US4692998A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for fabricating semiconductor components
Assignee: MA-COM Inc A MA CORP
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Filing: 1985-01-12
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Granted: 1987-09-15
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Expires: 2005-01-12
Abstract
Abstract A process for the fabrication of semiconductor components and in particular a process in which the components are fabricated with a controlled spacing of etched channels. The process is in particular utilized in fabricating a monolithic array of elements such as a pin diode array. The process of the present invention combines the use of an anisotropic silicon etching process for the desired device geometries with a means of defining all device surface topology by substantially a single photomask thus eliminating critical mask alignment. A second embodiment of the invention is also described employing fewer layers of deposition with a double photomask step.
Inventors
- 👤 Albert L. Armstrong
- 👤 Joel L. Goodrich
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:30
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/01; H10D8/50; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; H10P50/69; H10P50/691; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/05; Y10S257/00; Y10S257/926
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
193 words
A process for fabricating semiconductor devices comprising the steps of; providing a semiconductor substrate in which will be defined an I-region separated by first and second channel defining areas, disposing a layer of a dielectric material on said substrate including one and another segments thereof, removing portions of said dielectric material in I-regions of the substrate, disposing a second layer of a dielectric material over said substrate in said I-region, removing at least said one segment of the first dielectric material in the first channel defining area of the substrate, removing the substrate in said first channel defining area to define a first exposed substrate channel, doping the exposed substrate in said first substrate channel with a first dopant, disposing a protective layer over said doped first substrate channel, removing at least said another segment of the first dielectric layer of the substrate in said second channel defining area of the substrate, removing the substrate in said second channel defining area to define a second exposed substrate channel, doping the exposed substrate in said second substrate channel with a second dopant, and depositing a metallic layer in said first and second substrate channels.
Claim 2
Dependent Claim
193 words
A process for fabricating semiconductor devices comprising the steps of; providing a semiconductor substrate in which will be defined an I-region separated by first and second channel defining areas, disposing a layer of a dielectric material on said substrate including one and another segments thereof, removing portions of said dielectric material in I-regions of the substrate, disposing a second layer of a dielectric material over said substrate in said I-region, removing at least said one segment of the first dielectric material in the first channel defining area of the substrate, removing the substrate in said first channel defining area to define a first exposed substrate channel, doping the exposed substrate in said first substrate channel with a first dopant, disposing a protective layer over said doped first substrate channel, removing at least said another segment of the first dielectric layer of the substrate in said second channel defining area of the substrate, removing the substrate in said second channel defining area to define a second exposed substrate channel, doping the exposed substrate in said second substrate channel with a second dopant, and depositing a metallic layer in said first and second substrate channels.
Claim 3
Dependent Claim
23 words
A process for fabricating semiconductor devices as set forth in claim 1 wherein the first layer is a layer deposited of silicon nitride.
Claim 4
Dependent Claim
32 words
A process for fabricating semiconductor devices as set forth in claim 1 wherein the step of depositing metallic layers includes depositing of a bonding layer followed by metallic plating of a layer.
Claim 5
Dependent Claim
23 words
A process for fabricating semiconductor devices as set forth in claim 2 wherein the second layer is a layer grown of silicon dioxide.
Claim 6
Dependent Claim
20 words
A process for fabricating semiconductor devices as set forth in claim 3 including the step of lapping the metallic plating.
Claim 7
Dependent Claim
24 words
A process for fabricating semiconductor devices as set forth in claims 3 or 5 including etching of the metallic plating to expose the I-regions.
Claim 8
Dependent Claim
32 words
A process for fabricating semiconductor devices as set forth in claim 6 wherein the etching of the metallic layer and metallic plating exposes the first dielectric layer which functions as a passivation.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-14 | 1991-03-16 | 1991-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-14 | 1995-03-16 | 1995-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-14 | 1999-03-16 | 1999-09-15 | $7700.00 | Window Closed / Lapsed |