Molecular beam generator using thermal decomposition for manufacturing semiconductors by epitaxy

Claim 1

In a molecular beam generator using thermal decomposition for manufacturing semiconductors by epitaxy, said generator comprising: a source (22) of primary gas capable of forming various secondary molecules by thermal decomposition, said molecules being suitable for being epitaxially deposited on a crystalline substrate in order to contribute to the formation of a semiconductor layer; a thermal decomposition duct (11) made of refractory walls with an inlet (11b) for receiving said primary gas, a longitudinal succession of interior transversal partitions (6a, 6b, 6c, 6d) which form a succession of chambers communicating via a succession of communication orifices (6p, 6q, 6r, 6s), for increasing the number of shocks between the molecules of the primary gas and the walls of said duct, and an outlet (11a); a heater filament (30) surrounding said thermal decomposition duct and passing electric current to substantially uniformly heat the walls of said duct to a temperature suitable for said shocks selectively forming these of said secondary molecules which contribute most effectively to the formation of said semiconductor layer; and beam-forming director means (6s, 11a) disposed downstream from said thermal decomposition duct in order to form a molecular beam of said secondary molecules which is directed towards such a substrate in an enclosure evacuated of gas; the improvement wherein said thermal decomposition duct is in the form of a substantially cylindrical elongate body having plane discs (6a, 6b, 6c, 6d) forming said interior partitions, said body and discs being made of a boron nitride material, said communication orifices through said partitions being holes (6p, 6q, 6r, 6s) through said discs, wherein successive holes (6p, 6q, 6r, 6s) are circumferentially offset, the cross-sectional areas of said holes being less than one-fourth of the inside cross-sectional area of said body, and wherein beam-forming director means is formed by a plurality of said peripheral holes (6s) angularly equally distributed over the periphery of the said disc (6d) most remote from said source and a terminal length (11a) of the body of said thermal decomposition duct (11) downstream from said last disc, thereby shaping a substantially uniform molecular beam of limited angular extent from said axis.