US4701774A
Expired / Lapsed
US
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Light emitting semiconductor device
Assignee: Toshiba Corp
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Filing: 1985-12-18
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Granted: 1987-10-20
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Expires: 2005-12-18
Abstract
Abstract In a carrier injection type light emitting semiconductor device with a QW structure, a p-type impurity doped layer and/or an n-type impurity doped layer are inserted into an optical wave guide layer so as to cancel an internal electric field in an active region.
Inventors
- 👤 Paul W. A. McIlroy
- 👤 Atsushi Kurobe
- 👤 Hideto Furuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:07
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/305; H01S5/343; H01S5/34313; H01S5/3432
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
113 words
A light emitting semiconductor device comprising: a multilayered semiconductor body in which an active region having at least one quantum well is formed; an n-type semiconductor layer, disposed adjacent to one side of said multilayered semiconductor body, for injecting electrons into said active region; a p-type semiconductor layer, disposed adjacent to the other side of said multilayered semiconductor body, for injecting holes into said active region; at least one p-type impurity doped layer formed in said multilayered semiconductor body, disposed between said n-type semiconductor layer and said active region; and at least one n-type impurity doped layer formed in said multilayered semiconductor body, disposed between said p-type semiconductor layer and said active region.
Claim 2
Dependent Claim
113 words
A light emitting semiconductor device comprising: a multilayered semiconductor body in which an active region having at least one quantum well is formed; an n-type semiconductor layer, disposed adjacent to one side of said multilayered semiconductor body, for injecting electrons into said active region; a p-type semiconductor layer, disposed adjacent to the other side of said multilayered semiconductor body, for injecting holes into said active region; at least one p-type impurity doped layer formed in said multilayered semiconductor body, disposed between said n-type semiconductor layer and said active region; and at least one n-type impurity doped layer formed in said multilayered semiconductor body, disposed between said p-type semiconductor layer and said active region.
Claim 3
Dependent Claim
69 words
A device according to claim 1, wherein said multilayered semiconductor body is an optical wave guide in which said active region is formed, said n-type and p-type semiconductor layers are cladding layers having a wider band gap than that of said optical wave guide, and said at least one p-type impurity doped layer and said at least one n-type impurity doped layer is formed in said optical wave guide.
Claim 4
Dependent Claim
76 words
A device according to claim 1, wherein said multilayered semiconductor body is an optical wave guide in which the band gap becomes wider with increasing distance from said active region, said n-type and p-type semiconductor layers are cladding layers having a wider band gap than that of said optical wave guide, and said at least one p-type impurity doped layer and said at least one n-type impurity doped layer is formed in said optical wave guide.
Claim 5
Dependent Claim
81 words
A device according to claim 1, wherein said multilayered semiconductor body comprises an optical wave guide and portions of cladding layers having a wider band gap than that of said optical wave guide, said optical wave guide having said active region formed therein, said portions of cladding layers sandwiching said optical wave guide therebetween, and wherein said at least one p-type impurity doped layer and said at least one n-type impurity doped layer is formed in said portions of cladding layers.
Claim 6
Dependent Claim
90 words
A light emitting semiconductor device comprising: a multilayered semiconductor body in which an active region having one or more quantum wells is formed; an n-type semiconductor layer, disposed adjacent to one side of said multilayered semiconductor body, for injecting electrons into said active region; a p-type semiconductor layer, disposed adjacent to the other side of said multilayered semiconductor body, for injecting holes into said active region; and at least one p-type impurity doped layer formed in said multilayered semiconductor body, disposed between said n-type semiconductor layer and said active region.
Claim 7
Dependent Claim
90 words
A light emitting semiconductor device comprising: a multilayered semiconductor body in which an active region having one or more quantum wells is formed; an n-type semiconductor layer, disposed adjacent to one side of said multilayered semiconductor body, for injecting electrons into said active region; a p-type semiconductor layer, disposed adjacent to the other side of said multilayered semiconductor body, for injecting holes into said active region; and at least one p-type impurity doped layer formed in said multilayered semiconductor body, disposed between said n-type semiconductor layer and said active region.
Claim 8
Dependent Claim
60 words
A device according to claim 5, wherein said multilayered semiconductor body is an optical wave guide in which said active region is formed, said n-type and p-type semiconductor layers are cladding layers having a wider band gap than that of said optical wave guide, and said at least one p-type impurity doped layer is formed in said optical wave guide.
Claim 9
Dependent Claim
67 words
A device according to claim 5, wherein said multilayered semiconductor body is an optical wave guide in which the band gap becomes wider with increasing distance from said active region, said n-type and p-type semiconductor layers are cladding layers having a wider band gap than that of said optical wave guide, and said at least one p-type impurity doped layer is formed in said optical wave guide.
Claim 10
Dependent Claim
72 words
A device according to claim 5, wherein said multilayered semiconductor body comprises an optical wave guide and portions of cladding layers having a wider band gap than that of said optical wave guide, said optical wave guide having said active region formed therein, said portions of cladding layers sandwiching said optical wave guide therebetween, and wherein said at least one p-type impurity doped layer is formed in said portions of cladding layers.
Claim 11
Dependent Claim
90 words
A light emitting semiconductor device comprising: a multilayered semiconductor body in which an active region having one or more guantum wells is formed; an n-type semiconductor layer, disposed adjacent to one side of said multilayered semiconductor body, for injecting electrons into said active region; a p-type semiconductor layer, disposed adjacent to the other side of said multilayered semiconductor body, for injecting holes into said active region; and at least one n-type impurity doped layer formed in said multilayered semiconductor body, disposed between said p-type semiconductor layer and said active region.
Claim 12
Dependent Claim
90 words
A light emitting semiconductor device comprising: a multilayered semiconductor body in which an active region having one or more guantum wells is formed; an n-type semiconductor layer, disposed adjacent to one side of said multilayered semiconductor body, for injecting electrons into said active region; a p-type semiconductor layer, disposed adjacent to the other side of said multilayered semiconductor body, for injecting holes into said active region; and at least one n-type impurity doped layer formed in said multilayered semiconductor body, disposed between said p-type semiconductor layer and said active region.
Claim 13
Dependent Claim
60 words
A device according to claim 9, wherein said multilayered semiconductor body is an optical wave guide in which said active region is formed, said n-type and p-type semiconductor layers are cladding layers having a wider band gap than that of said optical wave guide, and said at least one n-type impurity doped layer is formed in said optical wave guide.
Claim 14
Dependent Claim
67 words
A device according to claim 5, wherein said multilayered semiconductor body is an optical wave guide in which the band gap becomes wider with increasing distance from said active region, said n-type and p-type semiconductor layers are cladding layers having a wider band gap than that of said optical wave guide, and said at least one n-type impurity doped layer is formed in said optical wave guide.
Claim 15
Dependent Claim
72 words
A device according to claim 5, wherein said multilayered semiconductor body comprises an optical wave guide and portions of cladding layers having a wider band gap than that of said optical wave guide, said optical wave guide having said active region formed therein, said portions of cladding layers sandwiching said optical wave guide therebetween, and wherein said at least one n-type impurity doped layer is formed in said portions of cladding layers.
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