.
Claim 2
Dependent Claim
331 words
A charge transfer device comprising: a semiconductor substrate; charge supplying means including a plurality of supply channels of a second conductivity type of uniform impurity concentration formed in the surface area of the substrate and extending in a first direction for supplying charge through said supply channels; a charge coupled device, including a transfer channel having a control region of the second conductivity type of uniform impurity concentration having the same impurity concentration as each of the supply channels and formed in the surface area of the substrate in direct contact with a contiguous portion of each of the supply channels and extending in a second direction different from the first direction, a plurality of first and second electrodes arranged in the second direction, and voltage applying means for selectively applying a control voltage to the first and second electrodes to transfer charge in the second direction, each of said first electrodes being insulatively formed to extend over a portion of said control region and over said contiguous portion of a corresponding one of the supply channels, each of said second electrodes being insulatively formed to extend over a portion of said transfer channel; and potential control means including a first embedded layer of a first conductivity type and uniform impurity concentration underlying the control region of the transfer channel and a second embedded layer of the first conductivity type and uniform impurity concentration underlying the contiguous portion of the corresponding supply channel, the impurity concentration of said first embedded layer underlying the control region being different than that of said second embedded layer underlying the contiguous portion of the corresponding supply channel, for keeping the electrostatic potential energy of the control region and the contiguous portion of the corresponding supply channel at respective first and second levels, with the first level lower than the second level, wherein charge is transferred from the supply channels to the transfer channel when the control voltage is applied to each of the first electrodes.
Claim 3
Dependent Claim
41 words
A charge transfer device according to claim 1, wherein said charge supplying means includes a plurality of photoelectric transducers for generating charges and supplying the charges to said supply channels, and transfer means for transferring the charges in said supply channels.
Claim 4
Dependent Claim
281 words
A charge transfer device comprising: a semiconductor substrate; charge supplying means including a plurality of supply channels of a first conductivity type of uniform impurity concentration formed in the surface area of the substrate and extending in a first direction for supplying charge through said supply channels; a charge coupled device, including a transfer channel having a control region of the first conductivity type of uniform impurity concentration formed in the surface area of the substrate in direct contact with a contiguous portion of each of the supply channels and extending in a second direction different from the first direction, a plurality of first and second electrodes arranged in the second direction, and voltage applying means for selectively applying a control voltage to the first and second electrodes to transfer charge in the second direction, each of said first electrodes being insulatively formed to extend over a portion of said control region and over said contiguous portion of a corresponding one of the supply channels, each of said second electrodes being insulatively formed to extend over a portion of said transfer channel; and potential control means including the control region of the transfer channel and the contiguous portion of the corresponding supply channel, the impurity concentration of the control region being different than that of the contiguous portion of the corresponding supply channel, for keeping the electrostatic potential energy of the control region and the contiguous portion of the corresponding supply channel at respective first and second levels, with the first level lower than the second level, wherein charge is transferred from the supply channels to the transfer channel when the control voltage is applied to each of the first electrodes.
Claim 5
Dependent Claim
281 words
A charge transfer device comprising: a semiconductor substrate; charge supplying means including a plurality of supply channels of a first conductivity type of uniform impurity concentration formed in the surface area of the substrate and extending in a first direction for supplying charge through said supply channels; a charge coupled device, including a transfer channel having a control region of the first conductivity type of uniform impurity concentration formed in the surface area of the substrate in direct contact with a contiguous portion of each of the supply channels and extending in a second direction different from the first direction, a plurality of first and second electrodes arranged in the second direction, and voltage applying means for selectively applying a control voltage to the first and second electrodes to transfer charge in the second direction, each of said first electrodes being insulatively formed to extend over a portion of said control region and over said contiguous portion of a corresponding one of the supply channels, each of said second electrodes being insulatively formed to extend over a portion of said transfer channel; and potential control means including the control region of the transfer channel and the contiguous portion of the corresponding supply channel, the impurity concentration of the control region being different than that of the contiguous portion of the corresponding supply channel, for keeping the electrostatic potential energy of the control region and the contiguous portion of the corresponding supply channel at respective first and second levels, with the first level lower than the second level, wherein charge is transferred from the supply channels to the transfer channel when the control voltage is applied to each of the first electrodes.
