US4701342A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Negative resist with oxygen plasma resistance
Assignee: Nokia Bell Labs
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Filing: 1986-03-06
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Granted: 1987-10-20
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Expires: 2006-03-06
Abstract
Abstract Polymers formed from monomers such as chloromethyl styrene and trimethylsilylmethyl methacrylate form negative-acting resists that are sensitive to exposure by electron beam and deep UV radiation. These materials are particularly useful in bilevel resist applications for fabricating masks or for device processing.
Inventors
- 👤 Anthony E. Novembre
- 👤 Elsa Reichmanis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 23:06
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
103 words
A process for fabricating an article comprising the steps of forming a negative-acting radiation-sensitive region on a substrate, patterning at least a portion of said region, and further processing said substrate CHARACTERIZED IN THAT said region comprises a composition formed by a polymerization process employing (1) at least one material represented by the formula: ##STR7## where n=1, 2 or 3 and x, y, and z are individual methyl or ethyl, and (2) at least one material represented by the formula: ##STR8## where A is a naphthyl or phenyl moiety, and E is chosen from the group consisting of chloro, chloromethyl, dichloromethyl, and bromomethyl.
Claim 2
Dependent Claim
103 words
A process for fabricating an article comprising the steps of forming a negative-acting radiation-sensitive region on a substrate, patterning at least a portion of said region, and further processing said substrate CHARACTERIZED IN THAT said region comprises a composition formed by a polymerization process employing (1) at least one material represented by the formula: ##STR7## where n=1, 2 or 3 and x, y, and z are individual methyl or ethyl, and (2) at least one material represented by the formula: ##STR8## where A is a naphthyl or phenyl moiety, and E is chosen from the group consisting of chloro, chloromethyl, dichloromethyl, and bromomethyl.
Claim 3
Dependent Claim
11 words
The process of claim 1 wherein said article comprises a device.
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein said article comprises a lithographic mask.
Claim 5
Dependent Claim
14 words
The process of claim 1 wherein said composition is formed by a copolymerization process.
Claim 6
Dependent Claim
21 words
The process of claim 1 wherein a region capable of selective removal is interposed between said radiation-sensitive region and said substrate.
Claim 7
Dependent Claim
27 words
The process of claim 5 wherein said patterning comprises the step of subjecting said region to said radiation and then subjecting said region to a plasma discharge.
Claim 8
Dependent Claim
21 words
The process of claim 6 wherein said region capable of selective removal undergoes said removal by being subjected to a solvent.
Claim 9
Dependent Claim
14 words
The process of claim 6 wherein said plasma discharge comprises an oxygen plasma discharge.
References Cited (Backward Citations)
US4551417A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1990-10-19 | 1991-04-20 | 1991-10-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-10-19 | 1995-04-20 | 1995-10-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-10-19 | 1999-04-20 | 1999-10-20 | $7700.00 | Window Closed / Lapsed |