US4692901A
Expired / Lapsed
US
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Semiconductor memory
Assignee: Mitsubishi Electric Corp
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Filing: 1985-08-05
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Granted: 1987-09-08
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Expires: 2005-08-05
Abstract
Abstract A semiconductor memory comprises memory cells (15-18, 27-30), a data writing terminal (1), a data readout terminal (48), transistors (3-10, 35-42), address signal input terminals (23-26), subdecode signal input terminals (43-46), driving signal generating circuits (49-52), parallel readout circuits (79-82) and test mode switching signal input terminal (53, 88). In writing of function test data for the memory cells, the driving signal generating circuits turn all of the transistors (3-10) on in response to a test mode switching signal with no regard to address signals, thereby to simultaneously write data in the memory cells (15-18). Further, in readout of the function test data for the memory cells, the parallel readout circuits read the storage contents of the memory cells (27-30) storing the test data in response to a test mode switching signal with no regard to subdecode signals. Logic circuit means (90, 91, 94) may be provided to output logical value corresponding to the test data stored in the memory cells when all of the logical values of the test data are at the same level.
Inventors
- 👤 Masaki Kumanoya
- 👤 Kazuyasu Fujishima
- 👤 Hideshi Miyatake
- 👤 Hideto Hidaka
- 👤 Katsumi Dosaka
- 👤 Yasumasa Nishimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:36
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C29/00; G11C29/04; G11C29/08; G11C29/12; G11C29/18; G11C29/30; G11C29/34
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
135 words
A semiconductor memory comprising: a data writing terminal; n-bit memory cells coupled in parallel to said data writing terminal, n being an integer not less than 2; designating signal generating means for generating memory cell designating signals for designating any one of said n-bit memory cells to be written with data; memory cell writing means of said number n each provided for respective ones of said n-bit memory cells for receiving said memory cell designating signals respectively from said designating signal generating means thereby to write data in designated memory cells; and driving signal generating means operative during a memory test mode of operation of said memory for generating driving signals for simultaneously driving all of said memory cell writing means of said number n to write memory function test data in said memory cells.
Claim 2
Dependent Claim
135 words
A semiconductor memory comprising: a data writing terminal; n-bit memory cells coupled in parallel to said data writing terminal, n being an integer not less than 2; designating signal generating means for generating memory cell designating signals for designating any one of said n-bit memory cells to be written with data; memory cell writing means of said number n each provided for respective ones of said n-bit memory cells for receiving said memory cell designating signals respectively from said designating signal generating means thereby to write data in designated memory cells; and driving signal generating means operative during a memory test mode of operation of said memory for generating driving signals for simultaneously driving all of said memory cell writing means of said number n to write memory function test data in said memory cells.
Claim 3
Dependent Claim
88 words
A semiconductor memory in accordance with claim 1, wherein said driving signal generating means have switching means switched in response to control signals from an external source of control signals to supply said driving signals to said memory cell writing means of said number n when memory function test data are being written in said memory cells and to supply said memory cell designating signals to said memory cell writing means of said number n when memory function test data are not being written in said memory cells.
Claim 4
Dependent Claim
47 words
A semiconductor memory in accordance with claim 1, wherein said driving signal generating means are provided with timing signal generating means for generating timing signals to which data writing in said data writing terminal in synchronized, while generating said driving signals in response to said timing signals.
Claim 5
Dependent Claim
162 words
A semiconductor memory comprising: n-bit memory cells, n being an integer not less than 2; internal output signal generating means of said number n each provided for respective ones of said n-bit memory cells for reading logical values held in respective said n-bit memory cells to output the same; signal selecting means for selecting one value from said logical values of said number n outputted from respective ones of said internal output signal generating means of said number n; a data reading terminal for externally outputting said one logical value selected by said signal selecting means; test data output means connected to said internal output signal generating means of said number n for outputting data from said internal output signal generating means as memory cell function test data; and test mode switching means responsive to a memory function test mode of operation of the memory for activating said test data output means only in readout of said memory cell function test data.
Claim 6
Dependent Claim
162 words
A semiconductor memory comprising: n-bit memory cells, n being an integer not less than 2; internal output signal generating means of said number n each provided for respective ones of said n-bit memory cells for reading logical values held in respective said n-bit memory cells to output the same; signal selecting means for selecting one value from said logical values of said number n outputted from respective ones of said internal output signal generating means of said number n; a data reading terminal for externally outputting said one logical value selected by said signal selecting means; test data output means connected to said internal output signal generating means of said number n for outputting data from said internal output signal generating means as memory cell function test data; and test mode switching means responsive to a memory function test mode of operation of the memory for activating said test data output means only in readout of said memory cell function test data.
