US4717645A
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US
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Method and apparatus for forming resist pattern
Assignee: Toshiba Corp
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Filing: 1985-10-22
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Granted: 1988-01-05
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Expires: 2005-10-22
Abstract
Abstract A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of the electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.
Inventors
- 👤 Yoshihide Kato
- 👤 Kei Kirita
- 👤 Toshiaki Shinozaki
- 👤 Fumiaki Shigemitsu
- 👤 Kinya Usuda
- 👤 Takashi Tsuchiya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:15
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/16; G03F7/168; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
136 words
A method for forming a resist pattern, said method being used in lithography for semiconductor device fabrication and comprising the steps of: applying a resist material selected from the group consisting of a photoresist material, a far-ultraviolet sensitive resist material, an electron beam sensitive resist material, an X-ray sensitive resist material and an ion beam sensitive resist material to a rigid substrate to form a resist film thereon; baking said resist film; and, after baking, controlling the cooling of said resist film with a cooling device wherein said cooling is carried out at a rate higher than 10° C./sec; selectively irradiating a surface of said resist film with at least one member selected from the group consisting of electron beams, light rays, x-rays and ion beams; and developing said resist film to form a resist pattern.
Claim 2
Independent Claim
136 words
A method for forming a resist pattern, said method being used in lithography for semiconductor device fabrication and comprising the steps of: applying a resist material selected from the group consisting of a photoresist material, a far-ultraviolet sensitive resist material, an electron beam sensitive resist material, an X-ray sensitive resist material and an ion beam sensitive resist material to a rigid substrate to form a resist film thereon; baking said resist film; and, after baking, controlling the cooling of said resist film with a cooling device wherein said cooling is carried out at a rate higher than 10° C./sec; selectively irradiating a surface of said resist film with at least one member selected from the group consisting of electron beams, light rays, x-rays and ion beams; and developing said resist film to form a resist pattern.
Claim 3
Dependent Claim
43 words
A method according to claim 1, wherein the step of cooling said resist film is performed by using at least one of a liquid and a gas, the liquid and the gas substantially incapable of dissolving in or reacting with said resist film.
Claim 4
Dependent Claim
32 words
A method according to claim 2, wherein the liquid which is substantially incapable of dissolving in or reacting with said resist film comprises one of water and freon at a predetermined temperature.
Claim 5
Dependent Claim
34 words
A method according to claim 2, wherein the gas which is substantially incapable of dissolving in or reacting with said resist film comprises one of nitrogen gas and freon gas at a predetermined temperature.
Claim 6
Dependent Claim
29 words
A method according to claim 1, wherein the step of cooling said resist film is performed by one of a dipping method, a spraying method and a shower method.
Claim 7
Dependent Claim
46 words
A method according to claim 1, wherein the step of cooling said resist film is performed such that a control plate having a large heat capacity and kept at a predetermined cooling temperature is brought into one of contact relationship and adjacent relationship with said substrate.
Claim 8
Dependent Claim
21 words
A method according to claim 1, wherein said baking is performed at or above the glass transition temperature of the resist.
Claim 9
Dependent Claim
37 words
The method of claim 1, wherein said baking is performed at a temperature higher than the glass transition temperature of said resist film, and said cooling is performed to a temperature lower than said glass transition temperature.
Claim 10
Independent Claim
151 words
A method for forming a resist pattern, said method being used in lithography for semiconductor device fabrication and comprising the steps of: applying a resist material selected from the group consisting of a photoresist material, a far-ultraviolet sensitive resist material, an electron beam sensitive resist material, an X-ray sensitive resist material and an ion beam sensitive resist material to a substrate to form a resist film thereon; prebaking said resist film formed on said substrate; cooling said resist film; selectively irradiating a surface of said resist film with at least one member selected from the group consisting of electron beams, light rays, x-rays and ion beams; baking said resist film; and, after said baking, controlling the cooling of said resist film with a cooling device wherein said cooling is carried out at a rate higher than 10° C./sec; and developing said resist film to form a resist pattern on said substrate.
Claim 11
Independent Claim
151 words
A method for forming a resist pattern, said method being used in lithography for semiconductor device fabrication and comprising the steps of: applying a resist material selected from the group consisting of a photoresist material, a far-ultraviolet sensitive resist material, an electron beam sensitive resist material, an X-ray sensitive resist material and an ion beam sensitive resist material to a substrate to form a resist film thereon; prebaking said resist film formed on said substrate; cooling said resist film; selectively irradiating a surface of said resist film with at least one member selected from the group consisting of electron beams, light rays, x-rays and ion beams; baking said resist film; and, after said baking, controlling the cooling of said resist film with a cooling device wherein said cooling is carried out at a rate higher than 10° C./sec; and developing said resist film to form a resist pattern on said substrate.
Claim 12
Dependent Claim
43 words
A method according to claim 9, wherein the step of cooling said resist film is performed by using at least one of a liquid and a gas, the liquid and the gas substantially incapable of dissolving in or reacting with said resist film.
Claim 13
Dependent Claim
32 words
A method according to claim 10, wherein the liquid which is substantially incapable of dissolving in or reacting with said resist film comprises one of water and freon at a predetermined temperature.
Claim 14
Dependent Claim
34 words
A method according to claim 10, wherein the gas which is substantially incapable of dissolving in or reacting with said resist film comprises one of nitrogen gas and freon gas at a predetermined temperature.
Claim 15
Dependent Claim
29 words
A method according to claim 9, wherein the step of cooling said resist film is performed by one of a dipping method, a spraying method and a shower method.
Claim 16
Dependent Claim
46 words
A method according to claim 9, wherein the step of cooling said resist film is performed such that a control plate having a large heat capacity and kept at a predetermined cooling temperature is brought into one of contact relationship and adjacent relationship with said substrate.
Claim 17
Dependent Claim
21 words
A method according to claim 9, wherein said baking is performed at or above the glass transition temperature of the resist.
References Cited (Backward Citations)
US1472454A
Cited
US2094734A
Cited
US2122198A
Cited
GB1109521A
Cited
US3939000A
Cited
EP0001429A1
Cited
US4115120A
Cited
US4335957A
Cited
US4241165A
Cited
US4421844A
Cited
US4423137A
Cited
US4503335A
Cited
JPS58199349A
Cited
JPS6021522A
Cited
JPS60117627A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-04 | 1991-07-06 | 1992-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-04 | 1995-07-06 | 1996-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-04 | 1999-07-06 | 2000-01-05 | $7700.00 | Window Closed / Lapsed |