Photolithographic etching process using organosilicon polymer composition

Claim 1

A process for producing an image which comprises providing on a substrate a layer of an ultraviolet light-sensitive negative resist composition consisting essentially of: (a) polysiloxane having polymerizable ethylenically unsaturated groups wherein said polysiloxane contains about 0.1% to about 20% by weight of ethylenically unsaturated groups per molecule and wherein said polysiloxane also contains phenyl or substituted phenyl groups, and (b) 2,2-dimethoxy-2-phenyl acetophenone in an amount sufficient to improve the sensitivity to ultraviolet light radiation, and being at least about 0.1% by weight based upon the polysiloxane. imagewise exposing the layer of light-sensitive composition to imaging ultraviolet radiation in a desired pattern and developing the exposed layer, thereby leaving the desired pattern of the layer of light-sensitive negative resist composition remaining on the substrate, and then etching the substrate by a dry etching process using the pattern of the layer of light-sensitive negative resist composition as the mask.