US4710790A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MOS transistor
Assignee: Mitsubishi Electric Corp
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Filing: 1984-07-03
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Granted: 1987-12-01
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Expires: 2004-07-03
Abstract
Abstract A gate electrode (4') of a MOS transistor is formed in a depression (16) provided in a substrate (1). Source and drain regions (6 and 7) of the MOS transistor are formed in the substrate (1) to be opposed to each other with the gate electrode (4') being located therebetween.
Inventors
- 👤 Tatsuo Okamoto
- 👤 Kouji Eguchi
- 👤 Saburou Oosaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:52
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D64/00; H10D64/01; H10D64/025; H10D64/027
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
108 words
A MOS transistor comprising: a semiconductor substrate having a depression formed on one major surface thereof; an insulating film formed at least on an inner bottom surface and a side surface of said depression; a gate electrode formed in said depression coated with said insulating film; and a source region and a drain region formed in said major surface of said semiconductor substrate so as to be opposed to each other with said depression being located therebetween, wherein substantially the entire upper surface of said gate electrode is generally flat and approximately even with said major surface of said semiconductor substrate and contained substantially entirely within said depression.
Claim 2
Dependent Claim
108 words
A MOS transistor comprising: a semiconductor substrate having a depression formed on one major surface thereof; an insulating film formed at least on an inner bottom surface and a side surface of said depression; a gate electrode formed in said depression coated with said insulating film; and a source region and a drain region formed in said major surface of said semiconductor substrate so as to be opposed to each other with said depression being located therebetween, wherein substantially the entire upper surface of said gate electrode is generally flat and approximately even with said major surface of said semiconductor substrate and contained substantially entirely within said depression.
Claim 3
Dependent Claim
73 words
A MOS transistor in accordance with claim 1, wherein a portion of said insulating film on the inner side surface of said depression located between said gate electrode and said source region and a portion of said insulating film on the inner side surface of said depression located between said gate electrode and said drain region are relatively thicker than a portion of said insulating film on the bottom surface of said depression.
Claim 4
Dependent Claim
22 words
A MOS transistor in accordance with claim 2, wherein said relatively thick portions of said insulating film are formed by anisotropic etching.
Claim 5
Dependent Claim
30 words
A MOS transistor in accordance with claim 1, further comprising an impurity doping layer formed in a portion of said semiconductor substrate located under the bottom surface of said depression.
Claim 6
Dependent Claim
63 words
A MOS transistor in accordance with claim 1, further comprising: an insulation layer formed on said major surface of said semiconductor substrate including the surface of said gate electrode, said insulating layer having a contact hole being provided therein; and a wiring made in contact with a desired portion of said gate electrode and said source and drains regions through said contact hole.
References Cited (Backward Citations)
US4243997A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-30 | 1991-06-01 | 1991-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-30 | 1995-06-01 | 1995-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-30 | 1999-06-01 | 1999-12-01 | $7700.00 | Window Closed / Lapsed |