US4718070A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface emitting diode laser
Assignee: Massachusetts Institute of Technology
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Filing: 1985-01-22
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Granted: 1988-01-05
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Expires: 2005-01-22
Abstract
Abstract A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostructure diode laser. The mirror surfaces are preferably formed using a mass-transport heating process. Other mirror shapes may be formed in accordance with the invention.
Inventors
- 👤 Zong-Long Liau
- 👤 James N. Walpole
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:59
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/0201; H01S5/10; H01S5/18; H01S5/185; H01S5/40; H01S5/42; H01S5/0203
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
158 words
A device for emitting laser radiation comprising: (a) a semiconductor substrate having a planar extending surface; (b) a first layer of semiconductive material formed over said planar substrate surface; (c) a second layer of semiconductor material formed on said first layer and wherein a planar p-n junction is formed within the first layer parallel said surface and wherein the semicondutor material of said first layer is removed on four sides perpendicular to said surface to form a narrow elongate strip of active material with narrow end edges and long side edges forming the active region of a resonant laser cavity which is embedded in said semiconductor material and wherein light is emitted from a narrow edge of said strip; (d) reflector means formed in said layers adjacent said light emitting end edge for reflecting the emitted light in a direction perpendicular to the plane of said p-n junction; and (e) electrode contacts electrically coupled to said p-n junction.
Claim 2
Independent Claim
158 words
A device for emitting laser radiation comprising: (a) a semiconductor substrate having a planar extending surface; (b) a first layer of semiconductive material formed over said planar substrate surface; (c) a second layer of semiconductor material formed on said first layer and wherein a planar p-n junction is formed within the first layer parallel said surface and wherein the semicondutor material of said first layer is removed on four sides perpendicular to said surface to form a narrow elongate strip of active material with narrow end edges and long side edges forming the active region of a resonant laser cavity which is embedded in said semiconductor material and wherein light is emitted from a narrow edge of said strip; (d) reflector means formed in said layers adjacent said light emitting end edge for reflecting the emitted light in a direction perpendicular to the plane of said p-n junction; and (e) electrode contacts electrically coupled to said p-n junction.
Claim 3
Dependent Claim
57 words
The device of claim 1 wherein the reflector means comprises a partly light transmissive surface disposed in a plane normal to the plane of said p-n junction and adjacent said narrow edge; and a light reflective surface disposed adjacent said light trnasmissive surface for reflecting light in a direction normal to the plane of said p-n junction.
Claim 4
Dependent Claim
45 words
The device of claim 1 wherein the reflective means comprises a light reflective surface formed at a 45° angle to the plane of said p-n junction to direct light emitted from said narrow edge in a direction normal to the plane of said p-n junction.
Claim 5
Dependent Claim
45 words
The device of claim 2 wherein the light reflective surface is in the form of a parabola and the surface of saisd parabola directly opposite the narrow edge of the strip is located about 2L away, wherein L is the focal distance of the parabola.
Claim 6
Dependent Claim
52 words
The device of claim 3 wherein a portion of the material underlying the region of the light emitting edge is removed to create a volume having an index of refraction different than the layer material to enable light reflections to occur at the interface and thereby provide feedback to the laser cavity.
Claim 7
Dependent Claim
29 words
The device of claim 1 wherein a plurality of embedded laser cavities are formed with reflector means adjacent thereto to provide a two-dimensional array of planar surface emitting lasers.
Claim 8
Dependent Claim
29 words
The device of claim 1 wherein the semiconductor substrate and the second layer is formed of a binary compound and the first layer is formed of a III-V alloy.
Claim 9
Dependent Claim
49 words
The device of claim 1 wherein the reflector means is formed by selectively etching the material from the layers adjacent the edge to form the approximate desired contour for the partly light transmissive surface and light reflective surface and then smoothing out the approximated contour to the desired shape.
Claim 10
Dependent Claim
28 words
The device of claim 8 wherein the smoothing is accomplished by heating the material for a sufficient time and at a temperature to cause migration of the material.
Claim 11
Dependent Claim
21 words
The device of claim 8 wherein the smoothing is accomplished by forming a smooth layer of material over the approximated surface.
Claim 12
Dependent Claim
103 words
In a monolithic buried heterostructure p-n junction semiconductor laser device having a thin active region embedded in semiconductor material wherein light is emitted from an edge thereof in a plane parallel to the plane of the p-n junction; the improvement comprising a light trnasmissive mirror surface formed on semiconductive material of said device opposite said edge and perpendicular to the plane of said p-n junction and a light reflective mirror surface formed in said semiconductive material of said device opposite to and adjacent said light transmissive mirror surface for reflecting light emitted from said edge in a plane perpendicular to said p-n junction.
Claim 13
Dependent Claim
103 words
In a monolithic buried heterostructure p-n junction semiconductor laser device having a thin active region embedded in semiconductor material wherein light is emitted from an edge thereof in a plane parallel to the plane of the p-n junction; the improvement comprising a light trnasmissive mirror surface formed on semiconductive material of said device opposite said edge and perpendicular to the plane of said p-n junction and a light reflective mirror surface formed in said semiconductive material of said device opposite to and adjacent said light transmissive mirror surface for reflecting light emitted from said edge in a plane perpendicular to said p-n junction.
Claim 14
Dependent Claim
17 words
The device of claim 11 wherein the light reflective surface is in the form of a parabola.
Claim 15
Dependent Claim
15 words
The device of claim 11 wherein the light reflective surface forms a three dimensional parabaloid.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-04 | 1991-07-06 | 1992-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-04 | 1995-07-06 | 1996-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-04 | 1999-07-06 | 2000-01-05 | $7700.00 | Window Closed / Lapsed |