Method for the manufacture of at least one thin film field effect transistor

Claim 1

A method for the manufacture of at least one thin film field effect transistor of the type having self-alignment of the electrodes, the transistor being obtained from successive deposits on a first face of a transparent, insulating substrate, wherein the method comprises the following stages: first stage: deposits on the first face of the substrate of a first metal coating and a coating of a first material, second stage: formation of a mesa of said first material, third stage: deposition of a coating of a second material of given thickness, fourth stage: etching said second material so as to only leave a first shoulder of the second material on the side or edge of the mesa, fifth stage: etching the mesa until it has been completely eliminated, sixth stage: etching the first metal coating so as to only leave a second metal shoulder protected by the first shoulder, seventh stage: etching the first shoulder until it has been completely eliminated, eighth stage: successive deposits of a transparent grid insulant coating and a thin coating of a transparent semiconductor material, ninth stage: deposit of a photosensitive resin coating, irradiation of the resin from the second face of the substrate and elimination of the irradiated part of the resin, tenth stage: formation of source and drain ohmic regions, eleventh stage: deposit of a second metal coating and removal of resin and second metal coating on the resin, twelfth stage: delimitation of the gate, source and drain electrodes.

Claim 2

A method for the manufacture of at least one thin film field effect transistor of the type having self-alignment of the electrodes, the transistor being obtained from successive deposits on a first face of a transparent, insulating substrate, wherein the method comprises the following stages: first stage: deposits on the first face of the substrate of a first metal coating and a coating of a first material, second stage: formation of a mesa of said first material, third stage: deposition of a coating of a second material of given thickness, fourth stage: etching said second material so as to only leave a first shoulder of the second material on the side or edge of the mesa, fifth stage: etching the mesa until it has been completely eliminated, sixth stage: etching the first metal coating so as to only leave a second metal shoulder protected by the first shoulder, seventh stage: etching the first shoulder until it has been completely eliminated, eighth stage: successive deposits of a transparent grid insulant coating and a thin coating of a transparent semiconductor material, ninth stage: deposit of a photosensitive resin coating, irradiation of the resin from the second face of the substrate and elimination of the irradiated part of the resin, tenth stage: formation of source and drain ohmic regions, eleventh stage: deposit of a second metal coating and removal of resin and second metal coating on the resin, twelfth stage: delimitation of the gate, source and drain electrodes.