US4708904A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and a method of manufacturing the same
Assignee: Mitsubishi Electric Corp
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Filing: 1985-11-15
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Granted: 1987-11-24
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Expires: 2005-11-15
Abstract
Abstract A semiconductor device and a method of manufacturing the same which comprises a semiconductor substrate and a conductive region formed thereon in multilayer structure of a film of refractory metal or refractory metal silicide inferior in corrosion resistance against a solution containing hydrofluoric acid and a film of refractory metal silicide excellent in corrosion resistance against the solution containing hydrofluorine acid and low electric resistance formed on the same.
Inventors
- 👤 Masahiro Shimizu
- 👤 Tatsuo Okamoto
- 👤 Katsuhiro Tsukamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:28
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/663; H10P; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10T; Y10T428/00; Y10T428/24; Y10T428/24802; Y10T428/24917
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
78 words
A semiconductor device formed by a metal-oxide semiconductor element, said metal-oxide semiconductor element comprising a semiconductor substrate and a conductive region formed on said semiconductor substrate, said conductive region including: a first conductive layer containing at least a first refractory metal; and a second conductive layer formed on said first conductive layer by a refractory metal silicide formed of a different refractory metal than said first refractory metal and having corrosion resistance against a solution containing hydrofluoric acid.
Claim 2
Dependent Claim
78 words
A semiconductor device formed by a metal-oxide semiconductor element, said metal-oxide semiconductor element comprising a semiconductor substrate and a conductive region formed on said semiconductor substrate, said conductive region including: a first conductive layer containing at least a first refractory metal; and a second conductive layer formed on said first conductive layer by a refractory metal silicide formed of a different refractory metal than said first refractory metal and having corrosion resistance against a solution containing hydrofluoric acid.
Claim 3
Dependent Claim
22 words
A semiconductor device in accordance with claim 1, wherein said second conductive layer is smaller in thickness than said first conductive layer.
Claim 4
Dependent Claim
21 words
A semiconductor device in accordance with claim 1, wherein said conductive region is a gate electrode of said metal-oxide semiconductor element.
Claim 5
Dependent Claim
15 words
A semiconductor device in accordance with claim 1, wherein said conductive region is an interconnection.
Claim 6
Dependent Claim
23 words
A semiconductor device in accordance with claim 1, wherein said conductive region is a gate electrode and interconnection of said metal-oxide semiconductor element.
Claim 7
Dependent Claim
17 words
A semiconductor device in accordance with claim 1, wherein said semiconductor device is an integrated circuit device.
Claim 8
Dependent Claim
23 words
A semiconductor device in accordance with claim 1, wherein substance forming said first conductive layer is any of molybdenum, tungsten, titanium or tantalum.
Claim 9
Dependent Claim
22 words
A semiconductor device in accordance with claim 1, wherein substance forming said first conductive layer is either titanium silicide or tantalum silicide.
Claim 10
Dependent Claim
22 words
A semiconductor device in accordance with claim 1, wherein substance forming said second conductive layer is either molybdenum silicide or tungsten silicide.
Claim 11
Dependent Claim
46 words
A semiconductor device in accordance with claim 1, wherein thickness of said first conductive layer is selected to be within a range of 1000 to 5000 Å and thickness of said second conductive layer is selected to be within a range of 100 to 500 Å.
Claim 12
Independent Claim
199 words
A method of manufacturing a semiconductor device formed by a metal-oxide semiconductor element having a semiconductor substrate, said method comprising: a first step of forming by deposition a first conductive layer containing at least a first refractory metal and having a high melting point on said semiconductor substrate; a second step of forming by deposition on the first conductive layer a second conductive layer by a second refractory metal silicide smaller in thickness than said first conductive layer and having corrosion resistance against a solution containing hydrofluoric acid on said first conductive layer; a third step of etching away portions of said first and second conductive layers to form a desired pattern in predetermined regions of said first and second layers; a fourth step of forming an oxide fim entirely over the exposed substrate and conductive layer surfaces; a fifth step of etching contact holes through said oxide film in predetermined positions on said semiconductor substrate; a sixth step of cleansing the exposed surface of said substrate through said contact holes using a solution containing hydrofluoric acid; and a seventh step of forming by deposition an electrode for making electrical contact with said semiconductor substrate through said contact hole.
Claim 13
Independent Claim
199 words
A method of manufacturing a semiconductor device formed by a metal-oxide semiconductor element having a semiconductor substrate, said method comprising: a first step of forming by deposition a first conductive layer containing at least a first refractory metal and having a high melting point on said semiconductor substrate; a second step of forming by deposition on the first conductive layer a second conductive layer by a second refractory metal silicide smaller in thickness than said first conductive layer and having corrosion resistance against a solution containing hydrofluoric acid on said first conductive layer; a third step of etching away portions of said first and second conductive layers to form a desired pattern in predetermined regions of said first and second layers; a fourth step of forming an oxide fim entirely over the exposed substrate and conductive layer surfaces; a fifth step of etching contact holes through said oxide film in predetermined positions on said semiconductor substrate; a sixth step of cleansing the exposed surface of said substrate through said contact holes using a solution containing hydrofluoric acid; and a seventh step of forming by deposition an electrode for making electrical contact with said semiconductor substrate through said contact hole.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-11-23 | 1991-05-25 | 1991-11-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-11-23 | 1995-05-25 | 1995-11-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-11-23 | 1999-05-25 | 1999-11-24 | $7700.00 | Window Closed / Lapsed |