US4692903A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Memory loss protection circuit
Assignee: Zenith Electronics LLC
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Filing: 1985-07-15
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Granted: 1987-09-08
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Expires: 2005-07-15
Abstract
Abstract In a data processing system, an input line voltage is provided to a series voltage regulator which, in turn, provides well defined DC voltages to various logic devices including a system controller, such as a microprocessor. System controller operation is degraded by variations in the DC voltage provided thereto, generally resulting in the erroneous writing of data into a nonvolatile memory in the data processing system when the DC voltage provided to the system controller drops below a given voltage level caused by, for example, variations in the input line voltage. The input line voltage to the data processing system is monitored across the series voltage regulator for deselecting/write disabling the memory in the event the input voltage drops below a predetermined level, such as due to power transients, to prevent loss of data stored in the memory. By monitoring the system input voltage across the series voltage regulator, the ratio of input voltage change to the input voltage level is increased to facilitate detection of low voltage states. By thus increasing the relative value of an input voltage drop required for deselection/write disabling of the nonvolatile memory, low voltage detection circuitry design and operating parameters as well as component ratings may be relaxed.
Inventors
- 👤 Arthur N. Borg
- 👤 Giora Bar-Hai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:30
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/143; G11C7/00; G11C7/24; H; H02; H02H; H02H3/00; H02H3/24; H02H3/243
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
175 words
For use in a data processing system energized by a line voltage subject to transients, wherein data is written into a nonvolatile memory for storage therein and is read from the nonvolatile memory under the control of a system controller coupled to the nonvolatile memory, a memory protection circuit for preventing the alteration of data stored in the nonvolatile memory arising from line voltage transients comprising: voltage regulation means coupled to the system controller and responsive to the line voltage for providing a regulated DC voltage to the system controller; voltage level sensing means coupled across said voltage regulation means for detecting a decrease in the line voltage below a predetermined threshold level and for outputting a control signal in response thereto; and decoding means coupled to the nonvolatile memory and to said voltage level sensing means and responsive to said control signal for deselecting and write disabling the nonvolatile memory when the voltage across said voltage regulation means drops below said predetermined threshold level in preventing the writing of data into the nonvolatile memory.
Claim 2
Dependent Claim
175 words
For use in a data processing system energized by a line voltage subject to transients, wherein data is written into a nonvolatile memory for storage therein and is read from the nonvolatile memory under the control of a system controller coupled to the nonvolatile memory, a memory protection circuit for preventing the alteration of data stored in the nonvolatile memory arising from line voltage transients comprising: voltage regulation means coupled to the system controller and responsive to the line voltage for providing a regulated DC voltage to the system controller; voltage level sensing means coupled across said voltage regulation means for detecting a decrease in the line voltage below a predetermined threshold level and for outputting a control signal in response thereto; and decoding means coupled to the nonvolatile memory and to said voltage level sensing means and responsive to said control signal for deselecting and write disabling the nonvolatile memory when the voltage across said voltage regulation means drops below said predetermined threshold level in preventing the writing of data into the nonvolatile memory.
Claim 3
Dependent Claim
45 words
The memory protection circuit of claim 1 wherein said voltage level sensing means includes a transistor, wherein said transistor is rendered nonconductive when the voltage across said regulation means is less than said predetermined threshold level for providing said control signal to said decoding means.
Claim 4
Dependent Claim
58 words
The memory protection circuit of claim 2 wherein said voltage level sensing means further includes a voltage divider network coupled across said transistor and said voltage regulation means for dividing down the voltage across said voltage regulation means in increasing the ratio of said decrease in the line voltage below a predetermined threshold level and the line voltage.
Claim 5
Dependent Claim
43 words
The memory protection circuit of claim 1 wherein said decoding means includes first and second decoders responsive to said control signal for respectively deselecting and write disabling the nonvolatile memory when the voltage across said regulation means drops below said predetermined threshold level.
Claim 6
Dependent Claim
19 words
The memory protection circuit of claim 4 wherein the nonvolatile memory comprises an electrically erasable programmable read only memory.
Claim 7
Dependent Claim
14 words
The memory protection circuit of claim 5 wherein the system controller comprises a microprocessor.
Claim 8
Dependent Claim
221 words
For use in a data processing system energized by a line voltage subject to transients, wherein data is written into a nonvolatile memory for storage therein and is read from the nonvolatile memory under the control of a system controller coupled to the nonvolatile memory, a memory protection circuit for preventing the alteration of data stored in the nonvolatile memory arising from line voltage transients comprising: voltage regulation means coupled to the system controller and responsive to the line voltage for providing a regulated DC voltage to the system controller; voltage level sensing means coupled across said voltage regulation means for detecting a decrease in the line voltage below a predetermined threshold level and for outputting a control signal in response thereto, said voltage level sensing means including a voltage divider network coupled across said voltage regulation means for dividing down the voltage across said voltage regulation means in increasing the ratio of the line voltage decrease to the line voltage; and decoding means coupled to the nonvolatile memory and to said voltage level sensing means and including first and second decoders responsive to said control signal for respectively deselecting and write disabling the nonvolatile memory when the voltage across said voltage regulation means drops below said predetermined threshold level in preventing the alteration of data stored in the nonvolatile memory.
Claim 9
Dependent Claim
221 words
For use in a data processing system energized by a line voltage subject to transients, wherein data is written into a nonvolatile memory for storage therein and is read from the nonvolatile memory under the control of a system controller coupled to the nonvolatile memory, a memory protection circuit for preventing the alteration of data stored in the nonvolatile memory arising from line voltage transients comprising: voltage regulation means coupled to the system controller and responsive to the line voltage for providing a regulated DC voltage to the system controller; voltage level sensing means coupled across said voltage regulation means for detecting a decrease in the line voltage below a predetermined threshold level and for outputting a control signal in response thereto, said voltage level sensing means including a voltage divider network coupled across said voltage regulation means for dividing down the voltage across said voltage regulation means in increasing the ratio of the line voltage decrease to the line voltage; and decoding means coupled to the nonvolatile memory and to said voltage level sensing means and including first and second decoders responsive to said control signal for respectively deselecting and write disabling the nonvolatile memory when the voltage across said voltage regulation means drops below said predetermined threshold level in preventing the alteration of data stored in the nonvolatile memory.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-07 | 1991-03-09 | 1991-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-07 | 1995-03-09 | 1995-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-07 | 1999-03-09 | 1999-09-08 | $7700.00 | Window Closed / Lapsed |