Claim 7
Dependent Claim
50 words
A semiconductor memory in accordance with claim 4, wherein said test data output means are implemented by parallel readout means of said number n for directly outputting said logical values of said number n outputted from said internal output signal generating means of said number n in a parallel manner.
Claim 8
Dependent Claim
239 words
A semiconductor memory in accordance with claim 5, wherein said internal output signal generating means respectively output logical values in complementary relation to said logical values read from said memory cells, respective one of said parallel readout means of said number n comprising: an output terminal, a first signal source for supplying high-level signals, a second signal source for supplying low-level signals, first switching means having a control terminal connected to said internal output signal generating means for receiving said logical value held in said memory cell, a first conducting terminal connected to said output terminal, and second switching means having a control terminal connected to said internal output signal generating means for receiving said logical value in said complementary relation, a first conducting terminal connected to said second signal source and a second conducting terminal connected to said output terminal, and said test mode switching means comprising: third switching means for receiving a control signal from an external source of control signals in said readout of said memory cell function test data thereby to make continuity between said internal output signal generating means and said control terminal of said first swtiching means, and fourth switching means for receiving said control signal from the external source of control signals in said readout of said memory cell function test data thereby to make continuity between said internal output signal generating means and said control terminal of said second switching means.
Claim 9
Dependent Claim
52 words
A semiconductor memory in accordance with claim 4, wherein said test data output means is implemented by logic circuit means which outputs corresponding logical value when all of said logical values of said number n outputted from said internal output signal generating means of said number n are at the same level.
Claim 10
Dependent Claim
188 words
A semiconductor memory in accordance with claim 7, wherein said internal output signal generating means respectively output logical values in complementary relation to said logical values read from said memory cells, said logic circuit means comprising: an output terminal, a third signal source for supplying high-level signals, a fourth signal source for supplying low-level signals, a first AND circuit for outputting the logical product of n-bit logical values held in said n-bit memory cells outputted from said internal output signal generating means of said number n, a second AND circuit for outputting the logical product of n-bit logical values in said complementary relation outputted from said internal output signal generating means of said number n, fifth switching means having a control terminal connected to the output of said first AND circuit, a first conducting terminal connected to said third signal source and a second conducting terminal connected to said output terminal, and sixth switching means having a control terminal connected to the output of said second AND circuit, a first conducting terminal connected to said fourth signal source and a second conducting terminal connected to said output terminal.
Claim 11
Dependent Claim
93 words
A semiconductor memory in accordance with claim 8, wherein said driving signal generating means have seventh switching means switched in response to a control signal from an external source of control signals to supply said driving signals to said memory cell writing means of said number n said memory cell function test data are being written in said memory cells and to supply said memory cell designating signals to said memory cell writing means of said number n when said memory cell function test data are not being written into said memory cells.
Claim 12
Dependent Claim
23 words
A semiconductor memory in accordance with claim 7, wherein the output of said logic circuit means is generated through said data reading terminal.
Claim 13
Dependent Claim
132 words
A semiconductor memory in accordance with claim 4, further comprising: a data writing terminal connected to said n-bit memory cells, designating signal generating means for generating memory cell designating signals for designating any one of said n-bit memory cells to be written with data, memory cell writing means of said number n each provided for respective ones of said n-bit memory cells for receiving said mcmory cell designating signals respectively from said designating signal generating means thereby to write said data in said designated memory cells, and driving signal generating means operative during a memory test mode of operation of said memory for generating driving signals for simultaneously driving all of said memory cell writing means of said number n to write said memory cell function test data in said memory cells.
Claim 14
Dependent Claim
48 words
A semiconductor memory in accordance with claim 11, wherein said driving signal generating means are further provided with timing signal generating means for generating timing signals to which data writing in said data writing terminal is synchronized while generating said driving signals in response to said timing signals.
References Cited (Backward Citations)
US4061908A
Cited
JPS5963083A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-07 | 1991-03-09 | 1991-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-07 | 1995-03-09 | 1995-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-07 | 1999-03-09 | 1999-09-08 | $7700.00 | Window Closed / Lapsed |