US4717447A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device by means of plasma etching
Assignee: US Philips Corp
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Filing: 1983-10-31
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Granted: 1988-01-05
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Expires: 2003-10-31
Abstract
Abstract A method of manufacturing a semiconductor device in which a layer of silicon nitride overlying a silicon oxide layer present on a substrate is etched by bringing it into contact with substantially only uncharged constituents of a plasma formed in a reactor to which a substantially oxygen-free gas or gas mixture is supplied. According to the invention, 0.1 to 25% by volume of a halogen different from fluorine, or of a compound containing a halogen different from fluorine, is added to this gas or gas mixture containing fluorine or a fluorine compound. Thus, a high etching selectivity of silicon nitride with respect to silicon oxide is obtained which does not vary during etching.
Inventors
- 👤 Jan Dieleman
- 👤 Franciscus H. M. Sanders
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 07:46
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
107 words
A method of manufacturing a semiconductor device comprising the steps of forming a plasma in a reactor, said plasma including fluorine or a fluorine compound, and said plasma being substantially oxygen-free, adding 0.1 to 25% by volume of a halogen different from fluorine to said plasma, wherein said halogen different from fluorine is a bromine or bromine compound, and wherein said bromine compound is CF 3 Br, and etching a layer of silicon nitride on a substrate with said plasma, wherein said plasma includes helium and 2 to 10% by volume of fluorine to which 0.5 to 2% by volume of said CF 3 BR is added.
Claim 2
Independent Claim
107 words
A method of manufacturing a semiconductor device comprising the steps of forming a plasma in a reactor, said plasma including fluorine or a fluorine compound, and said plasma being substantially oxygen-free, adding 0.1 to 25% by volume of a halogen different from fluorine to said plasma, wherein said halogen different from fluorine is a bromine or bromine compound, and wherein said bromine compound is CF 3 Br, and etching a layer of silicon nitride on a substrate with said plasma, wherein said plasma includes helium and 2 to 10% by volume of fluorine to which 0.5 to 2% by volume of said CF 3 BR is added.
Claim 3
Independent Claim
88 words
A method of manufacturing a semiconductor device comprising the steps of forming a plasma in a reactor, said plasma including fluorine or a fluorine compound, and said plasma being substantially oxygen-free, adding 0.1 to 25% by volume of a halogen different from fluorine to said plasma, wherein said halogen different from fluorine is a bromine or a bromine compound, and wherein said bromine compound is CF 3 Br, and etching a layer of silicon nitride on a substrate with said plasma, wherein said plasma includes NF 3 .
Claim 4
Independent Claim
88 words
A method of manufacturing a semiconductor device comprising the steps of forming a plasma in a reactor, said plasma including fluorine or a fluorine compound, and said plasma being substantially oxygen-free, adding 0.1 to 25% by volume of a halogen different from fluorine to said plasma, wherein said halogen different from fluorine is a bromine or a bromine compound, and wherein said bromine compound is CF 3 Br, and etching a layer of silicon nitride on a substrate with said plasma, wherein said plasma includes NF 3 .
Claim 5
Independent Claim
85 words
A method of manufacturing a semiconductor device comprising the steps of forming a plasma in a reactor, said plasma including fluorine or a fluorine compound, and said plasma being substantially oxygen-free, adding 0.1 to 25% by volume of a halogen different from fluorine to said plasma, and etching a layer of silicon nitride on a substrate with said plasma, wherein said plasma includes helium and 2 to 10% by volume of fluorine to which 0.5 to 2% by volume of CF 3 Br is added.
Claim 6
Independent Claim
85 words
A method of manufacturing a semiconductor device comprising the steps of forming a plasma in a reactor, said plasma including fluorine or a fluorine compound, and said plasma being substantially oxygen-free, adding 0.1 to 25% by volume of a halogen different from fluorine to said plasma, and etching a layer of silicon nitride on a substrate with said plasma, wherein said plasma includes helium and 2 to 10% by volume of fluorine to which 0.5 to 2% by volume of CF 3 Br is added.
Claim 7
Independent Claim
66 words
A method of manufacturing a semiconductor device comprising the steps of forming a plasma in a reactor, said plasma including fluorine or a fluorine compound, and said plasma being substantially oxygen-free, adding 0.1 to 25% by volume of a halogen different from fluorine to said plasma, and etching a layer of silicon nitride on a substrate with said plasma, wherein said plasma includes NF 3 .
Claim 8
Independent Claim
66 words
A method of manufacturing a semiconductor device comprising the steps of forming a plasma in a reactor, said plasma including fluorine or a fluorine compound, and said plasma being substantially oxygen-free, adding 0.1 to 25% by volume of a halogen different from fluorine to said plasma, and etching a layer of silicon nitride on a substrate with said plasma, wherein said plasma includes NF 3 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-01-04 | 1991-07-06 | 1992-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-01-04 | 1995-07-06 | 1996-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-01-04 | 1999-07-06 | 2000-01-05 | $7700.00 | Window Closed / Lapsed |