Claim 6
Dependent Claim
43 words
A charge transfer device according to claim 3, wherein said potential control means further has an embedded layer of a second conductivity type formed in said substrate, the bottom surfaces of said supply and transfer channels being in contact with said embedded layer.
Claim 7
Dependent Claim
41 words
A charge transfer device according to claim 4, wherein said charge supplying means includes a plurality of photoelectric transducers for generating charges and supplying the charges to said supply channels, and transfer means for transferring the charges in said supply channels.
Claim 8
Dependent Claim
250 words
A charge transfer device comprising: a substrate; charge supplying means including a plurality of supply channels formed in the surface area of said substrate and extending in a first direction for supplying charges through said supply channels; a charge coupled device including a transfer channel formed in the surface area of said substrate in contact with said supply channels and extending in a second direction different from said first direction, a plurality of first and second electrodes arranged in the second direction, and voltage applying means for selectively applying a control voltage to the first and second electrodes to transfer charge in the second direction, each of said first electrodes being insulatively formed to extend over a portion of said transfer channel and over a portion of a different one of said supply channels, each of said second electrodes being insulatively formed to extend over a portion of said transfer channel; and potential control means for keeping the electrostatic potential energy under each first electrode in a portion of said transfer channel and a portion of a corresponding supply channel at respective first and second levels when the control voltage is applied to each of said first electrodes, with the first level lower than the second level, wherein said potential control means includes an insulating layer formed on said supply channels with a first thickness and on said transfer channel with a second thickness larger than said first thickness, said first and second electrodes being formed on said insulating layer.
Claim 9
Dependent Claim
250 words
A charge transfer device comprising: a substrate; charge supplying means including a plurality of supply channels formed in the surface area of said substrate and extending in a first direction for supplying charges through said supply channels; a charge coupled device including a transfer channel formed in the surface area of said substrate in contact with said supply channels and extending in a second direction different from said first direction, a plurality of first and second electrodes arranged in the second direction, and voltage applying means for selectively applying a control voltage to the first and second electrodes to transfer charge in the second direction, each of said first electrodes being insulatively formed to extend over a portion of said transfer channel and over a portion of a different one of said supply channels, each of said second electrodes being insulatively formed to extend over a portion of said transfer channel; and potential control means for keeping the electrostatic potential energy under each first electrode in a portion of said transfer channel and a portion of a corresponding supply channel at respective first and second levels when the control voltage is applied to each of said first electrodes, with the first level lower than the second level, wherein said potential control means includes an insulating layer formed on said supply channels with a first thickness and on said transfer channel with a second thickness larger than said first thickness, said first and second electrodes being formed on said insulating layer.
Claim 10
Dependent Claim
29 words
A charge transfer device according to claim 6, wherein said substrate is a semiconductor substrate, and said supply channels and tranasfer channel are formed of a first conductivity type.
Claim 11
Dependent Claim
43 words
A charge transfer device according to claim 7, wherein said potential control means further has an embedded layer of a second conductivity type formed in said substrate, the bottom surface of said supply and transfer channels being in contact with said embedded layer.
Claim 12
Dependent Claim
40 words
A charge transfer device according to claim 8, wherein said charge supplying means includes a plurality of photoelectric transducers for generating and supplying the charges to said supply channels, and transfer means for transferring the charges in said supply channels.
References Cited (Backward Citations)
US3995302A
Cited
US4065847A
Cited
GB2007937A
Cited
US4206371A
Cited
GB2065974A
Cited
US4504848A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-25 | 1991-07-27 | 1992-01-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-25 | 1995-07-27 | 1996-01-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-25 | 1999-07-27 | 2000-01-26 | $7700.00 | Window Closed / Lapsed |