US4686001A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming contact layer on semiconductor light emitting device
Assignee: Fujitsu Ltd
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Filing: 1985-12-23
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Granted: 1987-08-11
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Expires: 2005-12-23
Abstract
Abstract A method for producing a semiconductor light emitting device wherein a contact layer of InGaAsP is formed on a semiconductor layer, including forming the InGaAsP contact layer on the semiconductor layer; subsequently, forming an InP cover layer on the contact layer; cleaning the surface of the InP cover layer by a solution which selectively melts indium; and removing the InP cover layer by a selective etching process.
Inventors
- 👤 Niro Okazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:47
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; H10H20/81; H10H20/822; H10H20/824
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
101 words
A method for producing a semiconductor light emitting device wherein a contact layer of indium gallium arsenic phosphorus (InGaAsP) is formed on a semiconductor layer, comprising the steps of: forming an InGaAsP contact layer on a semiconductor layer; subsequently, forming an InP cover layer on said InGaAsP contact layer; removing surface In from the InP cover layer by cleaning the surface of said InP cover layer with a solution which selectively melts indium but not InP; and removing said InP cover layer from said InGaAsP contact layer by a selective etching process using an etchant which dissolves InP but not InGaAsP.
Claim 2
Independent Claim
101 words
A method for producing a semiconductor light emitting device wherein a contact layer of indium gallium arsenic phosphorus (InGaAsP) is formed on a semiconductor layer, comprising the steps of: forming an InGaAsP contact layer on a semiconductor layer; subsequently, forming an InP cover layer on said InGaAsP contact layer; removing surface In from the InP cover layer by cleaning the surface of said InP cover layer with a solution which selectively melts indium but not InP; and removing said InP cover layer from said InGaAsP contact layer by a selective etching process using an etchant which dissolves InP but not InGaAsP.
Claim 3
Dependent Claim
30 words
A method for producing a semiconductor light emitting device according to claim 1, wherein said solution which selectively melts indium is a mixed solution of HF and HNO 3 .
Claim 4
Dependent Claim
26 words
A method for producing a semiconductor light emitting device according to claim 1, wherein the etchant used in said selective etching process is HCl or HBr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-08-10 | 1991-02-09 | 1991-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-08-10 | 1995-02-09 | 1995-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-08-10 | 1999-02-09 | 1999-08-11 | $7700.00 | Window Closed / Lapsed |