US4683186A
Expired / Lapsed
US
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Doped amorphous silicon photoconductive device having a protective coating
Assignee: Sharp Corp
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Filing: 1985-10-10
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Granted: 1987-07-28
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Expires: 2005-10-10
Abstract
Abstract A photoconductive device including a conductive substrate, a photoconductive layer of amorphous silicon containing at least hydrogen and a surface protection layer applied on the photoconductive layer a dopant is added in the photoconductive layer at least near the interface with the surface protection layer, and the concentration of the dopant increases in the direction perpendicular to the interface. The surface protection layer has an optical energy gap larger than that of the photoconductive layer. A further photoconductive device comprising a conductive substrate; a photoconductive layer of amorphous silicon applied on the conductive substrate and a surface protection layer of amorphous silicon applied on said photoconductive layer wherein the surface protection layer contains oxygen, and is doped with a IIIb element.
Inventors
- 👤 Kunio Ohashi
- 👤 Tadashi Tonegawa
- 👤 Shoichi Nagata
- 👤 Masatsugu Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:40
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235; G03G5/08242; G03G5/08221; G03G5/08228; H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H10F71/00; H10F71/10; H10F71/103; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
91 words
A photoconductive device comprising: a conductive substrate; a photoconductive layer made of amorphous Si:H; and a surface protection layer applied on said photoconductive layer which wll not deteriorate the photosensitivity or charge acceptance of said photoconductive layer; wherein a dopant is added to said photoconductive layer at least near an interface between said surface protection layer and said photoconductive layer, the concentration of said dopant increasing in a direction perpendicular to and toward said interface, said surface protection layer having an optical energy gap larger than that of said photoconductive layer.
Claim 2
Dependent Claim
91 words
A photoconductive device comprising: a conductive substrate; a photoconductive layer made of amorphous Si:H; and a surface protection layer applied on said photoconductive layer which wll not deteriorate the photosensitivity or charge acceptance of said photoconductive layer; wherein a dopant is added to said photoconductive layer at least near an interface between said surface protection layer and said photoconductive layer, the concentration of said dopant increasing in a direction perpendicular to and toward said interface, said surface protection layer having an optical energy gap larger than that of said photoconductive layer.
Claim 3
Dependent Claim
30 words
A photoconductive device according to claim 1, wherein said concentration of dopant in the photoconductive layer increases linearly in the direction perpendicular to said interface with the surface protection layer.
Claim 4
Dependent Claim
32 words
A photoconductive device according to claim 1, wherein said concentration of dopant in the photoconductive layer increases with a curvature in the direction perpendicular to said interface with the surface protection layer.
Claim 5
Dependent Claim
40 words
A photoconductive device according to claim 1, wherein said surface protection layer is composed of amorphous silicon containing oxygen, and the concentration of oxygen in the surface protection layer is larger than concentration of the oxygen in the photoconductive layer.
Claim 6
Dependent Claim
14 words
A photoconductive device according to claim 4, wherein said dopant is a IIIb element.
Claim 7
Dependent Claim
13 words
A photoconductive device according to claim 5, wherein said IIIb element is boron.
Claim 8
Dependent Claim
30 words
A photoconductive device according to claim 5, further including a layer composed of amorphous silicon containing at least oxygen, nitrogen or carbon between said conductive substrate and said photoconductive layer.
Claim 9
Dependent Claim
14 words
A photoconductive device according to claim 4, wherein said dopant is a Vb element.
Claim 10
Dependent Claim
13 words
A photoconductive device according to claim 8, wherein said Vb element is phosphorous.
Claim 11
Dependent Claim
30 words
A photoconductive device according to claim 8, further including a layer composed of amorphous silicon containing at least oxygen, nitrogen or carbon between said conductive substrate and said photoconductive layer.
Claim 12
Dependent Claim
42 words
A photoconductive material according to claim 1, wherein said surface protection layer is composed of amorphous silicon containing nitrogen, and the concentration of the nitrogen in the surface protection layer is larger than the concentration of the nitrogen in the photoconductive layer.
Claim 13
Dependent Claim
14 words
A photoconductive device according to claim 11, wherein said dopant is a IIIb element.
Claim 14
Dependent Claim
13 words
A photoconductive device according to claim 12, wherein said IIIb element is boron.
Claim 15
Dependent Claim
30 words
A photoconductive device accordrng to claim 12 further including a layer composed of amorphous silicon containing at least oxygen, nitrogen or carbon between said conductive substrate and said photoconductive layer.
Claim 16
Dependent Claim
14 words
A photoconductive device according to claim 11, wherein said dopant is a Vb element.
Claim 17
Dependent Claim
13 words
A photoconductive device according to claim 15, wherein said Vb element is phosphorous.
Claim 18
Dependent Claim
30 words
A photoconductive device acoording to claim 15, further including a layer composed of amorphous silicon containing at least oxygen, nitrogen or carbon between said conductive substrate and said photoconductive layer.
Claim 19
Dependent Claim
42 words
A photoconductive device according to claim 1, wherein said surface protection layer is composed of amorphous silicon containing carbon, and the concentration of the carbon in the surface protection layer is larger than the concentration of the carbon in the photoconductive layer.
Claim 20
Dependent Claim
14 words
A photoconductive device according to claim 18, wherein said dopant is a IIIb element.
Claim 21
Dependent Claim
13 words
A photoconductive material according to claim 19, wherein said IIIb element is boron.
Claim 22
Dependent Claim
30 words
A photoconductive device according to claim 19, further including a layer composed of amorphous silicon containing at least oxygen, nitrogen or carbon between said conductive substrate and said photoconductive layer.
Claim 23
Dependent Claim
14 words
A photoconductive device according to claim 18, wherein said dopant is a Vb element.
Claim 24
Dependent Claim
13 words
A photoconductive device according to claim 22, wherein said Vb element is phosphorous.
Claim 25
Dependent Claim
30 words
A photoconductive device according to claim 22, further including a layer composed of amorphous silicon containing at least oxygen, nitrogen or carbon between said conductive substrate and said photoconductive layer.
Claim 26
Dependent Claim
45 words
A photoconductive device comprising: a conductive substrate; a photoconductive layer of amorphous Si:H applied on said conductive substrate; and a surface protection layer of amorphous silicon applied on said photoconductive layer; wherein said surface protection layer contains oxygen, and is doped with a IIIb element.
Claim 27
Dependent Claim
45 words
A photoconductive device comprising: a conductive substrate; a photoconductive layer of amorphous Si:H applied on said conductive substrate; and a surface protection layer of amorphous silicon applied on said photoconductive layer; wherein said surface protection layer contains oxygen, and is doped with a IIIb element.
Claim 28
Dependent Claim
13 words
A photoconductive device according to claim 25, wherein said IIIb element is boron.
Claim 29
Dependent Claim
24 words
A photoconductive device according to claim 26, wherein the atomatic % ratio of boron to silicon is between 10 -3 and 10 -1 .
Claim 30
Dependent Claim
20 words
A photoconductive device according to claim 25, wherein thickness of said surface protection layer is between 0.01 and 4.0 μm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-07-27 | 1991-01-26 | 1991-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-07-27 | 1995-01-26 | 1995-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-07-27 | 1999-01-26 | 1999-07-28 | $7700.00 | Window Closed / Lapsed |