Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
75 words
A process for producing printed circuits comprising the steps of: sputtering a conductor onto an insulating substrate surface and the walls of through holes therein; applying a layer of photoresist to the insulating substrate surface; photolithographically creating channels in the photoresist; depositing a conductor in the channels and on the walls of the through holes by electroplating; stripping the photoresist; and differentially etching to remove the sputtered conductor exposed by the stripping of the photoresist.
Claim 2
Dependent Claim
75 words
A process for producing printed circuits comprising the steps of: sputtering a conductor onto an insulating substrate surface and the walls of through holes therein; applying a layer of photoresist to the insulating substrate surface; photolithographically creating channels in the photoresist; depositing a conductor in the channels and on the walls of the through holes by electroplating; stripping the photoresist; and differentially etching to remove the sputtered conductor exposed by the stripping of the photoresist.
Claim 3
Dependent Claim
18 words
The process of claim 1 wherein the steps are simultaneously implemented on both sides of the insulating substrate.
Claim 4
Dependent Claim
107 words
A process for producing printed circuits comprising the steps of: laminating a sacrificial layer to an insulating substrate surface; drilling through holes in the insulating substrate; etching the sacrificial layer off of the insulating substrate surface; sputtering a conductor onto the insulating substrate surface and the walls of the through holes therein; applying a layer of photoresist to the insulating substrate surface; exposing and developing the photoresist to create channels in the photoresist; depositing a conductor in the channels and on the walls of the through holes by electroplating; stripping the photoresist; and differentially etching to remove the sputtered conductor exposed by the stripping of the photoresist.
Claim 5
Dependent Claim
107 words
A process for producing printed circuits comprising the steps of: laminating a sacrificial layer to an insulating substrate surface; drilling through holes in the insulating substrate; etching the sacrificial layer off of the insulating substrate surface; sputtering a conductor onto the insulating substrate surface and the walls of the through holes therein; applying a layer of photoresist to the insulating substrate surface; exposing and developing the photoresist to create channels in the photoresist; depositing a conductor in the channels and on the walls of the through holes by electroplating; stripping the photoresist; and differentially etching to remove the sputtered conductor exposed by the stripping of the photoresist.
Claim 6
Dependent Claim
25 words
The process of claim 3 wherein the steps, except for the drilling of through holes, are simultaneously implemented on both sides of the insulating substrate.
Claim 7
Dependent Claim
105 words
A process for producing printed circuits comprising the steps of: laminating a sacrificial copper layer to the surface of a prepreg substrate; drilling through holes in the substrate; etching the sacrificial layer off of the substrate surface; sputtering copper onto the substrate surface and the walls of the through holes therein; applying a layer of photoresist to the substrate surface; exposing and developing the photoresist to create channels in the photoresist; depositing more copper in the channels and on the walls of the through holes by electroplating; stripping the photoresist; and differentially etching to remove the sputtered copper exposed by the stripping of the photoresist.
Claim 8
Dependent Claim
105 words
A process for producing printed circuits comprising the steps of: laminating a sacrificial copper layer to the surface of a prepreg substrate; drilling through holes in the substrate; etching the sacrificial layer off of the substrate surface; sputtering copper onto the substrate surface and the walls of the through holes therein; applying a layer of photoresist to the substrate surface; exposing and developing the photoresist to create channels in the photoresist; depositing more copper in the channels and on the walls of the through holes by electroplating; stripping the photoresist; and differentially etching to remove the sputtered copper exposed by the stripping of the photoresist.
Claim 9
Dependent Claim
24 words
The process of claim 5 wherein the steps, except for the drilling of through holes, are simultaneously implemented on both sides of the substrate.
Claim 10
Dependent Claim
31 words
The process of claim 5 wherein said lamination of the sacrificial layer occurs at approximately 190° C. to produce a layer of copper of approximately 0.0175 to 0.03 mm in thickness.
Claim 11
Dependent Claim
19 words
The process of claim 5 wherein said etch to remove the sacrificial layer occurs in a high-pressure spray system.
Claim 12
Dependent Claim
29 words
The process of claim 5 wherein said sputtering of copper occurs in a magnetron-enhanced high-power cathode sputtering system to produce a layer approximately 80 to 500 nm in thickness.
Claim 13
Dependent Claim
19 words
The process of claim 9 wherein said sputtering of copper produces a layer of approximately 200 nm in thickness.
Claim 14
Dependent Claim
23 words
The process of claim 5 wherein said application of the photoresist occurs by lamination at a temperature of approximately 110° to 120° C.
Claim 15
Dependent Claim
21 words
The process of claim 11 wherein the photoresist is a negative photoresist comprising polyethylene terephthalate, benzophenone, and an acryl acid/styrol polymer.
Claim 16
Dependent Claim
17 words
The process of claim 5 wherein said developing of the photoresist occurs in an aqueous alkaline solution.
Claim 17
Dependent Claim
40 words
The process of claim 5 wherein said deposition of copper by electroplating occurs in a bath containing 15 to 25 g/l Cu 2+ , 170 to 200 g/l H 2 SO 4 , 40 to 60 mg/l Cl - .
Claim 18
Dependent Claim
33 words
The process of claim 14 wherein said deposition of copper by electroplating occurs at a current density of approximately 2.5 A/dm 2 to yield a deposition rate of approximately 25 to 30 microns/h.
Claim 19
Dependent Claim
17 words
The process of claim 5 wherein said stripping of the photoresist occurs in an aqueous alkaline solution.
Claim 20
Dependent Claim
34 words
The process of claim 5 wherein said differential etching of the sputtered copper occurs in a solution containing approximately 100 to 130 g/l sodium peroxodisulphate and approximately 60 to 90 ml/l concentrated sulphuric acid.