Gradient layer panchromatic photoreceptor

Claim 1

A photoreceptor comprising selenium-arsenic alloys, characterized by a gradient concentration of arsenic increasing from the bottom surface which interfaces a substrate to the top surface of the photoreceptor such that the arsenic concentration is about 5 wt. % at a depth of about 5 to 10 microns from the top surface of the photoreceptor and is about 35 to 40 wt. % at the top surface of the photoreceptor, wherein said photoreceptor is prepared by vapor deposition of a mixture of selenium-arsenic alloys, comprising about 74.0 wt. % or more of a selenium-arsenic alloy containing about 0 to 1.05 wt. % arsenic, and about 26.0 wt. % or less of a selenium-arsenic alloy containing about 10.0 to 25.0 wt. % arsenic and a selenium-arsenic alloy containing about 35.0 to 40.0 wt. % arsenic, onto a substrate wherein the mandrel holding the substrate is maintained at a temperature in the range of about 70°-80° C. during the entire evaporation procedure.